High quality AlGaN grown on ELO AlN/sapphire templates von Zeimer, U., Kueller, V., Knauer, A., Mogilatenko, A., Weyers, M., Kneissl, M.

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Advances in group III-nitride-based deep UV light-emitting diode technology von Kneissl, M, Kolbe, T, Chua, C, Kueller, V, Lobo, N, Stellmach, J, Knauer, A, Rodriguez, H, Einfeldt, S, Yang, Z, Johnson, N M, Weyers, M

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Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes von Martens, M., Kuhn, C., Ziffer, E., Simoneit, T., Kueller, V., Knauer, A., Rass, J., Wernicke, T., Einfeldt, S., Weyers, M., Kneissl, M.

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Controlled coalescence of MOVPE grown AlN during lateral overgrowth von Kueller, V., Knauer, A., Zeimer, U., Kneissl, M., Weyers, M.

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Growth of AlGaN and AlN on patterned AlN/sapphire templates von Kueller, V., Knauer, A., Brunner, F., Zeimer, U., Rodriguez, H., Kneissl, M., Weyers, M.

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AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates von Knauer, A., Kueller, V., Zeimer, U., Weyers, M., Reich, C., Kneissl, M.

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Effective Thermal Management in Ultraviolet Light-Emitting Diodes With Micro-LED Arrays von Lobo Ploch, N., Rodriguez, H., Stolmacker, C., Hoppe, M., Lapeyrade, M., Stellmach, J., Mehnke, F., Wernicke, T., Knauer, A., Kueller, V., Weyers, M., Einfeldt, S., Kneissl, M.

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Stress evolution during AlxGa1−xN/AlN growth on sapphire von Brunner, F., Mogilatenko, A., Kueller, V., Knauer, A., Weyers, M.

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Efficient carrier-injection and electron-confinement in UV-B light-emitting diodes von Kolbe, T., Stellmach, J., Mehnke, F., Rothe, M.-A., Kueller, V., Knauer, A., Einfeldt, S., Wernicke, T., Weyers, M., Kneissl, M.

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(Al,Ga)N overgrowth over AlN ridges oriented in [1120] and [1100] direction von Kueller, V., Knauer, A., Zeimer, U., Rodriguez, H., Mogilatenko, A., Kneissl, M., Weyers, M.

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MOVPE growth of AlxGa1-xN with x ∼ 0.5 on epitaxial laterally overgrown AlN/sapphire templates for UV-LEDs von Knauer, A., Zeimer, U., Kueller, V., Weyers, M.

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Investigation of the temperature dependent efficiency droop in UV LEDs von Ploch, N Lobo, Einfeldt, S, Frentrup, M, Rass, J, Wernicke, T, Knauer, A, Kueller, V, Weyers, M, Kneissl, M

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AlGaN photodetectors for the UV-C spectral region on planar and epitaxial laterally overgrown AlN/sapphire templates von Knigge, A., Brendel, M., Brunner, F., Einfeldt, S., Knauer, A., Kueller, V., Weyers, M.

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Enhanced quantum efficiency of AlGaN photodetectors by patterned growth von Knigge, A., Brendel, M., Zeimer, U., Helbling, M., Knauer, A., Brunner, F., Kueller, V., Einfeldt, S., Weyers, M.

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Anisotropic Responsivity of AlGaN Metal–Semiconductor–Metal Photodetectors on Epitaxial Laterally Overgrown AlN/Sapphire Templates von Brendel, M., Knigge, A., Brunner, F., Einfeldt, S., Knauer, A., Kueller, V., Zeimer, U., Weyers, M.

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Cathodoluminescence and TEM investigations of structural and optical properties of AlGaN on epitaxial laterally overgrown AlN/sapphire templates von Zeimer, U, Mogilatenko, A, Kueller, V, Knauer, A, Weyers, M

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Solar-blind AlxGa1-xN MSM photodetectors on patterned AlN/sapphire templates with 0.4 < x < 1 von Knigge, A., Brendel, M., Brunner, F., Einfeldt, S., Knauer, A., Kueller, V., Zeimer, U., Weyers, M.

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Modulated Epitaxial Lateral Overgrowth of AlN for Efficient UV LEDs von Kueller, V., Knauer, A., Reich, C., Mogilatenko, A., Weyers, M., Stellmach, J., Wernicke, T., Kneissl, M., Zhihong Yang, Chua, C. L., Johnson, N. M.

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Stress evolution during Al sub(x)Ga sub(1-x)N/AlN growth on sapphire von Brunner, F, Mogilatenko, A, Kueller, V, Knauer, A, Weyers, M

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Stress evolution during AlxGa1axN/AlN growth on sapphire von Brunner, F, Mogilatenko, A, Kueller, V, Knauer, A, Weyers, M

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