High lateral to vertical ratio etch process for device manufacturing von Lee, Kyeong Tae, Choi, Sang-jun, Kim, Sang Wook, Kuh, Jahyong, Weon, Daehee, Bhaviripudi, Sreekar

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HIGH LATERAL TO VERTICAL RATIO ETCH PROCESS FOR DEVICE MANUFACTURING von Lee, Kyeong Tae, Choi, Sang-jun, Kim, Sang Wook, Kuh, Jahyong, Weon, Daehee, Bhaviripudi, Sreekar

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High lateral to vertical ratio etch process for device manufacturing von Lee, Kyeong Tae, Choi, Sang-jun, Kim, Sang Wook, Kuh, Jahyong, Weon, Daehee, Bhaviripudi, Sreekar

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HIGH LATERAL TO VERTICAL RATIO ETCH PROCESS FOR DEVICE MANUFACTURING von WEON DAEHEE, KUH JAHYONG, CHOI SANG-JUN, BHAVIRIPUDI SREEKAR, LEE KYEONG TAE, KIM SANG WOOK

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High lateral to vertical ratio etch process for device manufacturing von WEON DAEHEE, KUH JAHYONG, CHOI SANG-JUN, BHAVIRIPUDI SREEKAR, LEE KYEONG TAE, KIM SANG WOOK

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HIGH LATERAL TO VERTICAL RATIO ETCH PROCESS FOR DEVICE MANUFACTURING von WEON DAEHEE, KUH JAHYONG, CHOI SANG-JUN, BHAVIRIPUDI SREEKAR, LEE KYEONG TAE, KIM SANG WOOK

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Erratum: NbSe 3 : Effect of uniaxial stress on the threshold field and fermiology [Phys. Rev. B 57 , 14 576 (1998)] von Kuh, Jahyong, Tseng, Y. T., Wagner, Keith, Brooks, Jay, Tessema, G. X., Skove, M. J.

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NbSe 3 : Effect of uniaxial stress on the threshold field and fermiology von Kuh, Jahyong, Tseng, Y. T., Wagner, Keith, Brooks, Jay, Tessema, G. X., Skove, M. J.

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