Electrical transport properties of highly doped N-type GaN materials von Konczewicz, L, Litwin-Staszewska, E, Zajac, M, Turski, H, Bockowski, M, Schiavon, D, Chlipała, M, Iwinska, M, Nita, P, Juillaguet, S, Contreras, S

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Pressure-induced penetration of guest molecules in high-silica zeolites: the case of mordenite von Arletti, R, Leardini, L, Vezzalini, G, Quartieri, S, Gigli, L, Santoro, M, Haines, J, Rouquette, J, Konczewicz, L

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Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configuration von Grzegory, I., Boćkowski, M., łucznik, B., Weyher, J., Litwin-Staszewska, E., Konczewicz, L., Sadovyi, B., Nowakowski, P., Porowski, S.

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High Temperature Annealing of MBE-grown Mg-doped GaN von Contreras, S, Konczewicz, L, Peyre, H, Juillaguet, S, Khalfioui, M Al, Matta, S, Leroux, M, Damilano, B, Brault, J

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Optical investigations and strain effect in AlGaN/GaN epitaxial layers von Jayasakthi, M., Juillaguet, S., Peyre, H., Konczewicz, L., Moret, M., Briot, O., Baskar, K., Contreras, S.

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Coexistence of free holes and electrons in InN:Mg with In- and N-growth polarities von Dmowski, L. H., Baj, M., Konczewicz, L., Suski, T., Maude, D. K., Grzanka, S., Wang, X. Q., Yoshikawa, A.

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Pressure tuning of the morphotropic phase boundary in piezoelectric lead zirconate titanate von ROUQUETTE, J, HAINES, J, BORNAND, V, PINTARD, M, PAPER, Ph, BOUSQUET, C, KONCZEWICZ, L, GORELLI, F. A, HULL, S

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Advantage of In- over N-polarity for disclosure of p-type conduction in InN:Mg von Dmowski, L. H., Baj, M., Wang, X. Q., Zheng, X. T., Ma, D. Y., Kończewicz, L., Suski, T.

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Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer von Dmowski, L. H., Konczewicz, L., Suski, T., Contreras, S., Lu, H., Schaff, W. J.

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The influence of free-carrier concentration on the PEC etching of GaN: A calibration with Raman spectroscopy von Lewandowska, R., Weyher, J.L., Kelly, J.J., Konczewicz, L., Lucznik, B.

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High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors von Bouguen, L., Konczewicz, L., Contreras, S., Jouault, B., Camassel, J., Cordier, Y.

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p-type conductivity in GaN:Zn monocrystals grown by ammonothermal method von Zajac, M., Konczewicz, L., Litwin-Staszewska, E., Iwinska, M., Kucharski, R., Juillaguet, S., Contreras, S.

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Resonant localized donor state above the conduction band minimum in InN von Dmowski, L. H., Plesiewicz, J. A., Suski, T., Lu, Hai, Schaff, W., Kurouchi, M., Nanishi, Y., Konczewicz, L., Cimalla, V., Ambacher, O.

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Kinetics of low-temperature activation of acceptors in magnesium-doped gallium nitride epilayers grown by metal-organic vapor-phase epitaxy von Litwin-Staszewska, E., Piotrzkowski, R., Dmowski, L., Prystawko, P., Czernecki, R., Konczewicz, L.

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Parallel conduction in p-type gallium nitride homo-structures von Litwin-Staszewska, E, Konczewicz, L, Piotrzkowski, R, Dmowski, L, Czernecki, R, Prystawko, P

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Transport measurements on InAs/GaSb superlattice structures for mid-infrared photodiode von Cervera, C, Perez, J P, Chaghi, R, Rodriguez, J B, Christol, P, Konczewicz, L, Contreras, S

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Investigation of AlGaN∕AlN∕GaN heterostructures for magnetic sensor application from liquid helium temperature to 300°C von Bouguen, L., Contreras, S., Jouault, B., Konczewicz, L., Camassel, J., Cordier, Y., Azize, M., Chenot, S., Baron, N.

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Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing von Litwin-Staszewska, E., Suski, T., Piotrzkowski, R., Grzegory, I., Bockowski, M., Robert, J. L., Kończewicz, L., Wasik, D., Kamińska, E., Cote, D., Clerjaud, B.

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High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials von Konczewicz, L., Juillaguet, S., Litwin-Staszewska, E., Piotrzkowski, R., Peyre, H., Matta, S., Al Khalfioui, M., Leroux, M., Damilano, B., Brault, J., Contreras, S.

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Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization von Cervera, C., Rodriguez, J. B., Perez, J. P., Aït-Kaci, H., Chaghi, R., Konczewicz, L., Contreras, S., Christol, P.

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