Mesoscale blood cell sedimentation for processing millilitre sample volumes von Galligan, C, Nichols, J, Kvam, E, Spooner, P, Gettings, R, Zhu, L, Puleo, C M

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Surface orientation and stacking fault generation in strained epitaxial growth von KVAM, E. P, HULL, R

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Electrochemical capacitance voltage profiling of the narrow band gap semiconductor InAs von GOPAL, V, CHEN, E.-H, KVAM, E. P, WOODALL, J. M

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Evidence for misfit dislocation-related carrier accumulation at the InAs/GaP heterointerface von Gopal, V., Kvam, E. P., Chin, T. P., Woodall, J. M.

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Modeling and microstructure analysis of fatigue initiation life extension by reductions in microporosity von ELSNER, J. H, KVAM, E. P, GRANDT, A. F

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Pinning potential of stacking fault-related dislocations in YBa2Cu3O7 von KVAM, E. P

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Dislocation-induced flux pinning interactions in YBa2Cu3O7 von KVAM, E. P

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Microstructural examination of extended crystal defects in silicon selective epitaxial growth von YEN, H, KVAM, E. P, BASHIR, R, NEUDECK, G. W

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The fabrication and thermomechanical processing of Ag/Bi-2223 jelly-roll wires von Dawley, J T, Dorris, S E, Lanagan, M T, Kvam, E P, Poeppei, R B

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Characterization of two-phase B2–HCP alloys in the Ru–Al–Cr system von Acosta, M., Reynolds, T.D., Johnson, D.R., Kvam, E.P.

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Process improvements in the selective epitaxial growth of Si1-xGex/Si strained layers in a conventional hot-wall LPCVD system von LEE, I.-M, TAKOUDIS, C. G, WANG, W.-C, DENTON, J. P, NEUDECK, G. W, KOH, M. T. K, KVAM, E. P

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Effect of Sb pre-deposition on the compositional profiles in MOVPE-grown InAsSb/InAs(1 1 1) multi-quantum wells von Pillai, M.R, Theiring, Scott C, Barnett, S.A, Wessels, Bruce W, Desikan, Arvind, P. Kvam, Eric

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Mesoscale blood cell sedimentation for processing millilitre sample volumesElectronic supplementary information (ESI) available: S1 - addendum to experimental methods, S2 - investi... von Galligan, C, Nichols, J, Kvam, E, Spooner, P, Gettings, R, Zhu, L, Puleo, C. M

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Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP von Gopal, V., Souw, Victor, Chen, E.-H., Kvam, E. P., McElfresh, M., Woodall, J. M.

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Critical current density and microstructure of melt-processed YBa2Cu3Ox with PtO2 additions von VARANASI, C, MCGINN, P. J, PAVATE, V, KVAM, E. P

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Interactions of dislocations and antiphase (inversion) domain boundaries in III-V/IV heteroepitaxy von KVAM, E. P

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Dislocation nucleation near the critical thickness in GeSi/Si strained layers von Eaglesham, D. J., Kvam, E. P., Maher, D. M., Humphreys, C. J., Bean, J. C.

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Control of epitaxial growth orientation in YBa2Cu3O7−δ films on vicinal (110) SrTiO3 substrates von Linehan, D. S., Kvam, E. P., Hou, L., McElfresh, M. W.

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Crystalline linkage and defect structures in bulk zone melt textured YBa2Cu3O7 observed by transmission electron microscopy von ZANOTA, A, KVAM, E. P, BALKIN, D, MCGINN, P. J

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Reduced dislocation density in Ge/Si epilayers von KVAM, E. P, NAMAVAR, F

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