Thermal stability of Al- and Zr-doped HfO2 thin films grown by direct current magnetron sputtering von Hong, Yeong-Eui, Kim, Yong-Seok, Do, Kihoon, Lee, Dongwon, Ko, Dae-Hong, Ku, Ja-Hum, Kim, Hyoungsub

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Influence of annealing condition on the properties of sputtered hafnium oxide von Nam, Seok-Woo, Yoo, Jung-Ho, Nam, Suheun, Choi, Hyo-Jick, Lee, Dongwon, Ko, Dae-Hong, Moon, Joo Ho, Ku, Ja-Hum, Choi, Siyoung

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Performance of DRAM Cell Transistor with Thermal Desorption Silicon Etching (TDSE) and Selective Si Channel Epi Techniques von Kim, Chul-Sung, Ku, Ja-Hum, Lee, Byeong-Chan, Yoo, Jong-Ryeol, Lee, Deok-Hyung, Choi, Siyoung, Chung, U-In, Moon, Joo-Tae

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Physical and electrical degradation of ZrO2 thin films with aluminum electrodes von Nam, Seok-Woo, Yoo, Jung-Ho, Nam, Suheun, Ko, Dae-Hong, Ku, Ja-Hum, Yang, Cheol-Woong

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Characteristics of ZrO2 films with Al and Pt gate electrodes von NAM, Seok-Woo, YOO, Jung-Ho, NAM, Suheun, KO, Dae-Hong, YANG, Cheol-Woong, KU, Ja-Hum

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A study on the microstructure and electrical properties of CeO2 thin films for gate dielectric applications von YOO, Jung-Ho, NAM, Seok-Woo, KANG, Sung-Kwan, JEONG, Yun-Ha, KO, Dae-Hong, KU, Ja-Hum, LEE, Hoo-Jeong

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Formation and Thermal Stability of Ti-Capped Co-silicide from Co-Ta Alloy Films on (100) Si and Polycrystalline Silicon von Min-Joo, Kim, Hyo-Jick, Choi, Dae-Hong, Ko, Ja-Hum, Ku, Siyoung, Choi, Kazuyuki, Fujihara, Cheol-Woong, Yang

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Novel High-Performance Analog Devices for Advanced Low-Power High- k Metal Gate Complementary Metal–Oxide–Semiconductor Technology von Han, Jin-Ping, Shimizu, Takashi, Pan, Li-Hong, Voelker, Moritz, Bernicot, Christophe, Arnaud, Franck, Mocuta, Anda, Stahrenberg, Knut, Azuma, Atsushi, Eller, Manfred, Yang, Guoyong, Jaeger, Daniel, Zhuang, Haoren, Miyashita, Katsura, Stein, Kenneth, Nair, Deleep, Park, Jae Hoo, Kohler, Sabrina, Hamaguchi, Masafumi, Li, Weipeng, Kim, Kisang, Chanemougame, Daniel, Kim, Nam Sung, Uchimura, Sadaharu, Tsutsui, Gen, Wiedholz, Christian, Miyake, Shinich, Meer, Hans van, Liang, Jewel, Ostermayr, Martin, Lian, Jenny, Celik, Muhsin, Donaton, Ricardo, Barla, Kathy, Goto, Yoshiro, Sherony, Melanie, Johnson, Frank S., Wachnik, Richard, Sudijono, John, Kaste, Ed, Sampson, Ron, Ku, Ja-Hum, Steegen, An, Neumueller, Walter

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The effects of Ta on the formation of Ni-silicide in Ni 0.95xTa x0.05/Si systems von Lee, Dongwon, Do, Kihoon, Ko, Dae-Hong, Choi, Siyoung, Ku, Ja-Hum, Yang, Cheol-Woong

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Characteristics of ZrO[sub 2] Films with Al and Pt Gate Electrodes von Nam, Seok-Woo, Yoo, Jung-Ho, Nam, Suheun, Ko, Dae-Hong, Yang, Cheol-Woong, Ku, Ja-Hum

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Effect of a noble annealing system on nickel silicide formation von Sug-Woo Jung, Hyun-Su Kim, Eun-Ji Jung, Seong-Hwee Cheong, Jong-Ho Yun, Kwan-Jong Roh, Ja-Hum Ku, Gil-Heyun Choi, Sung-Tae Kim, U-In Chung, Joo-Tae Moon, Byung-Il Ryu

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Study of ZrO2 thin films for gate oxide applications von Nam, Seok-Woo, Yoo, Jung-Ho, Kim, Hae-Young, Kang, Sung-Kwan, Ko, Dae-Hong, Yang, Cheol-Woong, Lee, Hoo-Jeong, Cho, Mann-Ho, Ku, Ja-Hum

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The Schottky barrier of Co on strained and unstrained Si xGe 1− x alloys von Ku, Ja-Hum, Nemanich, R.J.

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Thermal stability of Al- and Zr-doped HfO{sub 2} thin films grown by direct current magnetron sputtering von Hong, Yeong-Eui, Kim, Yong-Seok, Do, Kihoon, Lee, Dongwon, Ko, Dae-Hong, Ku, Ja-Hum, Kim, Hyoungsub, Semiconductor R and D Division, Samsung Electronics Co, Ltd., San no. 24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyunggi-Do 449-711, Department of Advanced Materials Engineering, Sungkyunkwan University, 300 Chunchun-Dong, Jangan-Ku, Suwon 440-746

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Hydrogen evolution from strained Si x Ge1− x (100)2×1:H surfaces von Ku, Ja-Hum, Nemanich, R. J.

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New effect of Ti-capping layer in Co salicide process promising for deep sub-quarter micron technology von Ja-Hum Ku, Chul-Sung Kim, Chul-Joon Choi, Fujihara, K., Ho-Kyu Kang, Moon-Yong Lee, Ju-Hyuck Chung, Eung-Joon Lee, Jang-Eun Lee, Dae-Hong Ko

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Method and apparatus for manufacturing a semiconductor von Hierlemann, Matthias, Ku, Ja-Hum

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Semiconductor device including contact plug and method of manufacturing the same von Ku, Ja-Hum, Kim, Jeong-Ik, Eom, Da-Il, Park, Jun-Ki, Hyun, Sang-Jin, Kim, Chul-Sung

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Formation of High-Temperature Stable Co-Silicide from Co 0.92 Ta 0.08 /Si Systems von Lee, Deok-Hyung, Ko, Dae-Hong, Ku, Ja-Hum, Choi, Siyoung, Fujihara, Kazuyuki, Kang, Ho-Kyu, Oh, Sang-Ho, Park, Chan-Gyung, Lee, Hoo-Jeung

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Method of calibrating target values and processing systems configured to calibrate the target values von Kim Dae-Wook, Choi Sang-Jin, Kim Byoung-Hoon, Ku Ja-Hum, Han Chang-Ho, Park Han-Hum, Choi Sung-Won, Lee Jin-Young

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