Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction von Jiménez-Molinos, F., Vinuesa, G., García, H., Tarre, A., Tamm, A., Kalam, K., Kukli, K., Dueñas, S., Castán, H., González, M. B., Campabadal, F., Roldán, J. B.

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Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Tetrakis(ethylmethylamide) and Water von Kukli, K., Ritala, M., Sajavaara, T., Keinonen, J., Leskelä, M.

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The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal–Insulator–Metal (MIM) Devices for Memory Applications von Dueñas, S., Castán, H., García, H., Ossorio, O. G., Domínguez, L. A., Seemen, H., Tamm, A., Kukli, K., Aarik, J.

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Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor von Niinistö, J., Putkonen, M., Niinistö, L., Kukli, K., Ritala, M., Leskelä, M.

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Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition von Castán, H., García, H., Dueñas, S., Bailón, L., Miranda, E., Kukli, K., Kemell, M., Ritala, M., Leskelä, M.

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Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon von Dueñas, S., Castán, H., García, H., de Castro, A., Bailón, L., Kukli, K., Aidla, A., Aarik, J., Mändar, H., Uustare, T., Lu, J., Hårsta, A.

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Nitrogen induced modifications of MANOS memory properties von Nikolaou, N., Ioannou-Sougleridis, V., Dimitrakis, P., Normand, P., Skarlatos, D., Giannakopoulos, K., Ladas, S., Pecassou, B., BenAssayag, G., Kukli, K., Niinistö, J., Ritala, M., Leskelä, M.

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Charge and current hysteresis in dysprosium-doped zirconium oxide thin films von Castán, H., Dueñas, S., García, H., Bailón, L., Kukli, K., Tamm, A., Kozlova, J., Aarik, J., Mizohata, K.

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Influence of growth and annealing temperatures on the electrical properties of Nb2O5-based MIM capacitors von García, H, Castán, H, Perez, E, Dueñas, S, Bailón, L, Blanquart, T, Niinistö, J, Kukli, K, Ritala, M, Leskelä, M

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Crystallization in hafnia- and zirconia-based systems von Ushakov, S. V., Navrotsky, A., Yang, Y., Stemmer, S., Kukli, K., Ritala, M., Leskelä, M. A., Fejes, P., Demkov, A., Wang, C., Nguyen, B.-Y., Triyoso, D., Tobin, P.

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Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum-Aluminum Oxide Films von Kukli, K., Ritala, M., Pore, V., Leskelä, M., Sajavaara, T., Hegde, R. I., Gilmer, D. C., Tobin, P. J., Jones, A. C., Aspinall, H. C.

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A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition von Dueñas, S, Castán, H, García, H, Andrés, E San, Toledano-Luque, M, Mártil, I, González-Díaz, G, Kukli, K, Uustare, T, Aarik, J

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In Situ Mass Spectrometry Study on Atomic Layer Deposition from Metal (Ti, Ta, and Nb) Ethoxides and Water von Rahtu, Antti, Kukli, Kaupo, Ritala, Mikko

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Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors von Blasco, J., Castán, H., García, H., Dueñas, S., Suñé, J., Kemell, M., Kukli, K., Ritala, M., Leskelä, M., Miranda, E.

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Atomic Layer Deposition of Hafnium Dioxide Films Using Hafnium Bis(2-butanolate)bis(1-methoxy-2-methyl-2-propanolate) and Water von Kukli, K., Ritala, M., Leskelä, M., Sajavaara, T., Keinonen, J., Jones, A.C., Roberts, J.L.

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Electrical Properties of Atomic-Layer-Deposited Thin Gadolinium Oxide High-k Gate Dielectrics von Dueñas, S., Castán, H., García, H., Gómez, A., Bailón, L., Kukli, K., Hatanpää, T., Lu, J., Ritala, M., Leskelä, M.

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Dry-etched silicon-on-insulator waveguides with low propagation and fiber-coupling losses von Solehmainen, K., Aalto, T., Dekker, J., Kapulainen, M., Harjanne, M., Kukli, K., Heimala, P., Kolari, K., Leskela, M.

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Low-Temperature Deposition of Zirconium Oxide-Based Nanocrystalline Films by Alternate Supply of Zr[OC(CH3)3]4 and H2O von Kukli, K., Ritala, M., Leskelä, M.

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Analytical TEM characterization of the interfacial layer between ALD HfO2 film and silicon substrate von LU, J, AARIK, J, SUNDQVIST, J, KUKLI, K, HARSTA, A, CARLSSON, J.-O

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Atomic layer deposition of ZrO2 and HfO2 on deep trenched and planar silicon von KUKLI, K, NIINISTO, J, HEYS, P. N, TAMM, A, LU, J, RITALA, M, LESKELÄ, M, PUTKONEN, M, NIINISTO, L, SONG, F, WILLIAMS, P

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