Epitaxial GeSn: impact of process conditions on material quality von Loo, Roger, Shimura, Yosuke, Ike, Shinichi, Vohra, Anurag, Stoica, Toma, Stange, Daniela, Buca, Dan, Kohen, David, Margetis, Joe, Tolle, John

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Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process von Lee, Kwang Hong, Bao, Shuyu, Zhang, Li, Kohen, David, Fitzgerald, Eugene, Tan, Chuan Seng

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Metal-Semiconductor-Metal Photodetectors on a GeSn-on-Insulator Platform for 2 µm Applications von Son, Bongkwon, Lin, Yiding, Lee, Kwang Hong, Margetis, Joe, Kohen, David, Tolle, John, Tan, Chuan Seng

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Aluminum catalyzed growth of silicon nanowires: Al atom location and the influence of silicon precursor pressure on the morphology von Kohen, David, Cayron, Cyril, De Vito, Eric, Tileli, Vasiliki, Faucherand, Pascal, Morin, Christine, Brioude, Arnaud, Perraud, Simon

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(Invited) Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration von Porret, Clement, Hikavyy, Andriy Yakovitch, Gomez Granados, Juan Fernando, Baudot, Sylvain, Vohra, Anurag, Kunert, Bernardette, Douhard, Bastien, Bogdanowicz, Janusz, Schaekers, Marc, Kohen, David, Margetis, Joe, Tolle, John, Lima, Lucas, Sammak, Amir, Scappucci, Giordano, Rosseel, Erik, Langer, Robert, Loo, Roger

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The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD – Application to a 200mm GaAs virtual substrate von Kohen, David, Bao, Shuyu, Lee, Kwang Hong, Lee, Kenneth Eng Kian, Tan, Chuan Seng, Yoon, Soon Fatt, Fitzgerald, Eugene A.

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Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer von Kohen, David, Nguyen, Xuan Sang, Yadav, Sachin, Kumar, Annie, Made, Riko I, Heidelberger, Christopher, Gong, Xiao, Lee, Kwang Hong, Lee, Kenneth Eng Kian, Yeo, Yee Chia, Yoon, Soon Fatt, Fitzgerald, Eugene A.

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Electrical Properties of III-V/Oxide Interfaces von Brammertz, Guy, Lin, H.C., Martens, Koen, Alian, Ali-Reza, Merckling, C., Penaud, Julien, Kohen, David, Wang, W.-E, Sioncke, S., Delabie, A., Meuris, Marc, Caymax, Matty R., Heyns, Marc

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Cu2ZnSn(S1−xSex)4 based solar cell produced by selenization of vacuum deposited precursors von Grenet, Louis, Bernardi, Sergio, Kohen, David, Lepoittevin, Christophe, Noël, Sébastien, Karst, Nicolas, Brioude, Arnaud, Perraud, Simon, Mariette, Henri

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Abrupt SiGe-to-Si interface: influence of chemical vapor deposition processes and characterization by different metrology techniques von Kohen, David, D'Costa, Vijay, Bhargava, Nupur, Tolle, John

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Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers von Kohen, David, Vohra, Anurag, Loo, Roger, Vandervorst, Wilfried, Bhargava, Nupur, Margetis, Joe, Tolle, John

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Enhanced B doping in CVD-grown GeSn:B using B d-doping layers von Kohen, David, Vohra, Anurag, Loo, Roger, Vandervorst, Wilfried, Bhargava, Nupur, Margetis, Joe, Tolle, John

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Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for... von Vohra, Anurag, Porret, Clement, Kohen, David, Folkersma, Steven, Bogdanowicz, Janusz, Schaekers, Marc, Tolle, John, Hikavyy, Andriy, Capogreco, Elena, Witters, Liesbeth, Langer, Robert, Vandervorst, Wilfried, Loo, Roger

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Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers von Kohen, David, Nguyen, Xuan Sang, Made, Riko I., Heidelberger, Christopher, Lee, Kwang Hong, Lee, Kenneth Eng Kian, Fitzgerald, Eugene A.

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Fundamentals of Ge1−xSnx and SiyGe1−x-ySnx RPCVD epitaxy von Margetis, Joe, Mosleh, Aboozar, Ghetmiri, Seyed Amir, Al-Kabi, Sattar, Dou, Wei, Du, Wei, Bhargava, Nupur, Yu, Shui-Qing, Profijt, Harald, Kohen, David, Loo, Roger, Vohra, Anurag, Tolle, John

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(Invited) Selective Epitaxial Growth of High-P Si:P for Source/Drain Formation in Advanced Si nFETs von Rosseel, Erik, Dhayalan, Sathish Kumar, Hikavyy, Andriy Yakovitch, Loo, Roger, Profijt, Harald Benjamin, Kohen, David, Kubicek, Stefan, Chiarella, Thomas, Yu, Hao, Horiguchi, Naoto, Mocuta, Dan, Barla, Kathy, Thean, Aaron, Bartlett, Gregory, Margetis, Joe, Bhargava, Nupur, Tolle, John

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Cu2ZnSn(S1−xSex)4 thin films for photovoltaic applications: Influence of the precursor stacking order on the selenization process von Altamura, Giovanni, Grenet, Louis, Bougerol, Catherine, Robin, Eric, Kohen, David, Fournier, Hélène, Brioude, Arnaud, Perraud, Simon, Mariette, Henri

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Epitaxial Growth of Ga-doped SiGe for Reduction of Contact Resistance in finFET Source/Drain Materials von Margetis, Joe, Kohen, David, Porret, Clement, Lima, Lucas, Khazaka, Rami, Rengo, Gianluca, Loo, Roger, Tolle, John, Demos, Alex

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Metalorganic chemical vapor deposition-regrown Ga-rich InGaP films on SiGe virtual substrates for Si-based III-V optoelectronic device applications von Kim, TaeWan, Wang, Bing, Wang, Cong, Kohen, David A., Hwang, Jeong Woo, Shin, Jae Cheol, Kang, Sang-Woo, Michel, Jürgen

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Low temperature epitaxial growth of Ge:B and Ge 0.99 Sn 0.01 :B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need... von Vohra, Anurag, Porret, Clement, Kohen, David, Folkersma, Steven, Bogdanowicz, Janusz, Schaekers, Marc, Tolle, John, Hikavyy, Andriy, Capogreco, Elena, Witters, Liesbeth, Langer, Robert, Vandervorst, Wilfried, Loo, Roger

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