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  1. 1
    High current density in amorphous silicon/siliconcarbide double-barrier resonant tunneling device on aluminum/silicon substrate

    High current density in amorphous silicon/siliconcarbide double-barrier resonant tunneling device on aluminum/silicon substrate von KUIN-HUI CHEN, YEAN-KUEN FANG, CHING-RU LIU, JUN-DAR HWANG, KUN-SHIU WU


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  2. 2
    Observation of very high peak-to-valley current ratio (/spl ges/9.4) in amorphous silicon/silicon-carbide double barrier structure with barrier enhancement layer

    Observation of very high peak-to-valley current ratio (/spl ges/9.4) in amorphous silicon/silicon-carbide double barrier structure with barrier enhancement layer von Fang, Y.K., Chen, K.-H., Liu, C.-R., Hwang, J.-D., Wu, K.-S., Liou, W.-R.


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  3. 3
    Observation of very high peak-to-valley current ratio (≥9.4) in amorphous silicon/silicon-carbide double barrier structure in barrier enhancement layer

    Observation of very high peak-to-valley current ratio (≥9.4) in amorphous silicon/silicon-carbide double barrier structure in barrier enhancement layer von FANG, Y. K, KUIN-HUI CHEN, CHING-RU LIU, JUN-DAR HWANG, KUN-SHIU WU, WAN-RONE LIOU


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