Laser-Induced Crystallization of Copper Oxide Thin Films: A Comparison between Gaussian and Chevron Beam Profiles von Bodeau, William, Otoge, Kaisei, Yeh, Wenchang, Kobayashi, Nobuhiko P.

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Order-N calculations for thermoelectric power factor based on linear response theory von Ishii, Hiroyuki, Kobayashi, Nobuhiko, Hirose, Kenji

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Resistive switching conducting filament electroformation with an electrothermal phase field method von Sevic, John F., Kobayashi, Nobuhiko P.

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Formation of single-crystal Cu2O strips in non-single-crystal CuO thin films by continuous-wave laser diode with micro-chevron laser beam (μ-CLB) von Giraldo, Brian, Yeh, Wenchang, Kobayashi, Nobuhiko P.

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Schottky diode based resistive switching device based on ZnO/PEDOT:PSS heterojunction to reduce sneak current problem von Khan, Muhammad Umair, Hassan, Gul, Raza, Muhammad Asim, Bae, Jinho, Kobayashi, Nobuhiko P.

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Powder x-ray diffraction analysis with machine learning for organic-semiconductor crystal-structure determination von Niitsu, Naoyuki, Mitani, Masato, Ishii, Hiroyuki, Kobayashi, Nobuhiko, Hirose, Kenji, Watanabe, Shun, Okamoto, Toshihiro, Takeya, Jun

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Visualization and Manipulation of Bilayer Graphene Quantum Dots with Broken Rotational Symmetry and Nontrivial Topology von Ge, Zhehao, Joucken, Frederic, Quezada, Eberth, da Costa, Diego R, Davenport, John, Giraldo, Brian, Taniguchi, Takashi, Watanabe, Kenji, Kobayashi, Nobuhiko P, Low, Tony

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Gate induced modulation of electronic states in monolayer organic field-effect transistor von Ishii, Hiroyuki, Kasuya, Naotaka, Kobayashi, Nobuhiko, Hirose, Kenji, Kumagai, Shohei, Watanabe, Shun, Takeya, Jun

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Single-molecule detection with enhanced Raman scattering of tungsten oxide nanostructure von Shingaya, Yoshitaka, Takaki, Hirokazu, Kobayashi, Nobuhiko, Aono, Masakazu, Nakayama, Tomonobu

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Resistive switching device with highly-asymmetric current-voltage characteristics: its error analysis and new design parameter von Bae, Jinho, Kobayashi, Nobuhiko P

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Resistive switching device with highly asymmetric current-voltage characteristics: a solution to backward sneak current in passive crossbar arrays von Ali, Shawkat, Bae, Jinho, Lee, Chong Hyun, Kobayashi, Nobuhiko P, Shin, Sangho, Ali, Adnan

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A computational phase field study of conducting channel formation in dielectric thin films: A view toward the physical origins of resistive switching von Sevic, John F., Kobayashi, Nobuhiko P.

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Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch von Choi, Byung Joon, Torrezan, Antonio C, Norris, Kate J, Miao, Feng, Strachan, John Paul, Zhang, Min-Xian, Ohlberg, Douglas A. A, Kobayashi, Nobuhiko P, Yang, J. Joshua, Williams, R. Stanley

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The efficient method for searching stable structures in herringbone-phase organic semiconductors using density functional theory von Hakata, Shuya, Ishii, Hiroyuki, Takaki, Hirokazu, Okamoto, Toshihiro, Takeya, Jun, Kobayashi, Nobuhiko

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First-principles calculations of Seebeck coefficients in a magnetic semiconductor CuFeS2 von Takaki, Hirokazu, Kobayashi, Kazuaki, Shimono, Masato, Kobayashi, Nobuhiko, Hirose, Kenji, Tsujii, Naohito, Mori, Takao

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Wave-packet approach to transport properties of carrier coupled with intermolecular and intramolecular vibrations of organic semiconductors von Ishii, Hiroyuki, Honma, Keisuke, Kobayashi, Nobuhiko, Hirose, Kenji

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A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities von VJ, Logeeswaran, Oh, Jinyong, Nayak, Avinash P., Katzenmeyer, Aaron M., Gilchrist, Kristin H., Grego, Sonia, Kobayashi, Nobuhiko P., Wang, Shih-Yuan, Talin, A. Alec, Dhar, Nibir K., Islam, M. Saif

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Second highest occupied molecular orbital effects on the valence band structure of organic semiconductors von Kuroda, Yuki, Ishii, Hiroyuki, Yoshino, Sayaka, Kobayashi, Nobuhiko

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Ultrasmooth Silver Thin Films Deposited with a Germanium Nucleation Layer von Logeeswaran VJ, Kobayashi, Nobuhiko P, Islam, M. Saif, Wu, Wei, Chaturvedi, Pratik, Fang, Nicholas X, Wang, Shih Yuan, Williams, R. Stanley

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Ultra-low power non-volatile resistive crossbar memory based on pull up resistors von Ali, Shawkat, Bae, Jinho, Lee, Chong Hyun, Shin, Sangho, Kobayashi, Nobuhiko P.

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