Surface modification of SiO2 thin film using high-dose ion implantation technique as a suitable manufacturing process von Wada, Ryota, Kai, Hiroaki, Sasaki, Junji, Kuroi, Takashi, Ikejiri, Tadashi

Volltext

Strain Evaluation of Laser-Annealed SiGe Thin Layers von Komago, Shota, Murakami, Tatsumi, Yoshioka, Kazutoshi, Yokogawa, Ryo, Borland, John O, Kuroi, Takashi, Tabata, Toshiyuki, Huet, Karim, Horiguchi, Naoto, Ogura, Atsushi

Volltext

[Paper] Investigation of Implantation Damage Recovery using Microwave Annealing for High Performance Image Sensing Devices von Kimura, Masatoshi, Yamaguchi, Tadashi, Kuroi, Takashi

Volltext

The exceptional advantages of channeling implantation into 4H-SiC to make abrupt deep profiles von Wada, Ryota, Nagayama, Tsutomu, Tokoro, Nobuhiro, Kuroi, Takashi, Das, Hrishikesh, Sunkari, Swapna, Justice, Joshua

Volltext

Surface modification of SiO 2 thin film using high-dose ion implantation technique as a suitable manufacturing process von Wada, Ryota, Kai, Hiroaki, Sasaki, Junji, Kuroi, Takashi, Ikejiri, Tadashi

Volltext

Analysis of Hot Carrier Degradation of Lateral Double-Diffused Metal--Oxide--Semiconductor under Gate Pulse Stress von Furuya, Keiichi, Nitta, Tetsuya, Katayama, Toshiharu, Hatasako, Kenichi, Kuroi, Takashi, Maegawa, Shigeto

Volltext

Novel Design of Vertical Double-Diffused Metal–Oxide–Semiconductor Transistor for High Electrostatic Discharge Robustness von Hatasako, Kenichi, Yamamoto, Fumitoshi, Uenishi, Akio, Kuroi, Takashi, Maegawa, Shigeto

Volltext

Strain evaluation in Ge and Sn implanted Si layers with laser and rapid thermal annealing von Komago, Shota, Yokogawa, Ryo, Yoshioka, Kazutoshi, Borland, John O., Kuroi, Takashi, Kawasaki, Yoji, Ogura, Atsushi

Volltext

ESD robustness improvement for integrated DMOS transistors -the different gate-voltage dependence of It2 between VDMOS and LDMOS transistors von Hatasako, Kenichi, Yamamoto, Fumitoshi, Uenishi, Akio, Kuroi, Takashi, Maegawa, Shigeto, Fujiwara, Yasufumi

Volltext

SiC Diode with Vertical Superjunction Realized Using Channeled Implant and Multi-Step Epitaxial Growth von Wada, Ryota, Kuroi, Takashi, Maloušek, Roman, Sunkari, Swapna, Allerstam, Fredrik, Justice, Joshua, Chochol, Jan, Franchi, Jimmy, Domeij, Martin, Das, Hrishikesh, Gumaelius, Krister

Volltext

(Invited) P-Type and N-Type Channeling Ion Implantation of SiC and Implications for Device Design and Fabrication von Das, Hrishikesh, Sunkari, Swapna, Justice, Joshua, Malousek, Roman, Chochol, Jan, Wada, Ryota, Kuroi, Takashi

Volltext

Analysis of Snapback Phenomena in VDMOS Transistor having the High Second Breakdown Current: A High ESD Mechanism Analysis von Hatasako, Kenichi, Yamamoto, Fumitoshi, Uenishi, Akio, Kuroi, Takashi, Maegawa, Shigeto

Volltext

Evolution of Ion Implantation Technology and its Contribution to Semiconductor Industry von Tsukamoto, Katsuhiro, Kuroi, Takashi, Kawasaki, Yoji

Volltext

Boosting Ge-Epi P-Well Mobility & Crystal Quality with Si or Sn Implantation and Melt Annealing von Borland, John O, Chaung, Shang-Shuin, Tseng, Tseung-Yuen, Joshi, Abhijeet, Basol, Bulent, Lee, Yao Jen, Kuroi, Takashi, Tabata, Toshiyuki, Huet, Karim, Goodman, Gary, Khapochkina, Nadya, Buyuklimanli, Temel

Volltext

Saturation Phenomenon of Stress-Induced Gate Leakage Current von Ueno, Shuichi, Kuroi, Takashi, Teramoto, Akinobu, Umeda, Hiroshi, Eimori, Takahisa, Inoue, Yasuo

Volltext

Advanced Retrograde Well Technology for 90-nm-Node Embedded Static Random Access Memory Using High-Energy Parallel Beam von Yamashita, Tomohiro, Kitazawa, Masashi, Kawasaki, Yoji, Takashino, Hiroyuki, Kuroi, Takashi, Inoue, Yasuo, Inuishi, Masahide

Volltext

Investigation of Implantation Damage Recovery using Microwave Annealing for High Performance Image Sensing Devices von KIMURA, Masatoshi, YAMAGUCHI, Tadashi, KUROI, Takashi

Volltext

Proximity gettering of heavy metals by high-energy ion implantation von KUROI, T, KAWASAKI, Y, KOMORI, S, FUKUMOTO, K, INUISHI, M, TSUKAMOTO, K, SHINYASHIKI, H, SHINGYOJI, T

Volltext

Strain Evaluation of Laser or RTA Annealed Sn-doped SiGe Layers von Komago, Shota, Yokogawa, Ryo, Yoshioka, Kazutoshi, Sawamoto, Naomi, Borland, John, Kuroi, Takashi, Kawasaki, Yoji, Ogura, Atsushi

Volltext

Diffusion control of n-type dopants in Ge with high activation using co-implantation and flash lamp annealing von Tanimura, Hideaki, Kawarazaki, Hikaru, Aoyama, Takayuki, Kato, Shinichi, Nozaki, Yoshihide, Wada, Ryota, Higuchi, Takahiro, Nagayama, Tsutomu, Kuroi, Takashi

Volltext