Avalanche Capability of Vertical GaN p-n Junctions on Bulk GaN Substrates von Aktas, O., Kizilyalli, I. C.

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Vertical Power p-n Diodes Based on Bulk GaN von Kizilyalli, Isik C., Edwards, Andrew P., Aktas, Ozgur, Prunty, Thomas, Bour, David

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Characterization of vertical GaN p-n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures von Kizilyalli, I C, Aktas, O

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3.7 kV Vertical GaN PN Diodes von Kizilyalli, Isik C., Edwards, Andrew P., Nie, Hui, Bour, Dave, Prunty, Thomas, Disney, Don

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27.6% Conversion efficiency, a new record for single-junction solar cells under 1 sun illumination von Kayes, B. M., Hui Nie, Twist, R., Spruytte, S. G., Reinhardt, F., Kizilyalli, I. C., Higashi, G. S.

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High Voltage Vertical GaN p-n Diodes With Avalanche Capability von Kizilyalli, Isik C., Edwards, Andrew P., Hui Nie, Disney, Don, Bour, Dave

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Vertical GaN Power Diodes With a Bilayer Edge Termination von Dickerson, Jeramy R., Allerman, Andrew A., Bryant, Benjamin N., Fischer, Arthur J., King, Michael P., Moseley, Michael W., Armstrong, Andrew M., Kaplar, Robert J., Kizilyalli, Isik C., Aktas, Ozgur, Wierer, Jonathan J.

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Experimental observation of RF avalanche gain in GaN-based PN junction diodes von Fay, P, Aktas, O, Bour, D, Kizilyalli, I.C

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Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes von Mauch, Daniel L., Zutavern, Fred J., Delhotal, Jarod J., King, Michael P., Neely, Jason C., Kizilyalli, Isik C., Kaplar, Robert J.

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(Invited) Selective Area Doping in Gallium Nitride: A Retrospective of the ARPA-E PNDIODES Program von Kizilyalli, Isik C, Carlson, Eric P

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400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 V von Kizilyalli, Isik C., Edwards, Andrew P., Hui Nie, Phong Bui-Quang, Disney, Donald, Bour, Dave

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Reliability studies of vertical GaN devices based on bulk GaN substrates von Kizilyalli, Isik C., Bui-Quang, P., Disney, D., Bhatia, H., Aktas, Ozgur

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(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future von Kizilyalli, Isik C, Blum Spahn, Olga, Carlson, Eric P

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Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes von King, M. P., Armstrong, A. M., Dickerson, J. R., Vizkelethy, G., Fleming, R. M., Campbell, J., Wampler, W. R., Kizilyalli, I. C., Bour, D. P., Aktas, O., Nie, H., Disney, D., Wierer, J., Allerman, A. A., Moseley, M. W., Leonard, F., Talin, A. A., Kaplar, R. J.

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Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes von Vizkelethy, G., King, M.P., Aktas, O., Kizilyalli, I.C., Kaplar, R.J.

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Power Electronic Devices and Systems Based on Bulk GaN Substrates von Carlson, Eric P., Cunningham, Daniel W., Kizilyalli, Isik C., Xu, Yan Zhi

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4-kV and 2.8- \text\Omega -cm2 Vertical GaN p-n Diodes With Low Leakage Currents von Kizilyalli, I. C., Prunty, T., Aktas, O.

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4-kV and 2.8-[Formula Omitted]-cm2 Vertical GaN p-n Diodes With Low Leakage Currents von Kizilyalli, I C, Prunty, T, Aktas, O

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4-kV and 2.8-$\text{m}\Omega $ -cm 2 Vertical GaN p-n Diodes With Low Leakage Currents von Kizilyalli, I. C., Prunty, T., Aktas, O.

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Giant isotope effect in hot electron degradation of metal oxide silicon devices von Hess, K., Kizilyalli, I.C., Lyding, J.W.

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