Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation von Yuhao Zhang, Zhihong Liu, Tadjer, Marko J., Min Sun, Piedra, Daniel, Hatem, Christopher, Anderson, Travis J., Luna, Lunet E., Nath, Anindya, Koehler, Andrew D., Okumura, Hironori, Jie Hu, Xu Zhang, Xiang Gao, Feigelson, Boris N., Hobart, Karl D., Palacios, Tomas

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Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation von Anderson, Travis J., Koehler, Andrew D., Greenlee, Jordan D., Weaver, Bradley D., Mastro, Michael A., Hite, Jennifer K., Eddy, Charles R., Kub, Francis J., Hobart, Karl D.

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Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation von Koehler, Andrew D., Nepal, Neeraj, Anderson, Travis J., Tadjer, Marko J., Hobart, Karl D., Eddy, Charles R., Kub, Francis J.

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Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs von Greenlee, Jordan D., Specht, Petra, Anderson, Travis J., Koehler, Andrew D., Weaver, Bradley D., Luysberg, Martina, Dubon, Oscar D., Kub, Francis J., Weatherford, Todd R., Hobart, Karl D.

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Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process von Tadjer, Marko J., Anderson, Travis J., Feygelson, Tatyana I., Hobart, Karl D., Hite, Jennifer K., Koehler, Andrew D., Wheeler, Virginia D., Pate, Bradford B., Eddy Jr, Charles R., Kub, Fritz J.

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Electrical characterization of ALD HfO2 high-k dielectrics on ( 2¯01) β-Ga2O3 von Shahin, David I., Tadjer, Marko J., Wheeler, Virginia D., Koehler, Andrew D., Anderson, Travis J., Eddy, Charles R., Christou, Aris

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Electrothermal Evaluation of AlGaN/GaN Membrane High Electron Mobility Transistors by Transient Thermoreflectance von Tadjer, Marko J., Kub, Fritz J., Raad, Peter E., Komarov, Pavel L., Hobart, Karl D., Feygelson, Tatyana I., Koehler, Andrew D., Anderson, Travis J., Nath, Anindya, Pate, Bradford

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GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging von Tadjer, Marko J., Anderson, Travis J., Ancona, Mario G., Raad, Peter E., Komarov, Pavel, Bai, Tingyu, Gallagher, James C., Koehler, Andrew D., Goorsky, Mark S., Francis, Daniel A., Hobart, Karl D., Kub, Fritz J.

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Hybrid Edge Termination in Vertical GaN: Approximating Beveled Edge Termination via Discrete Implantations von Nelson, Tolen, Pandey, Prakash, Georgiev, Daniel G., Hontz, Michael R., Koehler, Andrew D., Hobart, Karl D., Anderson, Travis J., Ildefonso, Adrian, Khanna, Raghav

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Examination of Trapping Effects on Single-Event Transients in GaN HEMTs von Nelson, Tolen, Georgiev, Daniel G., Hontz, Michael R., Khanna, Raghav, Ildefonso, Adrian, Koehler, Andrew D., Hobart, Karl, Khachatrian, Ani, McMorrow, Dale

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PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates von Spencer, Joseph A., Jacobs, Alan G., Hobart, Karl D., Koehler, Andrew D., Anderson, Travis J., Zhang, Yuhao, Tadjer, Marko J.

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Electrothermal enhancement of β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors via back-end-of-line sputter-deposited AlN layer von Lundh, James Spencer, Cress, Cory, Jacobs, Alan G., Cheng, Zhe, Masten, Hannah N., Spencer, Joseph A., Sasaki, Kohei, Gallagher, James, Koehler, Andrew D., Konishi, Keita, Graham, Samuel, Kuramata, Akito, Anderson, Travis J., Tadjer, Marko J., Hobart, Karl D., Mastro, Michael A.

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Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance von Pandey, Prakash, Nelson, Tolen M., Hontz, Michael R., Georgiev, Daniel G., Khanna, Raghav, Jacobs, Alan G., Lundh, James S., Gallagher, James C., Koehler, Andrew D., Hobart, Karl D., Anderson, Travis J.

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A Simple Edge Termination Design for Vertical GaN P-N Diodes von Pandey, Prakash, Nelson, Tolen M., Collings, William M., Hontz, Michael R., Georgiev, Daniel G., Koehler, Andrew D., Anderson, Travis J., Gallagher, James C., Foster, Geoffrey M., Jacobs, Alan, Ebrish, Mona A., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Khanna, Raghav

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Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability von Lundh, James Spencer, Jacobs, Alan G., Pandey, Prakash, Nelson, Tolen, Georgiev, Daniel G., Koehler, Andrew D., Khanna, Raghav, Tadjer, Marko J., Hobart, Karl D., Anderson, Travis J.

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Effect of Reduced Extended Defect Density in MOCVD Grown AlGaN/GaN HEMTs on Native GaN Substrates von Anderson, Travis J., Tadjer, Marko J., Hite, Jennifer K., Greenlee, Jordan D., Koehler, Andrew D., Hobart, Karl D., Kub, Fritz J.

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High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen von Tadjer, Marko J., Koehler, Andrew D., Freitas, Jaime A., Gallagher, James C., Specht, Matty C., Glaser, Evan R., Hobart, Karl D., Anderson, Travis J., Kub, Fritz J., Thieu, Quang T., Sasaki, Kohei, Wakimoto, Daiki, Goto, Ken, Watanabe, Shinya, Kuramata, Akito

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Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates von Tadjer, Marko J., Waltereit, Patrick, Kirste, Lutz, Müller, Stefan, Lundh, James Spencer, Jacobs, Alan G., Koehler, Andrew D., Komarov, Pavel, Raad, Peter, Gaskins, John, Hopkins, Patrick, Odnoblyudov, Vlad, Basceri, Cem, Anderson, Travis J., Hobart, Karl D.

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Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance von Gallagher, James C., Anderson, Travis J., Koehler, Andrew D., Ebrish, Mona A., Foster, Geoffrey M., Mastro, Michael A., Hite, Jennifer K., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Kub, Francis J.

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Impact of Surface Passivation on the Dynamic ON-Resistance of Proton-Irradiated AlGaN/GaN HEMTs von Koehler, Andrew D., Anderson, Travis J., Tadjer, Marko J., Weaver, Bradley D., Greenlee, Jordan D., Shahin, David I., Hobart, Karl D., Kub, Francis J.

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