Initial Stages of Growth of Semipolar AlN on a Nanopatterned Si(100) Substrate von Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S. N.

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Morphology of the Surface of Semipolar GaN Layers during Epitaxy on a Nano-Patterned Si Substrate von Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S. N., Solomnikova, A. V.

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Formation of Semipolar Group-III-Nitride Layers on Textured Si(100) Substrates with Self-Forming Nanomask von Bessolov, V. N., Konenkova, E. V., Rodin, S. N., Kibalov, D. S., Smirnov, V. K.

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Properties of Semipolar GaN Grown on a Si(100) Substrate von Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S. N., Seredova, N. V., Solomnikova, A. V., Shcheglov, M. P., Kibalov, D. S., Smirnov, V. K.

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Synthesis of Hexagonal AlN and GaN Layers on a Si(100) Substrate by Chloride Vapor-Phase Epitaxy von Bessolov, V. N., Gushchina, E. V., Konenkova, E. V., Konenkov, S. D., L’vova, T. V., Panteleev, V. N., Shcheglov, M. P.

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Semipolar Wide-Band III–N-Layers on a Silicon Substrate: Orientation Controlling Epitaxy and the Properties of Structures (Review) von Bessolov, V. N., Konenkova, E. V.

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Initial Stages of Growth of the GaN(112) Layer on a Nano-structured Si(113) Substrate von Bessolov, V. N., Konenkova, E. V., Rodin, S. N.

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Surface Morphology of AlN Layers Grown on a Nano-Structured SiNx/Si(100) Template von Bessolov, V. N., Konenkova, E. V., Rodin, S. N., Solomnikova, A. V.

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Anisotropic Stresses in GaN(11‒20) Layers on an r-Al2O3 Substrate during Hydride Vapor Phase Epitaxy von Bessolov, V. N., Konenkova, E. V., Seredova, N. V., Panteleev, V. N., Scheglov, M. E.

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Semipolar III-N Layers Deposited on a Nanostructured Silicon Substrate: Process and Luminescence Specificity von Bessolov, V. N., Konenkova, E. V., Konenkov, S. D., Panteleev, V. N.

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Deformation of Semipolar and Polar Gallium Nitride Synthesized on a Silicon Substrate von Bessolov, V. N., Kompan, M. E., Konenkova, E. V., Rodin, S. N.

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Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate von Bessolov, V.N., Karpov, D.V., Konenkova, E.V., Lipovskii, A.А., Osipov, A.V., Redkov, A.V., Soshnikov, I.P., Kukushkin, S.A.

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Hydride Vapor-Phase Epitaxy of a Semipolar AlN(102) Layer on a Nanostructured Si(100) Substrate von Bessolov, V. N., Kompan, M. E., Konenkova, E. V., Panteleev, V. N.

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Epitaxy of GaN(0001) and GaN(101) Layers on Si(100) Substrate von Bessolov, V. N., Kompan, M. E., Konenkova, E. V., Panteleev, V. N., Rodin, S. N., Shcheglov, M. P.

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Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates von Kukushkin, S. A., Osipov, A. V., Bessolov, V. N., Konenkova, E. V., Panteleev, V. N.

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Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate von Bessolov, V. N., Gushchina, E. V., Konenkova, E. V., L’vova, T. V., Panteleev, V. N., Shcheglov, M. P.

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Vapor-Phase Epitaxy of AlN Layers on AlN/Si(111) Templates Synthesized by Reactive Magnetron Sputtering von Bessolov, V. N., Gruzinov, N. D., Kompan, M. E., Konenkova, E. V., Panteleev, V. N., Rodin, S. N., Shcheglov, M. P.

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Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate von Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S. N., Shcheglov, M. P., Kibalov, D. S., Smirnov, V. K.

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Raman scattering from LO–phonon–plasmon coupled modes in Ag-coated GaN nanocrystals von Bessolov, V.N., Konenkova, E.V., Zhilyaev, Yu.V., Paez Sierra, B.A., Zahn, D.R.T.

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Initial Stages of Growth of the GaN Substrate von Bessolov, V. N, Konenkova, E. V, Rodin, S. N

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