High efficiency thin film silicon solar cells prepared by zone-melting recrystallization von ISHIHARA, T, ARIMOTO, S, MORIKAWA, H, KUMABE, H, MUROTANI, T, MITSUI, S

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High-efficient operation of large-area (100 cm 2) thin film polycrystalline silicon solar cell based on SOI structure von Arimoto, S., Morikawa, H., Deguchi, M., Kawama, Y., Matsuno, Y., Ishihara, T., Kumabe, H., Murotani, T.

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Crack-free and low dislocation density GaAs-on-Si grown by 2-reactor MOCVD system von Nishimura, T., Kadoiwa, K., Miyashita, M., Kumabe, H., Murotani, T.

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A very narrow-beam AlGaAs laser with a thin tapered-thickness active layer (T3laser) von Murakami, T., Ohtaki, K., Matsubara, H., Yamawaki, T., Saito, H., Isshiki, K., Kokubo, Y., Shima, A., Kumabe, H., Susaki, W.

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Effect of harvesting time and low-temperature treatment on germination of corm in taro (Colocasia esculenta Schott) von Murakami, K.(Okayama Univ. (Japan)), Kumabe, H, Kimura, M

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Characterization of thickness dependence on defect density and hydrogen passivation for thin film polycrystalline silicon solar cells von Arimoto, S., Morikawa, H., Deguchi, M., Kawama, Y., Matsuno, Y., Ishihara, T., Kumabe, H., Murotani, T.

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Ten-thousand-hour operation of crank transverse-junction-stripe lasers grown by metal-organic chemical vapor deposition von Isshiki, K., Kaneno, N., Kumabe, H., Namizaki, H., Ikeda, K., Susaki, W.

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Prospect of the high efficiency for the VEST (via-hole etching for the separation of thin films) cell von Deguchi, M., Kawama, Y., Matsuno, Y., Nishimoto, Y., Morikawa, H., Arimoto, S., Kumabe, H., Murotani, T.

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High temperature single-mode cw operation with a junction-up TJS laser von Kumabe, Hisao, Tanaka, Toshio, Namizaki, Hirofumi, Ishii, Makoto, Susaki, Wataru

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Spontaneous emission behavior in AlGaAs TJS lasers von Namizaki, H., Kumabe, H., Susaki, W.

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The trend of tuberculosis in Japan during the period 1953-64. Comparison of the results of tuberculosis prevalence surveys von Wakamatsu, E, Oka, H, Kumabe, H, Kobayashi, A

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Effect of employing positions of thermal cyclic annealing and strained-layer superlattice on defect reduction in GaAs-on-Si von HAYAFUJI, N, MIYASHITA, M, NISHIMURA, T, KADOIWA, K, KUMABE, H, MUROTANI, T

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The trend of tuberculosis in Japan during the period 1953-58. Comparison of the results of tuberculosis prevalence surveys von OMURA, T, OKA, H, KUMABE, H, KOBAYASHI, A

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Survey of tuberculosis prevalence in Japan, 1954: trends in tuberculosis from 1953 to 1954 von YAMAGUCHI, M, OKA, H, KUMABE, H, YOSANO, H

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Large scale MOCVD growth of GaAs-on-Si by atomic layer epitaxy using initial buffer layers von Hayafuji, Norio, Miyashita, Motoharu, Kumabe, Hisao, Murotani, Toshio

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Light Trapping for Thin-Film Silicon Solar Cells Fabricated on Insulator von Sasaki, Hajime, Morikawa, Hiroaki, Matsuno, Yoshinori, Deguchi, Mikio, Ishihara, Takashi, Kumabe, Hisao, Murotani, Toshio, Shigeru Mitsui, Shigeru Mitsui

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Surface morphology improvement of GaAs-on-Si using a two-reactor MOCVD system and an AlAs/GaAs low temperature buffer layer: an approach to crack-free GaAs-on-Si von Nishimura, T., Kadoiwa, K., Hayafuji, N., Miyashita, M., Mitsui, K., Kumabe, H., Murotani, T.

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Crack propagation and mechanical fracture in GaAs-on-Si von HAYAFUJI, N, KIZUKI, H, MIYASHITA, M, KADOIWA, K, NISHIMURA, T, OGASAWARA, N, KUMABE, H, MUROTANI, T, TADA, A

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Liquid phase epitaxial growth of GaAs from AuGeNi melts von Otsubo, M., Kumabe, H., Miki, H.

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Preferential Etching of GaAs Through Photoresist Masks von Otsubo, Mutsuyuki, Oda, Takao, Kumabe, Hisao, Miki, Hidejiro

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