Surface orientation and stacking fault generation in strained epitaxial growth von KVAM, E. P, HULL, R

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Characterization of two-phase B2–HCP alloys in the Ru–Al–Cr system von Acosta, M., Reynolds, T.D., Johnson, D.R., Kvam, E.P.

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Electrochemical capacitance voltage profiling of the narrow band gap semiconductor InAs von GOPAL, V, CHEN, E.-H, KVAM, E. P, WOODALL, J. M

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Evidence for misfit dislocation-related carrier accumulation at the InAs/GaP heterointerface von Gopal, V., Kvam, E. P., Chin, T. P., Woodall, J. M.

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Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP von Gopal, V., Souw, Victor, Chen, E.-H., Kvam, E. P., McElfresh, M., Woodall, J. M.

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Critical current density and microstructure of melt-processed YBa2Cu3Ox with PtO2 additions von VARANASI, C, MCGINN, P. J, PAVATE, V, KVAM, E. P

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Dislocation nucleation near the critical thickness in GeSi/Si strained layers von Eaglesham, D. J., Kvam, E. P., Maher, D. M., Humphreys, C. J., Bean, J. C.

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Modeling and microstructure analysis of fatigue initiation life extension by reductions in microporosity von ELSNER, J. H, KVAM, E. P, GRANDT, A. F

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Structural Defects and Critical Electric Field in 3C-SiC von Kim, Byeung C., Kvam, E.P., Tsoi, S., Ramdas, A.K., Smith, A.R., Cooper, James A., Capano, Michael A.

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Control of epitaxial growth orientation in YBa2Cu3O7−δ films on vicinal (110) SrTiO3 substrates von Linehan, D. S., Kvam, E. P., Hou, L., McElfresh, M. W.

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Crystalline linkage and defect structures in bulk zone melt textured YBa2Cu3O7 observed by transmission electron microscopy von ZANOTA, A, KVAM, E. P, BALKIN, D, MCGINN, P. J

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Reduced dislocation density in Ge/Si epilayers von KVAM, E. P, NAMAVAR, F

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Cross-section transmission electron microscopy study of carbon-implanted layers in silicon von WONG, H, LOU, J, CHEUNG, N. W, KVAM, E. P, YU, K. M, OLSON, D. A, WASHBURN, J

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Pinning potential of stacking fault-related dislocations in YBa2Cu3O7 von KVAM, E. P

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Dislocation-induced flux pinning interactions in YBa2Cu3O7 von KVAM, E. P

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Microstructural examination of extended crystal defects in silicon selective epitaxial growth von YEN, H, KVAM, E. P, BASHIR, R, NEUDECK, G. W

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Possible dislocation multiplication source in (001) semiconductor epitaxy von WASHUBURN, J, KVAM, E. P

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The fabrication and thermomechanical processing of Ag/Bi-2223 jelly-roll wires von Dawley, J T, Dorris, S E, Lanagan, M T, Kvam, E P, Poeppei, R B

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Effects of platinum and oxygenation on microstructure in YBa2Cu3O7-δ/Y2BaCuO5 bulk materials von PAVATE, V, WILLIAMS, L. B, KVAM, E. P, VARANASI, C, MCGINN, P. J

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New source of dislocations in GexSi1-x/Si(100) strained epitaxial layers von EAGLESHAM, D. J, MAHER, D. M, KVAM, E. P, BEAN, J. C, HUMPHREYS, C. J

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