Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors von Kotlyar, R., Avci, U. E., Cea, S., Rios, R., Linton, T. D., Kuhn, K. J., Young, I. A.

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Considerations for Ultimate CMOS Scaling von Kuhn, K. J.

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Does the low hole transport mass in 〈110〉 and 〈111〉 Si nanowires lead to mobility enhancements at high field and stress: A self-consistent tight-binding study von Kotlyar, R., Linton, T. D., Rios, R., Giles, M. D., Cea, S. M., Kuhn, K. J., Povolotskyi, Michael, Kubis, Tillmann, Klimeck, Gerhard

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A Renewable-Reagent Fiber-Optic Sensor for Measurement of High Acidities von Kuhn, Kevin J, Dyke, James T

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(Invited) Past, Present and Future: SiGe and CMOS Transistor Scaling von Kuhn, Kelin J., Murthy, Anand, Kotlyar, Roza, Kuhn, Markus

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On the mechanical γ-relaxation modes of polycarbonate von Hörth, F.J., Kuhn, K.J., Mertes, J., Hellmann, G.P.

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Doping top-down e-beam fabricated germanium nanowires using molecular monolayers von Long, B., Alessio Verni, G., O’Connell, J., Shayesteh, M., Gangnaik, A., Georgiev, Y.M., Carolan, P., O’Connell, D., Kuhn, K.J., Clendenning, S.B., Nagle, R., Duffy, R., Holmes, J.D.

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On the intermolecular order in amorphous polycarbonate. Neutron scattering results and model calculations von Červinka, L., Fischer, E.W., Hahn, K., Jiang, B.-Z., Hellmann, G.P., Kuhn, K.-J.

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Free carrier induced changes in the absorption and refractive index for intersubband optical transitions in AlxGa1-xAs/GaAs/AlxGa1-xAs quantum wells von KUHN, K. J, IYENGAR, G. U, YEE, S

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Total aberrations compensation in digital holographic microscopy with a reference conjugated hologram von Colomb, Tristan, Kühn, Jonas, Charrière, Florian, Depeursinge, Christian, Marquet, Pierre, Aspert, Nicolas

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An indium‐free substrate holder for radiative heating of quarter‐wafer molecular‐beam epitaxy samples von Kuhn, K. J.

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Electric field effects in AlGaAs-GaAs symmetric and asymmetric coupled quantum wells von Juang, C., Kuhn, K.J., Darling, R.B.

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Fragmentation of polycarbonate macroinitiators in solution and in the bulk state von Kuhn, K. J., Hellmann, G. P.

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Use of active loads with MSM photodetectors in digital GaAs MESFET photoreceivers von Darling, R.B., Youn, H.J., Kuhn, K.J.

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Chain fragmentation under liquid-state and solid-state conditions von Hellmann, E. H., Kuhn, K. J., Hellmann, G. P., Rennie, A. R.

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Diffusion after chain fragmentation in the glassy state: A SANS study von Meurer, E., Kuhn, K. J., Hellmann, G. P., Rennie, A. R.

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Optical properties due to intersubband transitions in n-type quantum wells including the effects of the exchange interaction von SENGERS, A. J, TSANG, L, KUHN, K. J

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Band-offset ratio dependence on the effective-mass Hamiltonian based on a modified profile of the GaAs-AlxGa1-xAs quantum well von LI, T. L, KUHN, K. J

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