Sapphire substrate off-angle and off-direction dependences on characteristics of AlGaN-based deep ultraviolet light-emitting diodes von Kojima, Hisanori, Ogasawara, Takuma, Kim, Myunghee, Saito, Yoshiki, Iida, Kazuyoshi, Koide, Norikatsu, Takeuchi, Tetsuya, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu

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Growth and properties of semi-polar GaN on a patterned silicon substrate von Sawaki, Nobuhiko, Hikosaka, Toshiki, Koide, Norikatsu, Tanaka, Shigeyasu, Honda, Yoshio, Yamaguchi, Masahito

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High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy von Katsuno, Shota, Yasuda, Toshiki, Hagiwara, Koudai, Koide, Norikatsu, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi

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Mg doping in (1 1¯ 0 1)GaN grown on a 7° off-axis (0 0 1)Si substrate by selective MOVPE von Hikosaka, Toshiki, Koide, Norikatsu, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko

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Characteristics of Stacked GaInN‐Based Red, Green, and Blue Full‐Color Monolithic μLED Arrays Connected via Tunnel Junctions von Saito, Tatsunari, Hasegawa, Naoki, Suehiro, Yoshinobu, Koide, Norikatsu, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iida, Daisuke, Ohkawa, Kazuhiro, Iwaya, Motoaki

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Stray light reduction in monolithic GaInN-based μLED arrays for high-definition display realization von Saito, Tatsunari, Imaizumi, Yuta, Kobayashi, Kenta, Suehiro, Yoshinobu, Koide, Norikatsu, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki

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Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors von Ikeyama, Kazuki, Kozuka, Yugo, Matsui, Kenjo, Yoshida, Shotaro, Akagi, Takanobu, Akatsuka, Yasuto, Koide, Norikatsu, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu

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Incorporation of carbon on a ( 1 1 ¯ 0 1 ) facet of GaN by MOVPE von Koide, Norikatsu, Hikosaka, Toshiki, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko

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GaInN-based tunnel junctions with graded layers von Takasuka, Daiki, Akatsuka, Yasuto, Ino, Masataka, Koide, Norikatsu, Takeuchi, Tetsuya, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu

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Carbon Incorporation on (1101) Facet of AlGaN in Metal Organic Vapor Phase Epitaxy von Koide, Norikatsu, Hikosaka, Toshiki, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko

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Dislocation etch pits in GaN epitaxial layers grown on sapphire substrates von KOZAWA, T, KACHI, T, OHWAKI, T, TAGA, Y, KOIDE, N, KOIKE, M

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High quality Al sub(0.99) Ga sub(0.01) N layers on sapphire substrates grown at 1150 [degrees]C by metalorganic vapor phase epitaxy von Katsuno, Shota, Yasuda, Toshiki, Hagiwara, Koudai, Koide, Norikatsu, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi

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High quality Al 0.99 Ga 0.01 N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy von Katsuno, Shota, Yasuda, Toshiki, Hagiwara, Koudai, Koide, Norikatsu, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi

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Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure von Kondo, Hiroyuki, Koide, Norikatsu, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko

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Characterization of the shallow and deep levels in Si doped GaN grown by metal-organic vapor phase epitaxy von HACKE, P, MAEKAWA, A, KOIDE, N, HIRAMATSU, K, SAWAKI, N

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Thermal oxidation of AlInN layer with low temperature by mist particle supply von Matsumoto, Hiroki, Iwayama, Sho, Koide, Norikatsu, Odawara, Mahito, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Maruyama, Takahiro, Akasaki, Isamu

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Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors von Ikeyama, Kazuki, Kozuka, Yugo, Matsui, Kenjo, Yoshida, Shotaro, Akagi, Takanobu, Akatsuka, Yasuto, Koide, Norikatsu, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu

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Thermal oxidation of AlInN by mist particle supply von Matsumoto, Hiroki, Iwayama, Sho, Koide, Norikatsu, Odawara, Mahito, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Maruyama, Takahiro, Akasaki, Isamu

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MOVPE growth of GaN on a misoriented sapphire substrate von Hiramatsu, Kazumasa, Amano, Hiroshi, Akasaki, Isamu, Kato, Hisaki, Koide, Norikatsu, Manabe, Katsuhide

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Mg doping in (11_01)GaN grown on a 7 deg off-axis (001)Si substrate by selective MOVPE von Hikosaka, Toshiki, Koide, Norikatsu, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko

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