Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene von Kim, Kyounghwan, DaSilva, Ashley, Huang, Shengqiang, Fallahazad, Babak, Larentis, Stefano, Taniguchi, Takashi, Watanabe, Kenji, 渡邊賢司, LeRoy, Brian J., MacDonald, Allan H., Tutuc, Emanuel

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Topologically Protected Helical States in Minimally Twisted Bilayer Graphene von Huang, Shengqiang, Kim, Kyounghwan, Efimkin, Dmitry K, Lovorn, Timothy, Taniguchi, Takashi, Watanabe, Kenji, MacDonald, Allan H, Tutuc, Emanuel, LeRoy, Brian J

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High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors von Movva, Hema C. P, Rai, Amritesh, Kang, Sangwoo, Kim, Kyounghwan, Fallahazad, Babak, Taniguchi, Takashi, Watanabe, Kenji, Tutuc, Emanuel, Banerjee, Sanjay K

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Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy von Roy, Anupam, Movva, Hema C. P, Satpati, Biswarup, Kim, Kyounghwan, Dey, Rik, Rai, Amritesh, Pramanik, Tanmoy, Guchhait, Samaresh, Tutuc, Emanuel, Banerjee, Sanjay K

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Chemical potential and quantum Hall ferromagnetism in bilayer graphene von Lee, Kayoung, Fallahazad, Babak, Xue, Jiamin, Dillen, David C., Kim, Kyounghwan, Taniguchi, Takashi, Watanabe, Kenji, Tutuc, Emanuel

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Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits von Larentis, Stefano, Fallahazad, Babak, Movva, Hema C. P., Kim, Kyounghwan, Rai, Amritesh, Taniguchi, Takashi, Watanabe, Kenji, Banerjee, Sanjay K., Tutuc, Emanuel

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Band Alignment in WSe2–Graphene Heterostructures von Kim, Kyounghwan, Larentis, Stefano, Fallahazad, Babak, Lee, Kayoung, Xue, Jiamin, Dillen, David C, Corbet, Chris M, Tutuc, Emanuel

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Band Offset and Negative Compressibility in Graphene-MoS2 Heterostructures von Larentis, Stefano, Tolsma, John R, Fallahazad, Babak, Dillen, David C, Kim, Kyounghwan, MacDonald, Allan H, Tutuc, Emanuel

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Measurement of carrier lifetime in micron-scaled materials using resonant microwave circuits von Dev, Sukrith, Wang, Yinan, Kim, Kyounghwan, Zamiri, Marziyeh, Kadlec, Clark, Goldflam, Michael, Hawkins, Samuel, Shaner, Eric, Kim, Jin, Krishna, Sanjay, Allen, Monica, Allen, Jeffery, Tutuc, Emanuel, Wasserman, Daniel

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Frequency- and bandwidth-controllable electromagnetic absorber using 3D-printed shape memory meta-wires von Kim, Kyounghwan, Kim, Yelim, Park, Eiyong, Jeong, Heijun, Lim, Sungjoon

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4D-printed intelligent reflecting surface with improved beam resolution via both phase modulation and space modulation von Kim, Kyounghwan, Phon, Ratanak, Park, Eiyong, Lim, Sungjoon

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Nomogram for predicting in-hospital mortality in trauma patients undergoing resuscitative endovascular balloon occlusion of the aorta: a retrospective multicenter study von Yu, Byungchul, Cho, Jayun, Kang, Byung Hee, Kim, Kyounghwan, Kim, Dong Hun, Chang, Sung Wook, Jung, Pil Young, Heo, Yoonjung, Kang, Wu Seong

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Contemporary Utilization and Outcomes of Resuscitative Endovascular Balloon Occlusion of the Aorta for Traumatic Noncompressible Torso Hemorrhage in Korea: A Retrospective Multi-Ce... von Heo, Yoonjung, Chang, Sung Wook, Yu, Byungchul, Kang, Byung Hee, Jung, Pil Young, Kim, Kyounghwan, Kim, Dong Hun

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Shell morphology and Raman spectra of epitaxial Ge−SixGe1−x and Si−SixGe1−x core-shell nanowires von Wen, Feng, Dillen, David C., Kim, Kyounghwan, Tutuc, Emanuel

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Highly valley-polarized singlet and triplet interlayer excitons in van der Waals heterostructure von Zhang, Long, Gogna, Rahul, Burg, G. William, Horng, Jason, Paik, Eunice, Chou, Yu-Hsun, Kim, Kyounghwan, Tutuc, Emanuel, Deng, Hui

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Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET von Sangwoo Kang, Fallahazad, Babak, Kayoung Lee, Movva, Hema, Kyounghwan Kim, Corbet, Chris M., Taniguchi, Takashi, Watanabe, Kenji, Colombo, Luigi, Register, Leonard F., Tutuc, Emanuel, Banerjee, Sanjay K.

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Intrinsic Disorder in Graphene on Transition Metal Dichalcogenide Heterostructures von Yankowitz, Matthew, Larentis, Stefano, Kim, Kyounghwan, Xue, Jiamin, McKenzie, Devin, Huang, Shengqiang, Paggen, Marina, Ali, Mazhar N, Cava, Robert J, Tutuc, Emanuel, LeRoy, Brian J

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Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors von Kang, Sangwoo, Prasad, Nitin, Movva, Hema C. P, Rai, Amritesh, Kim, Kyounghwan, Mou, Xuehao, Taniguchi, Takashi, Watanabe, Kenji, Register, Leonard F, Tutuc, Emanuel, Banerjee, Sanjay K

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Second-order Delta-sigma Modulator based on Differential Difference Amplifier without Input Buffer von Jin, Byeongkwan, Yoo, Mookyoung, Kang, Sanggyun, Son, Hyeoktae, Kim, Kyounghwan, Wi, Jihyang, Nam, Gibae, Ko, Hyoungho

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Intra-domain periodic defects in monolayer MoS2 von Roy, Anupam, Ghosh, Rudresh, Rai, Amritesh, Sanne, Atresh, Kim, Kyounghwan, Movva, Hema C. P., Dey, Rik, Pramanik, Tanmoy, Chowdhury, Sayema, Tutuc, Emanuel, Banerjee, Sanjay K.

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