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MOSFETs on InP Substrate with LaAlO3/HfO2 Bilayer of Different LaAlO3 Thickness and Single LaXAl1-XO Layer with Different La Doping Level von Wang, Yanzhen, Chen, Yen-Ting, Xue, Fei, Zhou, Fei, Chang, Yao-Feng, Lee, Jack C.

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The role of implantation-induced point defects for the redistribution of oxygen in silicon at high-temperature processing von Kögler, R., Ou, X., Skorupa, W., Möller, W.

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Alternating layers of vacancy-type and interstitial-type defects in Ge ion implanted silicon von Kögler, R., Peeva, A., Mücklich, A., Eichhorn, F., Skorupa, W.

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Teaching to learn in the workplace von Rowland-Jones, Rhys

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