GaInN-Based Tunnel Junctions in n--p--n Light Emitting Diodes von Kaga, Mitsuru, Morita, Takatoshi, Kuwano, Yuka, Yamashita, Kouji, Yagi, Kouta, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions von Kuwano, Yuka, Kaga, Mitsuru, Morita, Takatoshi, Yamashita, Kouji, Yagi, Kouta, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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Over 1000 channel nitride-based micro-light-emitting diode arrays with tunnel junctions von Watanabe, Masahiro, Nakajima, Keisuke, Kaga, Mitsuru, Kuwano, Yuka, Minamikawa, Daichi, Suzuki, Tomoyuki, Yamashita, Kouji, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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10 um square micro LED and 100 channel array with tunnel junctions von Watanabe, Masahiro, Kaga, Mitsuru, Yamashita, Koji, Suzuki, Tomoyuki, Minamikawa, Daichi, Kuwano, Yuka, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu

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GaInN tunnel junctions with high InN mole fraction von Minamikawa, Daichi, Kuwano, Yuka, Kawai, Shunsuke, Morita, Takatoshi, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, satoshi, Akasaki, Isamu

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Highly efficient LEDs on nitride-based tunnel junction von Morita, Takatoshi, Ino, Masataka, Kuwano, Yuka, Watanabe, Masahiro, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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Current confinement structures with buried nitride-based tunnel junctions von Kuwano, Yuka, Horikawa, kousuke, Morita, Takatoshi, Ino, Masataka, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu

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Memory system and method of controlling nonvolatile memory von Amaki, Takehiko, Hida, Toshikatsu, Asami, Shohei, Kuwano, Yuka

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MEMORY SYSTEM AND METHOD OF CONTROLLING NONVOLATILE MEMORY von AMAKI, Takehiko, ASAMI, Shohei, KUWANO, Yuka, HIDA, Toshikatsu

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DISK STORAGE APPARATUS AND ACCESS CONTROLLING METHOD von Kuwano Yuka, Kuji Takato, Masuyama Hidekazu, Inoue Kenji, Aida Kimiyasu

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Method of manufacturing n-p-n nitride-semiconductor light-emitting device, and n-p-n nitride-semiconductor light-emitting device von Kuwano Yuka, Iwaya Motoaki, Akasaki Isamu, Takeuchi Tetsuya

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METHOD OF MANUFACTURING N-P-N NITRIDE-SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND N-P-N NITRIDE-SEMICONDUCTOR LIGHT-EMITTING DEVICE von AKASAKI Isamu, TAKEUCHI Tetsuya, KUWANO Yuka, IWAYA Motoaki

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SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD OF THE SAME von AKASAKI ISAMU, TAKEUCHI TETSUYA, KUWANO YUKA, IWATANI MOTOAKI

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DISK APPARATUS AND CONTROL METHOD von KAKUYA TAKUMI, OHTA KATSUSHI, FUJITA ISAO, TASHIRO MASAMI, YAMAMOTO MICHIO, KUWANO YUKA, KUJI TAKATO, TODA SEIJI

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MEMORY SYSTEM AND METHOD FOR CONTROLLING NONVOLATILE MEMORY von AMAGI TAKEHIKO, HIDA TOSHIKATSU, ASAMI SHOHEI, KUWANO YUKA

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TWI639251B von KUWANO, YUKA, TAKEUCHI, TETSUYA, IWAYA, MOTOAKI, AKASAKI, ISAMU

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Method for manufacturing N-P-N nitride-semiconductor light-emitting element, and N-P-N nitride-semiconductor light-emitting element von KUWANO, YUKA, TAKEUCHI, TETSUYA, IWAYA, MOTOAKI, AKASAKI, ISAMU

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METHOD FOR MANUFACTURING n-p-n NITRIDE-SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND n-p-n NITRIDE-SEMICONDUCTOR LIGHT-EMITTING ELEMENT von KUWANO, YUKA, TAKEUCHI, TETSUYA, IWAYA, MOTOAKI, AKASAKI, ISAMU

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Disk apparatus and control method von MASAMI TASHIRO, YUKA KUWANO, TAKATO KUJI, MICHIO YAMAMOTO, TAKUMI KAKUYA, ISAO FUJITA, SEIJI TODA, KATSUSHI OHTA

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高InNモル分率GaInNを用いたトンネル接合 von 南川, 大智, 桑野, 侑香, 河合, 俊介, 森田, 隆敏, 岩谷, 素顕, 竹内, 哲也, 上山, 智, 赤崎, 勇

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