Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing von Zhang, Ziyi, Kushimoto, Maki, Yoshikawa, Akira, Aoto, Koji, Sasaoka, Chiaki, Schowalter, Leo J., Amano, Hiroshi

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A 271.8 nm deep-ultraviolet laser diode for room temperature operation von Zhang, Ziyi, Kushimoto, Maki, Sakai, Tadayoshi, Sugiyama, Naoharu, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi

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Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes von Zhang, Ziyi, Kushimoto, Maki, Horita, Masahiro, Sugiyama, Naoharu, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi

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Impact of unintentionally formed compositionally graded layer on carrier injection efficiency in AlGaN-based deep-ultraviolet laser diodes von Zhang, Ziyi, Yoshikawa, Akira, Kushimoto, Maki, Aoto, Koji, Sasaoka, Chiaki, Amano, Hiroshi

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Study on Degradation of Deep‐Ultraviolet Laser Diode von Zhang, Ziyi, Yoshikawa, Akira, Kushimoto, Maki, Sasaoka, Chiaki, Amano, Hiroshi

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On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR von Sakai, Tadayoshi, Kushimoto, Maki, Zhang, Ziyi, Sugiyama, Naoharu, Schowalter, Leo J., Honda, Yoshio, Sasaoka, Chiaki, Amano, Hiroshi

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Experimental study of gain characteristics in relation to quantum-well width of deep-ultraviolet laser diodes von Zhang, Ziyi, Kushimoto, Maki, Yoshikawa, Akira, Aoto, Koji, Sasaoka, Chiaki, Amano, Hiroshi

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Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping von Kumabe, Takeru, Yoshikawa, Akira, Kawasaki, Seiya, Kushimoto, Maki, Honda, Yoshio, Arai, Manabu, Suda, Jun, Amano, Hiroshi

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Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate von Usami, Shigeyoshi, Ando, Yuto, Tanaka, Atsushi, Nagamatsu, Kentaro, Deki, Manato, Kushimoto, Maki, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi, Sugawara, Yoshihiro, Yao, Yong-Zhao, Ishikawa, Yukari

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Using low-temperature growth to resolve the composition pulling effect of UV-C LEDs von Yoshikawa, Akira, Zhang, Ziyi, Kushimoto, Maki, Aoto, Koji, Sasaoka, Chiaki, Amano, Hiroshi

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Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes von Kushimoto, Maki, Zhang, Ziyi, Yoshikawa, Akira, Aoto, Koji, Honda, Yoshio, Sasaoka, Chiaki, Schowalter, Leo J., Amano, Hiroshi

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Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection von Zhang, Ziyi, Kushimoto, Maki, Yoshikawa, Akira, Aoto, Koji, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi

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Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers von Matsukura, Yusuke, Inazu, Tetsuhiko, Pernot, Cyril, Shibata, Naoki, Kushimoto, Maki, Deki, Manato, Honda, Yoshio, Amano, Hiroshi

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Design and characterization of a low-optical-loss UV-C laser diode von Zhang, Ziyi, Kushimoto, Maki, Sakai, Tadayoshi, Sugiyama, Naoharu, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi

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Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering von Kushimoto, Maki, Sakai, Tadayoshi, Ueoka, Yoshihiro, Tomai, Shigekazu, Katsumata, Satoshi, Deki, Manato, Honda, Yoshio, Amano, Hiroshi

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m‐Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off‐Angle m‐Plane GaN Substrates von Tanaka, Atsushi, Ando, Yuto, Nagamatsu, Kentaro, Deki, Manato, Cheong, Heajeong, Ousmane, Barry, Kushimoto, Maki, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi

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Ammonia decomposition and reaction by high-resolution mass spectrometry for group III – Nitride epitaxial growth von Ye, Zheng, Nitta, Shugo, Nagamatsu, Kentaro, Fujimoto, Naoki, Kushimoto, Maki, Deki, Manato, Tanaka, Atsushi, Honda, Yoshio, Pristovsek, Markus, Amano, Hiroshi

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Sputtered polycrystalline MgZnO/Al reflective electrodes for enhanced light emission in AlGaN-based homojunction tunnel junction DUV-LED von Matsubara, Taichi, Nagata, Kengo, Kushimoto, Maki, Tomai, Shigekazu, Katsumata, Satoshi, Honda, Yoshio, Amano, Hiroshi

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Morphological study of InGaN on GaN substrate by supersaturation von Liu, Zhibin, Nitta, Shugo, Robin, Yoann, Kushimoto, Maki, Deki, Manato, Honda, Yoshio, Pristovsek, Markus, Amano, Hiroshi

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Threshold increase and lasing inhibition due to hexagonal-pyramid-shaped hillocks in AlGaN-based DUV laser diodes on single-crystal AlN substrate von Kushimoto, Maki, Zhang, Ziyi, Honda, Yoshio, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi

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