Carbon ejection from a SiO2/SiC(0001) interface by annealing in high-purity Ar von Kobayashi, Takuma, Kimoto, Tsunenobu

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Native point defects and carbon clusters in 4H-SiC: A hybrid functional study von Kobayashi, Takuma, Harada, Kou, Kumagai, Yu, Oba, Fumiyasu, Matsushita, Yu-ichiro

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Structure and energetics of carbon defects in SiC (0001)/SiO2 systems at realistic temperatures: Defects in SiC, SiO2, and at their interface von Kobayashi, Takuma, Matsushita, Yu-ichiro

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Oxygen-vacancy defect in 4H-SiC as a near-infrared emitter: An ab initio study von Kobayashi, Takuma, Shimura, Takayoshi, Watanabe, Heiji

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Effect of quantum confinement on the defect-induced localized levels in 4H-SiC(0001)/SiO2 systems von Ito, Koji, Kobayashi, Takuma, Kimoto, Tsunenobu

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Interface and oxide trap states of SiO2/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy von Ogawa, Shingo, Mizobata, Hidetoshi, Kobayashi, Takuma, Shimura, Takayoshi, Watanabe, Heiji

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Interface state density of SiO2/p-type 4H-SiC ( 0001 ), ( 11 2 ¯ 0 ), ( 1 1 ¯ 00 ) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes von Kobayashi, Takuma, Nakazawa, Seiya, Okuda, Takafumi, Suda, Jun, Kimoto, Tsunenobu

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Oxygen-related defects in 4H-SiC from first principles von Iwamoto, Sosuke, Shimura, Takayoshi, Watanabe, Heiji, Kobayashi, Takuma

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Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing von Nakanuma, Takato, Tahara, Kosuke, Kutsuki, Katsuhiro, Shimura, Takayoshi, Watanabe, Heiji, Kobayashi, Takuma

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Estimation of Threshold Voltage in SiC Short-Channel MOSFETs von Tachiki, Keita, Ono, Takahisa, Kobayashi, Takuma, Tanaka, Hajime, Kimoto, Tsunenobu

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Impacts of post-deposition annealing on hole trap generation at SiO2/p-type GaN MOS interfaces von Tomigahara, Kazuki, Hara, Masahiro, Nozaki, Mikito, Kobayashi, Takuma, Watanabe, Heiji

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Electrical properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 000 1 ¯) substrates von Mizobata, Hidetoshi, Tomigahara, Kazuki, Nozaki, Mikito, Kobayashi, Takuma, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

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Separate evaluation of interface and oxide hole traps in SiO2/GaN MOS structures with below- and above-gap light excitation von Kobayashi, Takuma, Tomigahara, Kazuki, Nozaki, Mikito, Shimura, Takayoshi, Watanabe, Heiji

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Toxicological effects of two metabolites derived from o-toluidine and o-anisidine after 28-day oral administration to rats von Toyoda, Takeshi, Kobayashi, Takuma, Miyoshi, Noriyuki, Matsushita, Kohei, Akane, Hirotoshi, Morikawa, Tomomi, Ogawa, Kumiko

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Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing von Wada, Yuhei, Mizobata, Hidetoshi, Nozaki, Mikito, Kobayashi, Takuma, Hosoi, Takuji, Kachi, Tetsu, Shimura, Takayoshi, Watanabe, Heiji

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Utilizing a long sheath to minimize atheroma manipulation (minimal manipulation approach) during Zone 1 and 2 thoracic endovascular aortic repair with a shaggy aorta von Kawajiri, Hidetake, Kobayashi, Takuma, Manabe, Kaichiro, Kanda, Keiichi, Numata, Satoshi

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Design of SiO2/4H–SiC MOS interfaces by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing von Kil, Tae-Hyeon, Kobayashi, Takuma, Shimura, Takayoshi, Watanabe, Heiji

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Deep Learning–based Post Hoc CT Denoising for Myocardial Delayed Enhancement von Nishii, Tatsuya, Kobayashi, Takuma, Tanaka, Hironori, Kotoku, Akiyuki, Ohta, Yasutoshi, Morita, Yoshiaki, Umehara, Kensuke, Ota, Junko, Horinouchi, Hiroki, Ishida, Takayuki, Fukuda, Tetsuya

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Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing von Kobayashi, Takuma, Tachiki, Keita, Ito, Koji, Kimoto, Tsunenobu

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Generation of single photon emitters at a SiO2/SiC interface by high-temperature oxidation and reoxidation at lower temperatures von Onishi, Kentaro, Nakanuma, Takato, Tahara, Kosuke, Kutsuki, Katsuhiro, Shimura, Takayoshi, Watanabe, Heiji, Kobayashi, Takuma

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