High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure 28Si12C, Natural and 13C – Enriched 4H-SiC von Ager, Joel W., Kordina, Olle, Son, Nguyen Tien, Ivanov, Ivan G., Yazdanfar, Milan, Lundqvist, Bjorn, Janzén, Erik, Liljedahl, Rickard, Hassan, Jawad, Chen, J.T., Stenberg, Pontus

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Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications von Pedersen, Henrik, Leone, Stefano, Kordina, Olof, Henry, Anne, Nishizawa, Shin-ichi, Koshka, Yaroslav, Janzén, Erik

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Growth Mechanism of SiC Chemical Vapor Deposition: Adsorption and Surface Reactions of Active Si Species von Sukkaew, Pitsiri, Kalered, Emil, Janzén, Erik, Kordina, Olof, Danielsson, Örjan, Ojamäe, Lars

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Ab Initio Study of Growth Mechanism of 4H–SiC: Adsorption and Surface Reaction of C2H2, C2H4, CH4, and CH3 von Sukkaew, Pitsiri, Danielsson, Örjan, Kordina, Olof, Janzén, Erik, Ojamäe, Lars

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Vector Magnetometry Using Silicon Vacancies in 4H-SiC Under Ambient Conditions von Niethammer, Matthias, Widmann, Matthias, Lee, Sang-Yun, Stenberg, Pontus, Kordina, Olle, Ohshima, Takeshi, Nguyen, Son Tien, Janzén, Erik, Wrachtrup, Joerg

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N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality von Zhang, Hengfang, Paskov, Plamen P., Kordina, Olof, Chen, Jr-Tai, Darakchieva, Vanya

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Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates von Yazdanfar, M., Ivanov, I. G., Pedersen, H., Kordina, O., Janzén, E.

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Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy von Duc, Tran Thien, Pozina, Galia, Son, Nguyen Tien, Kordina, Olof, Janzén, Erik, Ohshima, Takeshi, Hemmingsson, Carl

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Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates von Leone, S., Pedersen, H., Henry, A., Kordina, O., Janzén, E.

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On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide von Yazdanfar, M., Pedersen, H., Sukkaew, P., Ivanov, I.G., Danielsson, Ö., Kordina, O., Janzén, E.

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Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide von Leone, Stefano, Kordina, Olof, Henry, Anne, Nishizawa, Shin-ichi, Danielsson, Örjan, Janzén, Erik

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Thick homoepitaxial layers grown on on-axis Si-face 6H- and 4H-SiC substrates with HCl addition von Leone, S., Pedersen, H., Henry, A., Kordina, O., Janzén, E.

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Process stability and morphology optimization of very thick 4H–SiC epitaxial layers grown by chloride-based CVD von Yazdanfar, M., Stenberg, P., Booker, I.D., Ivanov, I.G., Kordina, O., Pedersen, H., Janzén, E.

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Brominated Chemistry for Chemical Vapor Deposition of Electronic Grade SiC von Yazdanfar, Milan, Danielsson, Örjan, Kalered, Emil, Sukkaew, Pitsiri, Kordina, Olle, Nilsson, Daniel, Ivanov, Ivan G, Ojamäe, Lars, Janzén, Erik, Pedersen, Henrik

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Simulations of SiC CVD - Perspectives on the Need for Surface Reaction Model Improvements von Kordina, Olof, Janzén, Erik, Danielsson, Örjan

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Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC von Tien Son, Nguyen, Thang Trinh, Xuan, Gällström, Andreas, Leone, Stefano, Kordina, Olof, Janzén, Erik, Szász, Krisztián, Ivády, Viktor, Gali, Adam

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SiC epitaxy growth using chloride-based CVD von Henry, Anne, Leone, Stefano, Beyer, Franziska C., Pedersen, Henrik, Kordina, Olof, Andersson, Sven, Janzén, Erik

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Thermochemical Properties of Halides and Halohydrides of Silicon and Carbon von Sukkaew, Pitsiri, Ojamäe, Lars, Kordina, Olof, Janzén, Erik, Danielsson, Örjan

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Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions von Kordina, Olof, Yazdanfar, Milan, Leone, Stefano, Pedersen, Henrik, Henry, Anne, Janzén, Erik

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Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC von Sukkaew, Pitsiri, Kordina, Olof, Janzén, Erik, Yazdanfar, Milan, Danielsson, Örjan

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