Temperature-dependent photoluminescence of InSb/InAs nanostructures with InSb thickness in the above-monolayer range von Firsov, D D, Komkov, O S, Solov'ev, V A, Kop'ev, P S, Ivanov, S V

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Radiative versus non-radiative recombination in high-efficiency mid-IR InSb/InAs/In(Ga,Al)As/GaAs metamorphic nanoheterostructures von Komkov, O S, Firsov, D D, Chernov, M Yu, Solov'ev, V A, Sitnikova, A A, Kop'ev, P S, Ivanov, S V

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Large blue shift of electroluminescence spectrum in nanoheterostructures with a deep AlSb/InAsSb/AlSb quantum well von Mikhailova, M. P., Ivanov, E. V., Danilov, L. V., Kalinina, K. V., Pivovarova, A. A., Yakovlev, Yu. P., Kop’ev, P. S.

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Mie resonances, infrared emission, and the band gap of InN von Shubina, T V, Ivanov, S V, Jmerik, V N, Solnyshkov, D D, Vekshin, V A, Kop'ev, P S, Vasson, A, Leymarie, J, Kavokin, A, Amano, H, Shimono, K, Kasic, A, Monemar, B

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Electroluminescence in Heterostructures GaSb/AlSb/InAsSb Due to Tunneling Mechanism of Radiative Recombination von Danilov, L. V., Mikhailova, M. P., Ivanov, E. V., Yakovlev, Yu. P., Kop’ev, P. S.

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Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring von Jmerik, V.N., Mizerov, A.M., Nechaev, D.V., Aseev, P.A., Sitnikova, A.A., Troshkov, S.I., Kop'ev, P.S., Ivanov, S.V.

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Light-current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures von Gavrina, P S, Podoskin, A A, Fomin, E V, Veselov, D A, Shamakhov, V V, Slipchenko, S O, Pikhtin, N A, Kop'ev, P S

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High-Power Laser Diodes Based on InGaAs(P)/Al(In)GaAs(P)/GaAs Heterostructures with Low Internal Optical Loss von Slipchenko, S. O., Veselov, D. A., Zolotarev, V. V., Lyutetskii, A. V., Podoskin, A. A., Sokolova, Z. N., Shamakhov, V. V., Shashkin, I. S., Kop’ev, P. S., Pikhtin, N. A.

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Radiative Recombination and Impact Ionization in Semiconductor Nanostructures (a Review) von Mikhailova, M. P., Ivanov, E. V., Danilov, L. V., Kalinina, K. V., Yakovlev, Yu. P., Kop’ev, P. S.

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High-Power Multimode Laser Diodes (λ = 976 nm) Based on Asymmetric Heterostructures with a Broadened Waveguide and Reduced Vertical Divergence von Slipchenko, S. O., Podoskin, A. A., Nikolaev, D. N., Shamakhov, V. V., Shashkin, I. S., Kondratov, M. I., Gordeev, I. N., Grishin, A. E., Kazakova, A. E., Gavrina, P. S., Bakhvalov, K. V., Kop’ev, P. S., Pikhtin, N. A.

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High-Power CW InGaAs/AlGaAs (1070 nm) Lasers with a Broadened Lateral Waveguide of the Mesa-Stripe Design von Shashkin, I. S., Leshko, A. Yu, Shamakhov, V. V., Voronkova, N. V., Kapitonov, V. A., Bakhvalov, K. V., Slipchenko, S. O., Pikhtin, N. A., Kop’ev, P. S.

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Light Characteristics of Narrow-Stripe High-Power Semiconductor Lasers (1060 nm) Based on Asymmetric AlGaAs/GaAs Heterostructures with a Broad Waveguide von Shashkin, I. S., Leshko, A. Y., Nikolaev, D. N., Shamakhov, V. V., Rudova, N. A., Bakhvalov, K. V., Lutetskiy, A. V., Kapitonov, V. A., Zolotarev, V. V., Slipchenko, S. O., Pikhtin, N. A., Kop’ev, P. S.

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Output Optical Power Dynamics of Semiconductor Lasers (1070 nm) with a Few-Mode Lateral Waveguide of Mesa-Stripe Design at Ultrahigh Drive Currents von Shashkin, I. S., Leshko, A. Yu, Shamakhov, V. V., Romanovich, D. N., Kapitonov, V. A., Bakhvalov, K. V., Slipchenko, S. O., Pikhtin, N. A., Kop’ev, P. S.

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Spontaneous ordering of arrays of coherent strained islands von Shchukin, VA, Ledentsov, NN, Kop'ev, PS, Bimberg, D

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Single-Mode Lasers (1050 nm) of Mesa-Stripe Design Based on an AlGaAs/GaAs Heterostructure with an Ultra-Narrow Waveguide von Shashkin, I. S., Leshko, A. Y., Nikolaev, D. N., Shamakhov, V. V., Veselov, D. A., Rudova, N. A., Bakhvalov, K. V., Zolotarev, V. V., Slipchenko, S. O., Pikhtin, N. A., Kop’ev, P. S.

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Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy von Mizerov, A.M., Jmerik, V.N., Yagovkina, M.A., Troshkov, S.I., Kop'ev, P.S., Ivanov, S.V.

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InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm von Ustinov, V. M., Maleev, N. A., Zhukov, A. E., Kovsh, A. R., Egorov, A. Yu, Lunev, A. V., Volovik, B. V., Krestnikov, I. L., Musikhin, Yu. G., Bert, N. A., Kop’ev, P. S., Alferov, Zh. I., Ledentsov, N. N., Bimberg, D.

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Resonance energy transfer in a dense array of II–VI quantum dots von Shubina, T. V., Belyaev, K. G., Semina, M. A., Rodina, A. V., Golovatenko, A. A., Toropov, A. A., Sorokin, S. V., Sedova, I. V., Davydov, V. Yu, Smirnov, A. N., Kop’ev, P. S., Ivanov, S. V.

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Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth von Ledentsov, NN, Shchukin, VA, Grundmann, M, Kirstaedter, N, Böhrer, J, Schmidt, O, Bimberg, D, Ustinov, VM, Egorov, AY, Zhukov, AE, Kop'ev, PS, Zaitsev, SV, Gordeev, NY, Alferov, ZI, Borovkov, AI, Kosogov, AO, Ruvimov, SS, Werner, P, Gösele, U, Heydenreich, J

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Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots von Heitz, R., Grundmann, M., Ledentsov, N. N., Eckey, L., Veit, M., Bimberg, D., Ustinov, V. M., Egorov, A. Yu, Zhukov, A. E., Kop’ev, P. S., Alferov, Zh. I.

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