Layered boron nitride as a release layer for mechanical transfer of GaN-based devices von Kobayashi, Yasuyuki, Kumakura, Kazuhide, Akasaka, Tetsuya, Makimoto, Toshiki

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Growth mechanism of Mn-doped diamond (111) layers in microwave plasma chemical vapor deposition von Kawano, Makoto, Hirama, Kazuyuki, Taniyasu, Yoshitaka, Kumakura, Kazuhide

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Control of n-type electrical conductivity for cubic boron nitride (c-BN) epitaxial layers by Si doping von Hirama, Kazuyuki, Taniyasu, Yoshitaka, Yamamoto, Hideki, Kumakura, Kazuhide

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Infinite-layer phase formation in the Ca1–xSrxCuO2 system by reactive molecular beam epitaxy von Krockenberger, Yoshiharu, Ikeda, Ai, Kumakura, Kazuhide, Yamamoto, Hideki

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Structural analysis of cubic boron nitride (111) films heteroepitaxially grown on diamond (111) substrates von Hirama, Kazuyuki, Taniyasu, Yoshitaka, Yamamoto, Hideki, Kumakura, Kazuhide

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Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN von Hiroki, Masanobu, Kumakura, Kazuhide, Kobayashi, Yasuyuki, Akasaka, Tetsuya, Makimoto, Toshiki, Yamamoto, Hideki

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Photoelectrochemical Properties of Gallium-nitride-based Photoanode in Tandem Cell Analyzed by AC Impedance Method von UZUMAKI, Yuya, ONO, Yoko, KUMAKURA, Kazuhide, KOMATSU, Takeshi, ARATAKE, Atsushi, MINOWA, Hironobu

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Efficient heat dissipation in AlGaN/GaN high electron mobility transistors by substrate‐transfer technique von Hiroki, Masanobu, Kumakura, Kazuhide, Yamamoto, Hideki

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Surface morphology control of nonpolar m‐plane AlN homoepitaxial layers by flow‐rate modulation epitaxy von Nishinaka, Junichi, Taniyasu, Yoshitaka, Akasaka, Tetsuya, Kumakura, Kazuhide

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A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN von Makimoto, Toshiki, Kumakura, Kazuhide, Kobayashi, Yasuyuki, Akasaka, Tetsuya, Yamamoto, Hideki

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Wurtzite GaP nanowire grown by using tertiarybutylchloride and used to fabricate solar cell von Tateno, Kouta, Zhang, Guoqiang, Sasaki, Satoshi, Takiguchi, Masato, Kumakura, Kazuhide

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Enhancement of performance of AlGaN/GaN high-electron-mobility transistors by transfer from sapphire to a copper plate von Hiroki, Masanobu, Kumakura, Kazuhide, Yamamoto, Hideki

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Heteroepitaxial growth of single-domain cubic boron nitride films by ion-beam-assisted MBE von Hirama, Kazuyuki, Taniyasu, Yoshitaka, Karimoto, Shin-ichi, Yamamoto, Hideki, Kumakura, Kazuhide

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Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors von Hiroki, Masanobu, Oda, Yasuhiro, Watanabe, Noriyuki, Maeda, Narihiko, Yokoyama, Haruki, Kumakura, Kazuhide, Yamamoto, Hideki

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Mg-acceptor activation mechanism and transport characteristics in p -type InGaN grown by metalorganic vapor phase epitaxy von Kumakura, Kazuhide, Makimoto, Toshiki, Kobayashi, Naoki

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Initial stage of hexagonal boron nitride growth in diffusion and precipitation method von Suzuki, Satoru, Ogawa, Yui, Wang, Shengnan, Kumakura, Kazuhide

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Epitaxial growth of monolayer MoSe2 on GaAs von Onomitsu, Koji, Krajewska, Aleksandra, Neufeld, Ryan A. E., Maeda, Fumihiko, Kumakura, Kazuhide, Yamamoto, Hideki

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High-Temperature Performance of AlN MESFETs With Epitaxially Grown n-Type AlN Channel Layers von Hiroki, Masanobu, Taniyasu, Yoshitaka, Kumakura, Kazuhide

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Erratum: “Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN” [Appl. Phys. Lett. 105 , 193509 (2014)]... von Hiroki, Masanobu, Kumakura, Kazuhide, Kobayashi, Yasuyuki, Akasaka, Tetsuya, Makimoto, Toshiki, Yamamoto, Hideki

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Molecular beam epitaxy of Nd2PdO4 thin films von Nanao, Yoshiko, Ikeda, Ai, Naito, Michio, Yamamoto, Hideki, Kumakura, Kazuhide, Krockenberger, Yoshiharu

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