A new recombination model for device simulation including tunneling von Hurkx, G.A.M., Klaassen, D.B.M., Knuvers, M.P.G.

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A unified mobility model for device simulation—I. Model equations and concentration dependence von Klaassen, D.B.M.

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PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations von Wu, W., Li, X., Gildenblat, G., Workman, G.O., Veeraraghavan, S., McAndrew, C.C., van Langevelde, R., Smit, G.D.J., Scholten, A.J., Klaassen, D.B.M., Watts, J.

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A unified mobility model for device simulation—II. Temperature dependence of carrier mobility and lifetime von Klaassen, D.B.M.

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Precursor route pentacene metal-insulator-semiconductor field-effect transistors von Brown, A. R., Pomp, A., de Leeuw, D. M., Klaassen, D. B. M., Havinga, E. E., Herwig, P., Müllen, K.

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Electroplating of conductive polymers for the metallization of insulators von de Leeuw, D.M., Kraakman, P.A., Bongaerts, P.F.G., Mutsaers, C.M.J., Klaassen, D.B.M.

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RF benchmark tests for compact MOS models von Smit, G D J, Scholten, A J, Klaassen, D B M

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RF-CMOS performance trends von Woerlee, P.H., Knitel, M.J., van Langevelde, R., Klaassen, D.B.M., Tiemeijer, L.F., Scholten, A.J., Zegers-van Duijnhoven, A.T.A.

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The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications von Scholten, A.J., Smit, G.D.J., De Vries, B.A., Tiemeijer, L.F., Croon, J.A., Klaassen, D.B.M., van Langevelde, R., Xin Li, Weimin Wu, Gildenblat, G.

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Modeling statistical dopant fluctuations in MOS transistors von Stolk, P.A., Widdershoven, F.P., Klaassen, D.B.M.

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Layout and spacer optimization for high-frequency low-noise performance in HBT's von Vanhoucke, T, Donkers, J J T M, Hurkx, G A M, Magnee, P H C, van Dalen, R, Egbers, J H, Klaassen, D B M

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New fundamental insights into capacitance modeling of laterally nonuniform MOS devices von Aarts, A.C.T., van der Hout, R., Paasschens, J.C.J., Scholten, A.J., Willemsen, M.B., Klaassen, D.B.M.

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Excitation mechanism of cathodoluminescence of solid solutions of oxysulfides von KLAASSEN, D. B. M, MULDER, H, RONDA, C. R

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A universal description of the luminescence saturation behavior per phosphor von KLAASSEN, D. B. M, VAN RIJN, T. G. M, VINK, A. T

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Comments on "A Physics-Based Analytic Solution to the MOSFET Surface Potential From Accumulation to Strong-Inversion Region" von Gildenblat, G.., Klaassen, D.B.M., McAndrew, C.C.

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Temperature and geometry dependence of the electrothermal instability of bipolar transistors von Scholten, A. J., Vanhoucke, T., Klaassen, D. B. M.

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Investigation of power and linearity performance for low- and high-voltage SiGe HBTs von Dinh, T. V., Pijper, R., Vanhoucke, T., Gridelet, E., Klaassen, D. B. M.

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Unified apparent bandgap narrowing in n- and p-type silicon von Klaassen, D.B.M., Slotboom, J.W., de Graaff, H.C.

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Fast noise prediction for process optimization using only standard DC and S-parameter measurements von Gridelet, E., Scholten, A. J., Klaassen, D. B. M., van Dalen, R., Pijper, R., Magnee, P. H. C., Tiemeijer, L. F., Dinh, V. T., Vanhoucke, T.

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SiGe:C profile optimization for low noise performance von Magnee, P. H. C., van Dalen, R., Mertens, H., Vanhoucke, T., van Velzen, B., Huiskamp, P., Brunets, I., Donkers, J. J. T. M., Klaassen, D. B. M.

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