Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon von Thompson, Michael D, Alhodaib, Aiyeshah, Craig, Adam P, Robson, Alex, Aziz, Atif, Krier, Anthony, Svensson, Johannes, Wernersson, Lars-Erik, Sanchez, Ana M, Marshall, Andrew R. J

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ZnO-based Thin Film Transistors Employing Aluminum Titanate Gate Dielectrics Deposited by Spray Pyrolysis at Ambient Air von Afouxenidis, Dimitrios, Mazzocco, Riccardo, Vourlias, Georgios, Livesley, Peter J, Krier, Anthony, Milne, William I, Kolosov, Oleg, Adamopoulos, George

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Characterization of Below-Bandgap Absorption in Type II GaSb Quantum Dots in GaAs Solar Cells von James, Juanita Saroj, Fujita, Hiromi, Carrington, Peter J., Marshall, Andrew R. J., Krier, Susan, Krier, Anthony

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Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon von Delli, Evangelia, Hodgson, Peter D., Repiso, Eva, Craig, Adam P., Hayton, Jonathan P., Lu, Qi, Marshall, Andrew R. J., Krier, Anthony, Carrington, Peter J.

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Open-circuit voltage recovery in type II GaSb/GaAs quantum ring solar cells under high concentration von Fujita, Hiromi, Carrington, Peter J., Wagener, Magnus C., Botha, Johannes R., Marshall, Andrew R. J., James, Juanita, Krier, Anthony, Lee, Kan-Hua, Ekins-Daukes, Nicholas John

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Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers von Lu, Qi, Zhuang, Qiandong, Krier, Anthony

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Metamorphic Integration of GaInAsSb Material on GaAs Substrates for Light Emitting Device Applications von Lu, Qi, Marshall, Andrew, Krier, Anthony

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InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000°C von Lu, Qi, Zhou, Xinxin, Krysa, Andrey, Marshall, Andrew, Carrington, Peter, Tan, Chee-Hing, Krier, Anthony

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InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall-plug efficiency von Zhou, Yi, Lu, Qi, Chai, Xuliang, Xu, Zhicheng, Chen, Jianxin, Krier, Anthony, He, Li

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Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer von Lu, Qi, Beanland, Richard, Montesdeoca, Denise, Carrington, Peter J., Marshall, Andrew, Krier, Anthony

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Characterisation of Ga1-xInxSb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer von Jonathan P. Hayton, Andrew R.J. Marshall, Michael D. Thompson, Anthony Krier

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Resonant cavity enhanced InAs/GaAsSb SLS LEDs with a narrow spectral linewidth and a high-spectral intensity operating at 4.6 μm von Al-Saymari, Furat A., Craig, Adam P., Lu, Qi, Hanks, Laura A., Marshall, Andrew R. J., Krier, Anthony

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Electronic Structure and Optical Properties of Strained Type-II InAsxSb1-x/InAs Quantum Dots for Mid-Infrared Applications von Rybchenko, Sergey, Krier, Anthony, Haywood, Stephanie, Yeap, Gik Hong, Carrington, Peter, Itskevich, Igor

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Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells von Tang, Liangliang, Xu, Chang, Liu, Zhuming, Lu, Qi, Marshall, Andrew, Krier, Anthony

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Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO2 detection von Al-Saymari, Furat A., Craig, Adam P., Noori, Yasir J., Lu, Qi, Marshall, Andrew R. J., Krier, Anthony

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Resonant Cavity–Enhanced Photodiodes for Spectroscopy of CH Bonds von Bainbridge, Andrew, Craig, Adam P., Al-Saymari, Furat, Krier, Anthony, Marshall, Andrew R. J.

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Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon von Delli, Evangelia, Letka, Veronica, Hodgson, Peter D, Repiso, Eva, Hayton, Jonathan P, Craig, Adam P, Lu, Qi, Beanland, Richard, Krier, Anthony, Marshall, Andrew R. J, Carrington, Peter J

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Optical properties of metamorphic type-I InAs1−xSbx/Aly In1−y As quantum wells grown on GaAs for the mid-infrared spectral range von Repiso, Eva, Broderick, Christopher A, de la Mata, Maria, Arkani, Reza, Lu, Qi, Marshall, Andrew R J, Molina, Sergio I, O'Reilly, Eoin P, Carrington, Peter J, Krier, Anthony

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Optical properties of metamorphic type-I InAs 1−x Sb x /Al y  In 1−y  As quantum wells grown on GaAs for the mid-infrared spectral range von Repiso, Eva, Broderick, Christopher A, de la Mata, Maria, Arkani, Reza, Lu, Qi, Marshall, Andrew R J, Molina, Sergio I, O’Reilly, Eoin P, Carrington, Peter J, Krier, Anthony

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Mid-infrared resonant cavity light emitting diodes operating at 4.5 µm von Al-Saymari, Furat A., Craig, Adam P., Lu, Qi, Marshall, Andrew R. J., Carrington, Peter J., Krier, Anthony

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