Novel High-Performance Analog Devices for Advanced Low-Power High-$k$ Metal Gate Complementary Metal--Oxide--Semiconductor Technology von Han, Jin-Ping, Shimizu, Takashi, Pan, Li-Hong, Voelker, Moritz, Bernicot, Christophe, Arnaud, Franck, Mocuta, Anda, Stahrenberg, Knut, Azuma, Atsushi, Eller, Manfred, Yang, Guoyong, Jaeger, Daniel, Zhuang, Haoren, Miyashita, Katsura, Stein, Kenneth, Nair, Deleep, Park, Jae Hoo, Kohler, Sabrina, Hamaguchi, Masafumi, Li, Weipeng, Kim, Kisang, Chanemougame, Daniel, Kim, Nam Sung, Uchimura, Sadaharu, Tsutsui, Gen, Wiedholz, Christian, Miyake, Shinich, Meer, Hans van, Liang, Jewel, Ostermayr, Martin, Lian, Jenny, Celik, Muhsin, Donaton, Ricardo, Barla, Kathy, Na, MyungHee, Goto, Yoshiro, Sherony, Melanie, Johnson, Frank S, Wachnik, Richard, Sudijono, John, Kaste, Ed, Sampson, Ron, Ku, Ja-Hum, Steegen, An, Neumueller, Walter

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Thermal stability of Al- and Zr-doped HfO2 thin films grown by direct current magnetron sputtering von Hong, Yeong-Eui, Kim, Yong-Seok, Do, Kihoon, Lee, Dongwon, Ko, Dae-Hong, Ku, Ja-Hum, Kim, Hyoungsub

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Influence of annealing condition on the properties of sputtered hafnium oxide von Nam, Seok-Woo, Yoo, Jung-Ho, Nam, Suheun, Choi, Hyo-Jick, Lee, Dongwon, Ko, Dae-Hong, Moon, Joo Ho, Ku, Ja-Hum, Choi, Siyoung

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Performance of DRAM Cell Transistor with Thermal Desorption Silicon Etching (TDSE) and Selective Si Channel Epi Techniques von Kim, Chul-Sung, Ku, Ja-Hum, Lee, Byeong-Chan, Yoo, Jong-Ryeol, Lee, Deok-Hyung, Choi, Siyoung, Chung, U-In, Moon, Joo-Tae

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Channel Strain Characterization in Embedded SiGe by Nano-beam Diffraction von Li, Jinghong, Lamberti, Angela, Domenicucci, Anthony, Gignac, L., Utomo, Henry, Luo, Zhijiong, Rovedo, Nivo, Fang, Sunfei, Ng, Hung, Holt, Judson R., Madan, Anita, Lai, Chung Woh, Ku, Ja-Hum, Schepis, Dominic J., Han, Jin-Ping, Lagus, Mark

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Physical and electrical degradation of ZrO2 thin films with aluminum electrodes von Nam, Seok-Woo, Yoo, Jung-Ho, Nam, Suheun, Ko, Dae-Hong, Ku, Ja-Hum, Yang, Cheol-Woong

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Characteristics of ZrO2 films with Al and Pt gate electrodes von NAM, Seok-Woo, YOO, Jung-Ho, NAM, Suheun, KO, Dae-Hong, YANG, Cheol-Woong, KU, Ja-Hum

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A study on the microstructure and electrical properties of CeO2 thin films for gate dielectric applications von YOO, Jung-Ho, NAM, Seok-Woo, KANG, Sung-Kwan, JEONG, Yun-Ha, KO, Dae-Hong, KU, Ja-Hum, LEE, Hoo-Jeong

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Formation and Thermal Stability of Ti-Capped Co-silicide from Co-Ta Alloy Films on (100) Si and Polycrystalline Silicon von Min-Joo, Kim, Hyo-Jick, Choi, Dae-Hong, Ko, Ja-Hum, Ku, Siyoung, Choi, Kazuyuki, Fujihara, Cheol-Woong, Yang

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Novel High-Performance Analog Devices for Advanced Low-Power High- k Metal Gate Complementary Metal–Oxide–Semiconductor Technology von Han, Jin-Ping, Shimizu, Takashi, Pan, Li-Hong, Voelker, Moritz, Bernicot, Christophe, Arnaud, Franck, Mocuta, Anda, Stahrenberg, Knut, Azuma, Atsushi, Eller, Manfred, Yang, Guoyong, Jaeger, Daniel, Zhuang, Haoren, Miyashita, Katsura, Stein, Kenneth, Nair, Deleep, Park, Jae Hoo, Kohler, Sabrina, Hamaguchi, Masafumi, Li, Weipeng, Kim, Kisang, Chanemougame, Daniel, Kim, Nam Sung, Uchimura, Sadaharu, Tsutsui, Gen, Wiedholz, Christian, Miyake, Shinich, Meer, Hans van, Liang, Jewel, Ostermayr, Martin, Lian, Jenny, Celik, Muhsin, Donaton, Ricardo, Barla, Kathy, Goto, Yoshiro, Sherony, Melanie, Johnson, Frank S., Wachnik, Richard, Sudijono, John, Kaste, Ed, Sampson, Ron, Ku, Ja-Hum, Steegen, An, Neumueller, Walter

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The effects of Ta on the formation of Ni-silicide in Ni0.95xTax0.05/Si systems von Lee, Dongwon, Do, Kihoon, Ko, Dae-Hong, Choi, Siyoung, Ku, Ja-Hum, Yang, Cheol-Woong

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Thermal stability of Al- and Zr-doped HfO 2 thin films grown by direct current magnetron sputtering von Hong, Yeong-Eui, Kim, Yong-Seok, Do, Kihoon, Lee, Dongwon, Ko, Dae-Hong, Ku, Ja-Hum, Kim, Hyoungsub

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The effects of Ta on the formation of Ni-silicide in Ni 0.95xTa x0.05/Si systems von Lee, Dongwon, Do, Kihoon, Ko, Dae-Hong, Choi, Siyoung, Ku, Ja-Hum, Yang, Cheol-Woong

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Characteristics of ZrO[sub 2] Films with Al and Pt Gate Electrodes von Nam, Seok-Woo, Yoo, Jung-Ho, Nam, Suheun, Ko, Dae-Hong, Yang, Cheol-Woong, Ku, Ja-Hum

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Study of ZrO2 thin films for gate oxide applications von Nam, Seok-Woo, Yoo, Jung-Ho, Kim, Hae-Young, Kang, Sung-Kwan, Ko, Dae-Hong, Yang, Cheol-Woong, Lee, Hoo-Jeong, Cho, Mann-Ho, Ku, Ja-Hum

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The Schottky barrier of Co on strained and unstrained Si xGe 1− x alloys von Ku, Ja-Hum, Nemanich, R.J.

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Thermal stability of Al- and Zr-doped HfO{sub 2} thin films grown by direct current magnetron sputtering von Hong, Yeong-Eui, Kim, Yong-Seok, Do, Kihoon, Lee, Dongwon, Ko, Dae-Hong, Ku, Ja-Hum, Kim, Hyoungsub, Semiconductor R and D Division, Samsung Electronics Co, Ltd., San no. 24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyunggi-Do 449-711, Department of Advanced Materials Engineering, Sungkyunkwan University, 300 Chunchun-Dong, Jangan-Ku, Suwon 440-746

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Hydrogen evolution from strained Si x Ge1− x (100)2×1:H surfaces von Ku, Ja-Hum, Nemanich, R. J.

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Physical and electrical degradation of ZrO 2 thin films with aluminum electrodes von Nam, Seok-Woo, Yoo, Jung-Ho, Nam, Suheun, Ko, Dae-Hong, Ku, Ja-Hum, Yang, Cheol-Woong

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High Thermal Stability of Ni Monosilicide from Ni-Ta Alloy Films on Si(100) von Kim, Min-Joo, Choi, Hyo-Jick, Ko, Dae-Hong, Ku, Ja-Hum, Choi, Siyoung, Fujihara, Kazuyuki, Yang, Cheol-Woong

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