Reliability issues of GaN based high voltage power devices von Wuerfl, J., Bahat-Treidel, E., Brunner, F., Cho, E., Hilt, O., Ivo, P., Knauer, A., Kurpas, P., Lossy, R., Schulz, M., Singwald, S., Weyers, M., Zhytnytska, R.

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Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors von Chevtchenko, S.A., Schulz, M., Bahat-Treidel, E., John, W., Freyer, S., Kurpas, P., Würfl, J.

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Correlation of InGaP(001) surface structure during growth and bulk ordering von Zorn, M., Kurpas, P., Shkrebtii, A. I., Junno, B., Bhattacharya, A., Knorr, K., Weyers, M., Samuelson, L., Zettler, J. T., Richter, W.

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Multivariate Statistical Analysis of Metal Concentrations in Teeth of Residents of Silesian Region, Southern Poland von Wiechuła, D, Fischer, A, Kwapuliński, J, Loska, K, Fischer, T, Kurpas, P

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Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques von Zettler, J.-T., Haberland, K., Zorn, M., Pristovsek, M., Richter, W., Kurpas, P., Weyers, M.

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Investigation of breakdown and DC behavior in HBTs with (Al,Ga)As collector layer von Maassdorf, A., Kurpas, P., Brunner, F., Weyers, M., Trankle, G.

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Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor von Brunner, F, Bergunde, T, Richter, E, Kurpas, P, Achouche, M, Maaßdorf, A, Würfl, J, Weyers, M

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High performance InGaP/GaAs HBTs for mobile communications von Achouche, M., Spitzbart, T., Kurpas, P., Brunner, F., Würfl, J., Tränkle, G.

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Spectroscopic process sensors in MOVPE device production von HABERLAND, K, KURPAS, P, PRISTOVSEK, M, ZETTLER, J.-T, WEYERS, M, RICHTER, W

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Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE von Brunner, F., Braun, A., Kurpas, P., Schneider, J., Würfl, J., Weyers, M.

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Real-time growth monitoring of InGaAs/InP-HBT structures with reflectance anisotropy spectroscopy von Arens, M., Kurpas, P., Ressel, P., Weyers, M.

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Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE von BRUNNER, F, RICHTER, E, WEYERS, M, BERGUNDE, T, RECHENBERG, I, BHATTACHARYA, A, MAASSDORF, A, TOMM, J. W, KURPAS, P, ACHOUCHE, M, WÜRFL, J

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High-voltage GaAs power-HBTs for base-station amplifiers von Kurpas, P., Brunner, F., Doemer, R., Janke, B., Heymann, P., Maasdorf, A., Doser, W., Auxemery, P., Blanck, H., Pons, D., Wurfl, J., Heinrich, W.

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Critical issues of growth optimization for Ga0.5In0.5P/GaAs heterojunction bipolar transistors von BRUNNER, F, MAASSDORF, A, KURPAS, P, BRAUN, A, BERGUNDE, T, RICHTER, E, WÜRFL, J, WEYERS, M

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Carbon doped GaAs grown in low pressure-metalorganic vapor phase epitaxy using carbon tetrabromide von RICHTER, E, KURPAS, P, GUTSCHE, D, WEYERS, M

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In situ monitoring and control of InGaP growth on GaAs in MOVPE von Zorn, M., Trepk, T., Kurpas, P., Weyers, M., Zettler, J.-T., Richter, W.

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Efficiency of arsenic and phosphorus precursors investigated by reflectance anisotropy spectroscopy von Kurpas, P., Jönsson, J., Richter, W., Gutsche, D., Pristovsek, M., Zorn, M.

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On-line growth monitoring of InP-based device structures by reflectance anisotropy spectroscopy von Kurpas, P., Sato, M., Knauer, A., Weyers, M.

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Growth monitoring by reflectance anisotropy spectroscopy in MOVPE reactors for device fabrication von Kurpas, P., Rumberg, A., Weyers, M., Knorr, K., Bergunde, T., Sato, M., Richter, W.

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Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy von Kurpas, P., Oster, A., Weyers, M., Rumberg, A., Knorr, K., Richter, W.

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