Imaging techniques for a high-power THz free electron laser von Cherkassky, V.S., Knyazev, B.A., Kubarev, V.V., Kulipanov, G.N., Kuryshev, G.L., Matveenko, A.N., Petrov, A.K., Popik, V.M., Scheglov, M.A., Shevchenko, O.A., Vinokurov, N.A.

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A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy von Zakgeim, A. L., Kuryshev, G. L., Mizerov, M. N., Polovinkin, V. G., Rozhansky, I. V., Chernyakov, A. E.

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Thermal imaging microscopy: Application for diagnostics the microelectronic devices von Kuryshev, G.L.

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Physic-technological principles for fabrication of multielement InSb- and InAs-based MIS IR-photodetectors von Kuryshev, G.L.

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Optoelectronic devices based on InSb and InAs MIS structures. perculiarities of construction, parameters and application von Kuryshev, G.L.

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SIMS study on redistribution of implanted impurities in InSb and InAs during post-implantation annealing von Gerasimenko, N.N., Khryashchev, G.S., Kuryshev, G.L., Myasnikov, A.M., Obodnikov, V.I.

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DEVICE RECORDING THERMAL RADIATION von POLOVINKIN V.G, BAZOVKIN V.M, KURYSHEV G.L

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The electrical properties of planar n +−p junctions in InAs produced by S + ion implantation von Gerasimenko, N.N., Kuryshev, G.L., Myasnikov, A.M., Obodnikov, V.I., Safronov, L.N., Khryashchev, G.S.

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MULTICOMPONENT PHOTODETECTOR WITH LONG-WAVE ABSORPTION EDGE von KOVCHAVTSEV A.P, RJAZANTSEV I.A, KURYSHEV G.L, DVURECHENSKIJ A.V

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MATRIX THERMAL IMAGING UNIT von KOVCHAVTSEV A.P, VALISHEVA N.A, BAZOVKIN V.M, ZAKHAROV I.M, SUBBOTIN I.M, KURYSHEV G.L, GUZEV A.A, LI I.I, STROGANOV A.S, VAJNER B.G, EFIMOV V.M

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