A novel amorphous silicon doping superlattice device with a controllable gate von CHING-RU LIU, YEAN-KUEN FANG, KUIN-HUI CHEN, JUN-DAR HWANG

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A silicon double switching inversion-controlled switch for multiple-valued logic applications von Fang, Y.K., Ching-Ru Liu, Kuin-Hui Chen, Jun-Dar Hwang

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A novel amorphous silicon double barrier homojunction device with negative resistance von YEAN-KUEN FANG, KUIN-HUI CHEN, CHING-RU LIU

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Novel amorphous-crystalline silicon heterojunction switching devices with bidirectional switching characteristics von Chen, Kuin-Hui, Fang, Yean-Kuen, Liu, Ching-Ru, Kuo, Bou-Chen Fang

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High current density in amorphous silicon/siliconcarbide double-barrier resonant tunneling device on aluminum/silicon substrate von KUIN-HUI CHEN, YEAN-KUEN FANG, CHING-RU LIU, JUN-DAR HWANG, KUN-SHIU WU

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Amorphous Silicon Double-Injection Device with Gate-Controllable N-Type Negative Resistance von Chen, Kuin-Hui, Fang, Yean-Kuen, Liu, Ching-Ru, Hwang, Jun-Dar, Kuo, Yue-Kae Lin

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An amorphous SiC/Si heterojunction p-i-n diode for low-noise and high-sensitivity UV detector von Fang, Y.K., Hwang, S.-B., Chen, K.-H., Liu, C.-R., Tsai, M.-J., Kuo, L.-C.

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An a-Si:H/a-Si,Ge:H bulk barrier phototransistor with a-SiC:H barrier enhancement layer for high-gain IR optical detector von Hwang, S.-B., Fang, Y.K., Chen, K.-H., Liu, C.-R., Hwang, J.-D., Chou, M.-H.

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A metal-amorphous silicon-germanium alloy Schottky barrier for infrared optoelectronic IC on glass substrate application von Fang, Y.K., Hwang, S.-B., Chen, K.-H., Liu, C.-R., Kuo, L.-C.

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Observation of very high peak-to-valley current ratio (/spl ges/9.4) in amorphous silicon/silicon-carbide double barrier structure with barrier enhancement layer von Fang, Y.K., Chen, K.-H., Liu, C.-R., Hwang, J.-D., Wu, K.-S., Liou, W.-R.

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Observation of very high peak-to-valley current ratio (≥9.4) in amorphous silicon/silicon-carbide double barrier structure in barrier enhancement layer von FANG, Y. K, KUIN-HUI CHEN, CHING-RU LIU, JUN-DAR HWANG, KUN-SHIU WU, WAN-RONE LIOU

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