531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates von Enya, Yohei, Yoshizumi, Yusuke, Kyono, Takashi, Akita, Katsushi, Ueno, Masaki, Adachi, Masahiro, Sumitomo, Takamichi, Tokuyama, Shinji, Ikegami, Takatoshi, Katayama, Koji, Nakamura, Takao

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Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates von Yoshizumi, Yusuke, Adachi, Masahiro, Enya, Yohei, Kyono, Takashi, Tokuyama, Shinji, Sumitomo, Takamichi, Akita, Katsushi, Ikegami, Takatoshi, Ueno, Masaki, Katayama, Koji, Nakamura, Takao

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Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates von Akita, Katsushi, Kyono, Takashi, Yoshizumi, Yusuke, Kitabayashi, Hiroyuki, Katayama, Koji

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Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20\bar21} GaN Substrates von Kyono, Takashi, Yoshizumi, Yusuke, Enya, Yohei, Adachi, Masahiro, Tokuyama, Shinji, Ueno, Masaki, Katayama, Koji, Nakamura, Takao

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Structural and electrical properties of InAs/GaSb superlattices grown by metalorganic vapor phase epitaxy for midwavelength infrared detectors von Arikata, Suguru, Kyono, Takashi, Miura, Kouhei, Balasekaran, Sundararajan, Inada, Hiroshi, Iguchi, Yasuhiro, Sakai, Michito, Katayama, Haruyoshi, Kimata, Masafumi, Akita, Katsushi

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Thermoelectric properties of Fe2TiAl Heusler alloys von SUZUKI, Ryosuke O, KYONO, Takashi

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Optical Gain Spectroscopy of a Semipolar {20\bar21}-Oriented Green InGaN Laser Diode von Kim, Yoon Seok, Kaneta, Akio, Funato, Mitsuru, Kawakami, Yoichi, Kyono, Takashi, Ueno, Masaki, Nakamura, Takao

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Effects of In composition on ultraviolet emission efficiency in quaternary InAlGaN light-emitting diodes on freestanding GaN substrates and sapphire substrates von Kyono, Takashi, Hirayama, Hideki, Akita, Katsushi, Nakamura, Takao, Ishibashi, Koji

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Influence of residual oxygen impurity in quaternary InAlGaN multiple-quantum-well active layers on emission efficiency of ultraviolet light-emitting diodes on GaN substrates von Kyono, Takashi, Hirayama, Hideki, Akita, Katsushi, Nakamura, Takao, Adachi, Masahiro, Ando, Koshi

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Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a $\{20\bar{2}1\}$ GaN Substrate Probed by Scanning Near-Field Optical Microscopy von Kaneta, Akio, Kim, Yoon-Seok, Funato, Mitsuru, Kawakami, Yoichi, Enya, Yohei, Kyono, Takashi, Ueno, Masaki, Nakamura, Takao

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High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates von Hirayama, Hideki, Akita, Katsushi, Kyono, Takashi, Nakamura, Takao, Ishibashi, Koji

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High-efficiency UV LEDs using quaternary InAlGaN von Hirayama, Hideki, Kyono, Takashi, Akita, Katsushi, Nakamura, Takao, Ishibashi, Koji

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Milliwatt Power 350 nm-band Quaternary InAlGaN UV-LEDs on GaN Substrates von Hirayama, Hideki, Akita, Katsushi, Kyono, Takashi, Nakamura, Takao

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Conversion of unused heat energy to electricity by means of thermoelectric generation in condenser von Kyono, T., Suzuki, R.O., Ono, K.

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Characteristics of InGaN light-emitting diodes on GaN substrates with low threading dislocation densities von Akita, Katsushi, Kyono, Takashi, Yoshizumi, Yusuke, Kitabayashi, Hiroyuki, Katayama, Koji

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Improvements of external quantum efficiency of InGaN-based bluelight-emitting diodes at high current density using GaN substrates von Akita, Katsushi, Kyono, Takashi, Yoshizumi, Yusuke, Kitabayashi, Hiroyuki, Katayama, Koji

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Optical Gain Spectroscopy of a Semipolar $\{20\bar{2}1\}$-Oriented Green InGaN Laser Diode von Kim, Yoon Seok, Kaneta, Akio, Funato, Mitsuru, Kawakami, Yoichi, Kyono, Takashi, Ueno, Masaki, Nakamura, Takao

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Thermoelectric properties of Fe 2TiAl Heusler alloys von Suzuki, Ryosuke O., Kyono, Takashi

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Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar $\{20\bar{2}1\}$ GaN Substrates von Kyono, Takashi, Yoshizumi, Yusuke, Enya, Yohei, Adachi, Masahiro, Tokuyama, Shinji, Ueno, Masaki, Katayama, Koji, Nakamura, Takao

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InGaN-based true green laser diodes on novel semi-polar { 2 0 2 ¯ 1 } GaN substrates von Ueno, Masaki, Yoshizumi, Yusuke, Enya, Yohei, Kyono, Takashi, Adachi, Masahiro, Takagi, Shinpei, Tokuyama, Shinji, Sumitomo, Takamichi, Sumiyoshi, Kazuhide, Saga, Nobuhiro, Ikegami, Takatoshi, Katayama, Koji, Nakamura, Takao

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