Melting versus Decomposition of GaN: Ab Initio Molecular Dynamics Study and Comparison to Experimental Data von Piechota, Jacek, Krukowski, Stanisław, Sadovyi, Bohdan, Sadovyi, Petro, Porowski, Sylwester, Grzegory, Izabella

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Augmentation of the electron counting rule with Ising model von Kawka, Karol, Kempisty, Paweł, Sakowski, Konrad, Krukowski, Stanisław, Boćkowski, Michał, Bowler, David, Kusaba, Akira

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Erratum: “Molecular nitrogen–N2 properties: The intermolecular potential and the equation of state” [J. Chem. Phys. 126, 194501 (2007)] von Strak, Pawel, Krukowski, Stanislaw

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Optical properties of polar and nonpolar GaN/AlN multiquantum well systems—DFT study von Ahmad, Ashfaq, Strak, Pawel, Sakowski, Konrad, Piechota, Jacek, Kempisty, Paweł, Kamińska, Agata, Krukowski, Stanisław

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Wurtzite quantum well structures under high pressure von Kaminska, Agata, Koronski, Kamil, Strak, Pawel, Sobczak, Kamil, Monroy, Eva, Krukowski, Stanislaw

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Fermi level influence on the adsorption at semiconductor surfaces— ab initio simulations von Krukowski, Stanisław, Kempisty, Paweł, Strąk, Paweł

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Report from the meetings of the International Organization for Crystal Growth governing bodies held during the ICCGE-20 Conference in Napoli, Italy July 30th – August 4th 2023 von Krukowski, Stanislaw

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On the nature of Surface States Stark Effect at clean GaN(0001) surface von Kempisty, Paweł, Krukowski, Stanisław

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Ab initio determination of electron affinity of polar nitride surfaces, clean and under Cs coverage von Strak, Pawel, Kempisty, Pawel, Sakowski, Konrad, Krukowski, Stanislaw

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Thermodynamic foundations of applications of ab initio methods for determination of the adsorbate equilibria: hydrogen at the GaN(0001) surface von Kempisty, Pawel, Strąk, Paweł, Sakowski, Konrad, Kangawa, Yoshihiro, Krukowski, Stanisław

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Adsorption of N2 and H2 at AlN(0001) Surface: Ab Initio Assessment of the Initial Stage of Ammonia Catalytic Synthesis von Strak, Pawel, Sakowski, Konrad, Kempisty, Pawel, Grzegory, Izabella, Krukowski, Stanislaw

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Structural and electronic properties of AlN(0001) surface under partial N coverage as determined by ab initio approach von Strak, Pawel, Sakowski, Konrad, Kempisty, Pawel, Krukowski, Stanislaw

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Intrasurface electron transition contribution to energy of adsorption of silicon at the SiC(0001) surface – A density functional theory (DFT) study von Krukowski, Stanisław, Sołtys, Jakub, Piechota, Jacek

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Chemical inactivity of GaN(0001) surface – The role of oxygen adsorption – Ab initio picture von Kempisty, Pawel, Strak, Paweł, Sakowski, Konrad, Krukowski, Stanisław

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Dissipation of the excess energy of the adsorbate-thermalization via electron transfer von Strak, Pawel, Sakowski, Konrad, Kempisty, Pawel, Krukowski, Stanislaw

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Polarization doping—Ab initio verification of the concept: Charge conservation and nonlocality von Ahmad, Ashfaq, Strak, Pawel, Kempisty, Pawel, Sakowski, Konrad, Piechota, Jacek, Kangawa, Yoshihiro, Grzegory, Izabella, Leszczynski, Michal, Zytkiewicz, Zbigniew R., Muziol, Grzegorz, Monroy, Eva, Kaminska, Agata, Krukowski, Stanislaw

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Foundations of ab initio simulations of electric charges and fields at semiconductor surfaces within slab models von Krukowski, Stanislaw, Kempisty, Pawel, Strak, Pawel

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Defect-related photoluminescence and photoluminescence excitation as a method to study the excitonic bandgap of AlN epitaxial layers: Experimental and ab initio analysis von Kaminska, Agata, Koronski, Kamil, Strak, Pawel, Wierzbicka, Aleksandra, Sobanska, Marta, Klosek, Kamil, Nechaev, Dmitrii V., Pankratov, Vladimir, Chernenko, Kirill, Krukowski, Stanislaw, Zytkiewicz, Zbigniew R.

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Electronic charge transfer contribution in adsorption of silicon at the SiC(0001) surface—A density functional theory (DFT) study von Sołtys, Jakub, Piechota, Jacek, Strak, Paweł, Krukowski, Stanisław

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Thermodynamics of GaN(s)-NH 3 (v)+N 2 (v)+H 2 (v) system – Electronic aspects of the processes at GaN(0001) surface von Kempisty, Pawel, Strak, Pawel, Sakowski, Konrad, Krukowski, Stanislaw

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