Improvement of High-Frequency Characteristics of InGaAsSb-Base Double Heterojunction Bipolar Transistors by Inserting a Highly Doped GaAsSb Base Contact Layer von Kashio, Norihide, Hoshi, Takuya, Kurishima, Kenji, Ida, Minoru, Matsuzaki, Hideaki

Volltext

Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz fmax and 5-V Breakdown Voltage von KASHIO, Norihide, HOSHI, Takuya, KURISHIMA, Kenji, IDA, Minoru, MATSUZAKI, Hideaki

Volltext

Impact of strained GaAs spacer between InP emitter and GaAs1−ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1−ySby/InP DHBTs von Hoshi, Takuya, Kashio, Norihide, Sugiyama, Hiroki, Yokoyama, Haruki, Kurishima, Kenji, Ida, Minoru, Matsuzaki, Hideaki, Kohtoku, Masaki

Volltext

Low-Cost Optoelectronic Self-Injection-Locked Oscillators von Kwang-Hyun Lee, Jae-Young Kim, Woo-Young Choi, Kamitsuna, H., Ida, M., Kurishima, K.

Volltext

Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity von KURISHIMA, Kenji, IDA, Minoru, KASHIO, Norihide, FUKAI, Yoshino K.

Volltext

An InP-Based 27-GHz-Bandwidth Limiting TIA IC Designed to Suppress Undershoot and Ringing in Its Output Waveform von FUKUYAMA, Hiroyuki, HIRATA, Michihiro, KURISHIMA, Kenji, IDA, Minoru, TOKUMITSU, Masami, YAMANAKA, Shogo, NAGATANI, Munehiko, ITOH, Toshihiro, SANO, Kimikazu, NOSAKA, Hideyuki, MURATA, Koichi

Volltext

Improvement of current gain of C-doped GaAsSb-base heterojunction bipolar transistors by using an InAlP emitter von Oda, Yasuhiro, Yokoyama, Haruki, Kurishima, Kenji, Kobayashi, Takashi, Watanabe, Noriyuki, Uchida, Masahiro

Volltext

Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal von Fukai, Yoshino K., Kurishima, Kenji, Kashio, Norihide, Ida, Minoru, Yamahata, Shoji, Enoki, Takatomo

Volltext

Monolithic Integration of InP HBTs and Uni-Traveling-Carrier Photodiodes Using Nonselective Regrowth von Kashio, N., Kurishima, K., Sano, K., Ida, M., Watanabe, N., Fukuyama, H.

Volltext

Highly Reliable Submicron InP-Based HBTs with over 300-GHz ft von KASHIO, Norihide, KURISHIMA, Kenji, FUKAI, Yoshino K., YAMAHATA, Shoji

Volltext

56-Gb/s Optical Transmission Performance of an InP HBT PAM4 Driver Compensating for Nonlinearity of Extinction Curve of EAM von Kishi, Toshiki, Nagatani, Munehiko, Kanazawa, Shigeru, Kobayashi, Wataru, Yamazaki, Hiroshi, Ida, Minoru, Kurishima, Kenji, Nogawa, Masafumi, Kimura, Shunji, Nosaka, Hideyuki

Volltext

Over 450-GHz \(f_{\mathit {t}}\) and \(f_{\mathrm {max}}\) InP/InGaAs DHBTs With a Passivation Ledge Fabricated by Utilizing SiN/SiO2 Sidewall Spacers von Kashio, Norihide, Kurishima, Kenji, Ida, Minoru, Matsuzaki, Hideaki

Volltext

Over 450-GHz ft and fmax InP/InGaAs DHBTs With a Passivation Ledge Fabricated by Utilizing SiN/SiO2 Sidewall Spacers von Kashio, Norihide, Kurishima, Kenji, Ida, Minoru, Matsuzaki, Hideaki

Volltext

Over 450-GHz \(f_{\mathit {t}}\) and \(f_{\mathrm {max}}\) InP/InGaAs DHBTs With a Passivation Ledge Fabricated by Utilizing SiN/SiO sub(2) Sidewall Spacers von Kashio, Norihide, Kurishima, Kenji, Ida, Minoru, Matsuzaki, Hideaki

Volltext

Composition- and Doping-Graded-Base InP/InGaAsSb Double Heterojunction Bipolar Transistors Exhibiting Simultaneous \(f\) and \(f}\) of Over 500 GHz von Kashio, Norihide, Hoshi, Takuya, Kurishima, Kenji, Ida, Minoru, Matsuzaki, Hideaki

Volltext

C-doped GaAsSb base HBT without hydrogen passivation grown by MOVPE von Oda, Yasuhiro, Watanabe, Noriyuki, Uchida, Masahiro, Kurishima, Kenji, Kobayashi, Takashi

Volltext

Design and Fabrication of Mixed Electronics-Optics Modulator for Dual-Carrier QPSK Generation von Kikuchi, Kiyofumi, Nosaka, Hideyuki, Yamazaki, Hiroshi, Nagatani, Munehiko, Goh, Takashi, Kurishima, Kenji, Saida, Takashi

Volltext

Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity von KURISHIMA, Kenji, IDA, Minoru, KASHIO, Norihide, FUKAI, Yoshino K

Volltext

High-Performance Composite-Collector InP/InGaAs Heterojunction Bipolar Transistors von Kurishima, Kenji, Ida, Minoru, Ishii, Kiyoshi, Watanabe, Noriyuki

Volltext

Composition and doping control for metal-organic chemical vapor deposition of InP-based double heterojunction bipolar transistor with hybrid base structure consisting of GaAsSb con... von Hoshi, Takuya, Kashio, Norihide, Sugiyama, Hiroki, Yokoyama, Haruki, Kurishima, Kenji, Ida, Minoru, Matsuzaki, Hideaki

Volltext