Homo-epitaxial growth of n-GaN layers free from carbon-induced mobility collapse and off-angle-dependent doping variation by quartz-free hydride vapor phase epitaxy von Fujikura, Hajime, Konno, Taichiro, Kimura, Takeshi, Narita, Yoshinobu, Horikiri, Fumimasa

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Substantial and simultaneous reduction of major electron traps and residual carbon in homoepitaxial GaN layers von Kimura, Takeshi, Konno, Taichiro, Fujikura, Hajime

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Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy von Kanegae, Kazutaka, Fujikura, Hajime, Otoki, Yohei, Konno, Taichiro, Yoshida, Takehiro, Horita, Masahiro, Kimoto, Tsunenobu, Suda, Jun

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Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse von Kaneki, Shota, Konno, Taichiro, Kimura, Takeshi, Kanegae, Kazutaka, Suda, Jun, Fujikura, Hajime

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Fabrication of free-standing GaN substrates using electrochemically formed porous separation layers von Yokoyama, Masafumi, Horikiri, Fumimasa, Mori, Hisashi, Konno, Taichiro, Fujikura, Hajime

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Growth of InGaN films on hardness-controlled bulk GaN substrates von Sumiya, Masatomo, Fukuda, Kiyotaka, Fujikura, Hajime, Konno, Taichiro, Suzuki, Takayuki, Fujimoto, Tetsuji, Yoshida, Takehiro, Ueda, Shigenori, Watanabe, Kenji, Ohnishi, Tsuyoshi, Honda, Tohru

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Elimination of macrostep-induced current flow nonuniformity in vertical GaN PN diode using carbon-free drift layer grown by hydride vapor phase epitaxy von Fujikura, Hajime, Hayashi, Kentaro, Horikiri, Fumimasa, Narita, Yoshinobu, Konno, Taichiro, Yoshida, Takehiro, Ohta, Hiroshi, Mishima, Tomoyoshi

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Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application von Sumiya, Masatomo, Goto, Osamu, Takahara, Yuki, Imanaka, Yasutaka, Sang, Liwen, Fukuhara, Noboru, Konno, Taichiro, Horikiri, Fumimasa, Kimura, Takeshi, Uedono, Akira, Fujikura, Hajime

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Roughening of GaN homoepitaxial surfaces due to step meandering and bunching instabilities and their suppression in hydride vapor phase epitaxy von Fujikura, Hajime, Konno, Taichiro

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Roughening of GaN homoepitaxial surfaces due to step meandering and bunchinginstabilities and their suppression in hydride vapor phase epitaxy von Fujikura Hajime, Konno Taichiro

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Fabrication of large flat gallium nitride templates with extremely low dislocation densities in the 106cm−2 range by novel two-side hydride vapor-phase epitaxial growth von Fujikura, Hajime, Konno, Taichiro

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Fabrication of large flat gallium nitride templates with extremely low dislocation densities in the 106 cm-2 range by novel two-side hydride vapor-phase epitaxial growth von Fujikura, Hajime, Konno, Taichiro

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Hydride vapor phase epitaxial growth of AlGaN von Fujikura, Hajime, Konno, Taichiro, Kimura, Takeshi

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Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates von Fujikura, Hajime, Konno, Taichiro, Yoshida, Takehiro, Horikiri, Fumimasa

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AlN nanostructures and flat, void-less AlN templates formed by hydride vapor phase epitaxy on patterned sapphire substrates von Fujikura, Hajime, Konno, Taichiro, Kimura, Takeshi, Miyake, Hideto

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Macrodefect-free, large, and thick GaN bulk crystals for high-quality 2-6 in. GaN substrates by hydride vapor phase epitaxy with hardness control von Fujikura, Hajime, Konno, Taichiro, Suzuki, Takayuki, Kitamura, Toshio, Fujimoto, Tetsuji, Yoshida, Takehiro

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Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates von Fujikura, Hajime, Konno, Taichiro, Yoshida, Takehiro, Horikiri, Fumimasa

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Nitride semiconductor template, method for manufacturing nitride semiconductor template, and method for manufacturing nitride semiconductor free-standing substrate von Fujikura, Hajime, Konno, Taichiro

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Improvement of surface flatness of HVPE-grown homo-epitaxial GaN layers von Fujikura, Hajime, Konno, Taichiro

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HVPE-growth of AlN layers on patterned sapphire substrates von Fujikura, Hajime, Konno, Taichiro, Kimura, Takeshi, Miyake, Hideto

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