Review of radiation effects on ReRAM devices and technology von Gonzalez-Velo, Yago, Barnaby, Hugh J, Kozicki, Michael N

Volltext

Information in electrodeposited dendrites von Kozicki, Michael N.

Volltext

Electrochemical metallization memories—fundamentals, applications, prospects von Valov, Ilia, Waser, Rainer, Jameson, John R, Kozicki, Michael N

Volltext

Mass transport in chalcogenide electrolyte films – materials and applications von Kozicki, Michael N., Mitkova, Maria

Volltext

Cation-based resistance change memory von Valov, Ilia, Kozicki, Michael N

Volltext

Power and Energy Perspectives of Nonvolatile Memory Technologies von Derhacobian, Narbeh, Hollmer, Shane C., Gilbert, Nad, Kozicki, Michael N.

Volltext

Conductive bridging random access memory-materials, devices and applications von Kozicki, Michael N, Barnaby, Hugh J

Volltext

Gamma radiation induced effects in floppy and rigid Ge-containing chalcogenide thin films von Ailavajhala, Mahesh S., Gonzalez-Velo, Yago, Poweleit, Christian, Barnaby, Hugh, Kozicki, Michael N., Holbert, Keith, Butt, Darryl P., Mitkova, Maria

Volltext

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory von Russo, U., Kamalanathan, D., Ielmini, D., Lacaita, A.L., Kozicki, M.N.

Volltext

Bipolar and unipolar resistive switching in cu-doped SiO2 von SCHINDLER, Christina, PUTHEN THERMADAM, Sarath Chandran, WASER, Rainer, KOZICKI, Michael N

Volltext

A CMOS-compatible electronic synapse device based on Cu SiO2 W programmable metallization cells von Chen, Wenhao, Fang, Runchen, Balaban, Mehmet B, Yu, Weijie, Gonzalez-Velo, Yago, Barnaby, Hugh J, Kozicki, Michael N

Volltext

SiO2 based conductive bridging random access memory von Chen, Wenhao, Tappertzhofen, Stefan, Barnaby, Hugh J., Kozicki, Michael N.

Volltext

Nanoscale memory elements based on solid-state electrolytes von Kozicki, M.N., Mira Park, Mitkova, M.

Volltext

Metasurface‐Based Mueller Matrix Microscope von Zuo, Jiawei, Babu, Ashutosh Bangalore Aravinda, Tian, Mo, Wang, Dongyao, Cen, Zengyu, Chidambaranathan, Kolappan, Bai, Jing, Choi, Shinhyuk, Faruque, Hossain Mansur Resalat, Swain, Smitha S., Kozicki, Michael N., Wang, Chao, Yao, Yu

Volltext

Total Ionizing Dose Retention Capability of Conductive Bridging Random Access Memory von Gonzalez-Velo, Yago, Barnaby, Hugh J., Kozicki, Michael N., Gopalan, Chakravarthy, Holbert, Keith

Volltext

A Low-Power Nonvolatile Switching Element Based on Copper-Tungsten Oxide Solid Electrolyte von Kozicki, M.N., Gopalan, C., Balakrishnan, M., Mitkova, M.

Volltext

Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory von Fang, Runchen, Gonzalez Velo, Yago, Chen, Wenhao, Holbert, Keith E., Kozicki, Michael N., Barnaby, Hugh, Yu, Shimeng

Volltext

Impact of radiation induced crystallization on programmable metallization cell electrical characteristics and reliability von Gonzalez-Velo, Yago, Patadia, Arshey, Barnaby, Hugh J, Kozicki, Michael N

Volltext

Electrochemical metallization memories—fundamentals, applications, prospects von Valov, Ilia, Waser, Rainer, Jameson, John R, Kozicki, Michael N

Volltext

Voltage-Driven On-Off Transition and Tradeoff With Program and Erase Current in Programmable Metallization Cell (PMC) Memory von Kamalanathan, D., Russo, U., Ielmini, D., Kozicki, M.N.

Volltext