1200V SiC Trench-MOSFET optimized for high reliability and high performance von Peters, D., Aichinger, T., Basler, T., Bergner, W., Kueck, D., Esteve, R.

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Investigation on wet etching 4H-SiC damaged by ion implantation von Guillemin, Sophie, Esteve, Romain, Heidorn, Christian, Unegg, Gerald, Reinwald, Gerald, Hartl, Marcella, Kueck, Daniel

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Mixing time and mass transfer of rising bubbles in swarm turbulence von Kück, Ulf Daniel, Mießner, Ulrich, Aydin, Murat, Thöming, Jorg

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650V SiC JFET for High Efficiency Applications von Rupp, Roland, Bergner, Wolfgang, Kueck, Daniel, Kirchner, Uwe

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Passivation of H-terminated diamond with MOCVD-aluminium nitride - a key to understand and stabilize its surface conductivity von Kueck, Daniel, Scharpf, Jochen, Ebert, Wolfgang, Fikry, Mohamed, Scholz, Ferdinand, Kohn, Erhard

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Modelling gas‐liquid mass transfer in a two‐phase jet flow von Heithoff, Susanne, Kück, Ulf Daniel, Volkmer, Pascal, Fritsching, Udo, Räbiger, Norbert

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The modeling of transport processes in Mehrphasenstromungen - the example of the jet zone loop reactor von Heithoff, Susanne, Kueck, Ulf Daniel, Miesner, Ulrich, Schlueter, Michael

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Semiconductor device von Elpelt, Rudolf, Kueck, Daniel

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Extended Model for Theoretical Determination of Mass Transfer Coefficients in Multiphase Flows – Part 2 von John, Saskia, Dujardin, Viviane, Kück, Ulf Daniel, Mießner, Ulrich, Räbiger, Norbert

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Extended Model for Theoretical Determination of Mass Transfer Coefficients in Multiphase Flows – Part 1 von John, Saskia, Dujardin, Viviane, Kück, Ulf Daniel, Mießner, Ulrich, Räbiger, Norbert

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SEMICONDUCTOR DEVICE von KUECK DANIEL, ELPELT RUDOLF

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Semiconductor device von KUECK DANIEL, ELPELT RUDOLF

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SiC semiconductor device with offset in trench bottom von Siemieniec, Ralf, Aichinger, Thomas, Kueck, Daniel, Esteve, Romain

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Semiconductor Device von KUECK DANIEL, ELPELT RUDOLF

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Silicon carbide field-effect transistor including shielding areas von Bergner, Wolfgang, Elpelt, Rudolf, Siemieniec, Ralf, Aichinger, Thomas, Kueck, Daniel, Peters, Dethard, Hell, Michael, Basler, Thomas, Schulze, Hans-Joachim, Leendertz, Caspar, Esteve, Romain

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Method of forming compound semiconductor body von Curatola, Gilberto, Siemieniec, Ralf, Kueck, Daniel, Esteve, Romain

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Multiscale Description of Mass Transfer Processes for Gas‐Liquid Reactions von Kück, Ulf D., Kröger, Michael, Bothe, Dieter, Räbiger, N., Schlüter, Michael, Warnecke, Hans‐Joachim

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Method of Forming Compound Semiconductor Body von Curatola, Gilberto, Siemieniec, Ralf, Kueck, Daniel, Esteve, Romain

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SiC Semiconductor Device with Offset in Trench Bottom von Siemieniec, Ralf, Aichinger, Thomas, Kueck, Daniel, Esteve, Romain

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Semiconductor device with transistor cells and a drift structure and method of manufacturing von Bergner, Wolfgang, Aichinger, Thomas, Kueck, Daniel, Siemieniec, Ralf, Peters, Dethard, Zippelius, Bernd, Esteve, Romain

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