Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers von Kirstaedter, N., Schmidt, O. G., Ledentsov, N. N., Bimberg, D., Ustinov, V. M., Egorov, A. Yu, Zhukov, A. E., Maximov, M. V., Kop’ev, P. S., Alferov, Zh. I.

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Radiative versus non-radiative recombination in high-efficiency mid-IR InSb/InAs/In(Ga,Al)As/GaAs metamorphic nanoheterostructures von Komkov, O S, Firsov, D D, Chernov, M Yu, Solov'ev, V A, Sitnikova, A A, Kop'ev, P S, Ivanov, S V

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Temperature-dependent photoluminescence of InSb/InAs nanostructures with InSb thickness in the above-monolayer range von Firsov, D D, Komkov, O S, Solov'ev, V A, Kop'ev, P S, Ivanov, S V

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Large blue shift of electroluminescence spectrum in nanoheterostructures with a deep AlSb/InAsSb/AlSb quantum well von Mikhailova, M. P., Ivanov, E. V., Danilov, L. V., Kalinina, K. V., Pivovarova, A. A., Yakovlev, Yu. P., Kop’ev, P. S.

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Tunable laser spectroscopy of spin injection in ZnMnSe/ZnCdSe quantum structures von Buyanova, I. A., Ivanov, I. G., Monemar, B., Chen, W. M., Toropov, A. A., Terent’ev, Ya. V., Sorokin, S. V., Lebedev, A. V., Ivanov, S. V., Kop’ev, P. S.

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Electroluminescence in Heterostructures GaSb/AlSb/InAsSb Due to Tunneling Mechanism of Radiative Recombination von Danilov, L. V., Mikhailova, M. P., Ivanov, E. V., Yakovlev, Yu. P., Kop’ev, P. S.

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High-Power Laser Diodes Based on InGaAs(P)/Al(In)GaAs(P)/GaAs Heterostructures with Low Internal Optical Loss von Slipchenko, S. O., Veselov, D. A., Zolotarev, V. V., Lyutetskii, A. V., Podoskin, A. A., Sokolova, Z. N., Shamakhov, V. V., Shashkin, I. S., Kop’ev, P. S., Pikhtin, N. A.

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Mie resonances, infrared emission, and the band gap of InN von Shubina, T V, Ivanov, S V, Jmerik, V N, Solnyshkov, D D, Vekshin, V A, Kop'ev, P S, Vasson, A, Leymarie, J, Kavokin, A, Amano, H, Shimono, K, Kasic, A, Monemar, B

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High-Power Multimode Laser Diodes (λ = 976 nm) Based on Asymmetric Heterostructures with a Broadened Waveguide and Reduced Vertical Divergence von Slipchenko, S. O., Podoskin, A. A., Nikolaev, D. N., Shamakhov, V. V., Shashkin, I. S., Kondratov, M. I., Gordeev, I. N., Grishin, A. E., Kazakova, A. E., Gavrina, P. S., Bakhvalov, K. V., Kop’ev, P. S., Pikhtin, N. A.

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Light-current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures von Gavrina, P S, Podoskin, A A, Fomin, E V, Veselov, D A, Shamakhov, V V, Slipchenko, S O, Pikhtin, N A, Kop'ev, P S

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Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring von Jmerik, V.N., Mizerov, A.M., Nechaev, D.V., Aseev, P.A., Sitnikova, A.A., Troshkov, S.I., Kop'ev, P.S., Ivanov, S.V.

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Radiative Recombination and Impact Ionization in Semiconductor Nanostructures (a Review) von Mikhailova, M. P., Ivanov, E. V., Danilov, L. V., Kalinina, K. V., Yakovlev, Yu. P., Kop’ev, P. S.

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InAs/GaAs quantum dots radiative recombination from zero-dimensional states von Grundmann, M., Ledentsov, N. N., Heitz, R., Eckey, L., Christen, J., Böhrer, J., Bimberg, D., Ruvimov, S. S., Werner, P., Richter, U., Heydenreich, J., Ustinov, V. M., Egorov, A. Yu, Zhukov, A. E., Kopev, P. S., Alferov, Zh. I.

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High-Power CW InGaAs/AlGaAs (1070 nm) Lasers with a Broadened Lateral Waveguide of the Mesa-Stripe Design von Shashkin, I. S., Leshko, A. Yu, Shamakhov, V. V., Voronkova, N. V., Kapitonov, V. A., Bakhvalov, K. V., Slipchenko, S. O., Pikhtin, N. A., Kop’ev, P. S.

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Light Characteristics of Narrow-Stripe High-Power Semiconductor Lasers (1060 nm) Based on Asymmetric AlGaAs/GaAs Heterostructures with a Broad Waveguide von Shashkin, I. S., Leshko, A. Y., Nikolaev, D. N., Shamakhov, V. V., Rudova, N. A., Bakhvalov, K. V., Lutetskiy, A. V., Kapitonov, V. A., Zolotarev, V. V., Slipchenko, S. O., Pikhtin, N. A., Kop’ev, P. S.

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Output Optical Power Dynamics of Semiconductor Lasers (1070 nm) with a Few-Mode Lateral Waveguide of Mesa-Stripe Design at Ultrahigh Drive Currents von Shashkin, I. S., Leshko, A. Yu, Shamakhov, V. V., Romanovich, D. N., Kapitonov, V. A., Bakhvalov, K. V., Slipchenko, S. O., Pikhtin, N. A., Kop’ev, P. S.

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Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix von Ledentsov, N. N., Krestnikov, I. L., Maximov, M. V., Ivanov, S. V., Sorokin, S. L., Kop’ev, P. S., Alferov, Zh. I., Bimberg, D., Sotomayor Torres, C. M.

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Spontaneous ordering of arrays of coherent strained islands von Shchukin, VA, Ledentsov, NN, Kop'ev, PS, Bimberg, D

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Single-Mode Lasers (1050 nm) of Mesa-Stripe Design Based on an AlGaAs/GaAs Heterostructure with an Ultra-Narrow Waveguide von Shashkin, I. S., Leshko, A. Y., Nikolaev, D. N., Shamakhov, V. V., Veselov, D. A., Rudova, N. A., Bakhvalov, K. V., Zolotarev, V. V., Slipchenko, S. O., Pikhtin, N. A., Kop’ev, P. S.

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InAs-GaAs quantum dots: From growth to lasers von Bimberg, D., Ledentsov, N. N., Grundmann, M., Kirstaedter, N., Schmidt, O. G., Mao, M. H., Ustinov, V. M., Egorov, A. Yu, Zhukov, A. E., Kopev, P. S., Alferov, Zh. I., Ruvimov, S. S., Gösele, U., Heydenreich, J.

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