Cracking process at lineages in Czochralski-grown 36°-RY LiTaO3 ingots von Ohno, Yutaka, Kajigaya, Tomio, Osako, Kazutaka, Kochiya, Toshio

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Twinning in Czochralski-Grown 36°-RY LiTaO3 Single Crystals von Ohno, Yutaka, Kubouchi, Yuta, Yoshida, Hideto, Kochiya, Toshio, Kajigaya, Tomio

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Determination of angular dependence of lateral growth rate in liquid phase epitaxy of (0 0 1) InP von Oyama, Yutaka, Kochiya, Toshio, Suto, Ken, Nishizawa, Jun-ichi

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Area selective epitaxy of indium phosphide on silicon (100) substrates without buffer layers by liquid phase epitaxy von Kochiya, Toshio, Oyama, Yutaka, Sugai, Maki, Nishizawa, Jun-ichi

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Selective epitaxy of InP on Si(1 0 0) substrates prepared by liquid-phase epitaxy von Sugai, Maki, Kochiya, Toshio, Oyama, Yutaka, Nishizawa, Jun-Ichi

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Dislocation-free large area InP ELO layers by liquid phase epitaxy von Kochiya, Toshio, Oyama, Yutaka, Kimura, Toshihiro, Suto, Ken, Nishizawa, Jun-ichi

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Angular dependence of lateral growth rate and kink-step structure on InP surface during liquid phase epitaxial condition von Oyama, Yutaka, Kochiya, Toshio, Suto, Ken, Nishizawa, Jun-ichi

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Anisotropy of lateral growth rate in liquid phase epitaxy of InP and its association with kink-step structures on the surface von Kochiya, Toshio, Oyama, Yutaka, Suto, Ken, Nishizawa, Jun-ichi

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Area-selective epitaxy and epitaxial lateral overgrowth of InP by liquid phase epitaxy on three integral axes von Oyama, Yutaka, Kochiya, Toshio, Suto, Ken, Nishizawa, Jun-ichi

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SEED CRYSTAL HOLDING JIG, AND CRYSTAL GROWTH APPARATUS USING THE JIG von KOCHIYA TOSHIO

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Anisotropy of lateral growth rate in liquid phase epitaxy of {0 0 1} InP von Kochiya, Toshio, Oyama, Yutaka, Suto, Ken, Nishizawa, Jun-Ichi

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METHOD OF MANUFACTURING SAPPHIRE SINGLE CRYSTAL von KOCHIYA TOSHIO

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Angular dependence of lateral growth rate on the InP (1 1 1)A,B surface by liquid-phase epitaxy von Oyama, Yutaka, Kochiya, Toshio, Suto, Ken, Nishizawa, Jun-Ichi

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SINGLE CRYSTAL GROWTH APPARATUS von HATANAKA HIROSHI, KOCHIYA TOSHIO

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Epitaxial lateral overgrowth of InP by liquid-phase epitaxy on InP (0 0 1), (1 1 1)A,B and (1 1 0) surfaces von Kochiya, Toshio, Oyama, Yutaka, Suto, Ken, Nishizawa, Jun-ichi

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CRYSTAL GROWTH APPARATUS von TERAJIMA AKIRA, KOCHIYA TOSHIO

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CRYSTAL GROWTH APPARATUS AND CRYSTAL GROWTH METHOD von TERAJIMA AKIRA, KOCHIYA TOSHIO

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HEAT INSULATION STRUCTURE von FUKUHARA HIROAKI, KOCHIYA TOSHIO

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METHOD FOR MANUFACTURING SAPPHIRE SINGLE CRYSTAL von OMI TOSHIYUKI, KOCHIYA TOSHIO

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PRODUCTION METHOD OF SAPPHIRE SINGLE CRYSTAL von KITAGAWA TAIZO, KOCHIYA TOSHIO

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