Preferred orientations in polycrystalline SnO2 films grown by atmospheric pressure chemical vapor deposition von KOROTKOV, R. Y, RICOU, P, FARRAN, A. J. E

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Fluorination of polymethylmethacrylate with SF6 and hexafluoropropylene using dielectric barrier discharge system at atmospheric pressure von KOROTKOV, R. Y, GOFF, T, RICOU, P

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Optical properties of the deep Mn acceptor in GaN:Mn von Korotkov, R. Y., Gregie, J. M., Wessels, B. W.

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Thin polycrystalline zinc oxide films obtained by oxidation of metallic zinc films von Alivov, Ya.I., Chernykh, A.V., Chukichev, M.V., Korotkov, R.Y.

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Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films von Reshchikov, M. A., Korotkov, R. Y.

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Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers von Reshchikov, M. A., Shahedipour, F., Korotkov, R. Y., Wessels, B. W., Ulmer, M. P.

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Atmospheric plasma discharge chemical vapor deposition of SnOx thin films using various tin precursors von KOROTKOV, R. Y, GUPTA, R, RICOU, P, SMITH, R, SILVERMAN, G

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Electrical properties of p -type GaN:Mg codoped with oxygen von Korotkov, R. Y., Gregie, J. M., Wessels, B. W.

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Optical properties of Mn4+ ions in GaN:Mn codoped with Mg acceptors von Han, B., Korotkov, R. Y., Wessels, B. W., Ulmer, M. P.

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Transport properties of undoped and NH3-doped polycrystalline SnO2 with low background electron concentrations von Korotkov, R. Y., Farran, A. J. E., Culp, T., Russo, D., Roger, C.

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Response to “Comment on ‘Modeling of the electron mobility in GaN materials’” [J. Appl. Phys. 99, 036106 (2006)] von Abdel-Motaleb, Ibrahim M., Korotkov, R. Y.

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Mn-related absorption and PL bands in GaN grown by metal organic vapor phase epitaxy von Korotkov, R.Y., Gregie, J.M., Wessels, B.W.

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Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy von Korotkov, R.Y, Reshchikov, M.A, Wessels, B.W

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Deep acceptors in undoped GaN von Reshchikov, M.A., Shahedipour, F., Korotkov, R.Y., Ulmer, M.P., Wessels, B.W.

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Optical study of GaN : Mn co-doped with Mg grown by metal organic vapor phase epitaxy von Korotkov, R.Y., Gregie, J.M., Han, B., Wessels, B.W.

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Investigation of the defect structure of GaN heavily doped with oxygen von Korotkov, R.Y., Niu, F., Gregie, J.M., Wessels, B.W.

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Acceptors in undoped GaN studied by transient photoluminescence von Korotkov, R.Y, Reshchikov, M.A, Wessels, B.W

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Modeling of electron mobility in GaN materials von Abdel-Motaleb, Ibrahim M., Korotkov, Roman Y.

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Observation of backward sum-frequency generation in periodically-poled lithium niobate von Gu, Xinhua, Korotkov, Roman Y., Ding, Yujie J., Kang, Jin U., Khurgin, Jacob B.

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Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy von Korotkov, R.Y., Wessels, B.W.

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