GaInNAs : A novel material for long-wavelength-range laser diodes with excellent high-temperature performance von KONDOW, M, UOMI, K, NIWA, A, KITATANI, T, WATAHIKI, S, YAZAWA, Y

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Temperature-dependent photoluminescence of high-quality GaInNAs single quantum wells von Shirakata, Sho, Kondow, Masahiko, Kitatani, Takeshi

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Direct Modulation at 56 and 50 Gb/s of 1.3- \mu m InGaAlAs Ridge-Shaped-BH DFB Lasers von Nakahara, Kouji, Wakayama, Yuki, Kitatani, Takeshi, Taniguchi, Takafumi, Fukamachi, Toshihiko, Sakuma, Yasushi, Tanaka, Shigehisa

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Photoluminescence and photoreflectance of GaInNAs single quantum wells von Shirakata, Sho, Kondow, Masahiko, Kitatani, Takeshi

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Monolithically Lens-Integrated Photonic Device Arrays for Compact Optical Transceivers von Shinoda, Kazunori, Adachi, Koichiro, Lee, Yong, Kitatani, Takeshi, Fukamachi, Toshihiko, Yamashita, Hiroki, Takemoto, Takashi, Yuki, Fumio, Sugawara, Toshiki, Tanaka, Shigehisa, Tsuji, Shinji

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Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy von Kitatani, Takeshi, Kondow, Masahiko, Kikawa, Takeshi, Yazawa, Yoshiaki, Okai, Makoto, Uomi, Kazuhisa

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Very-Low-Current and High-Speed Switching Operation of InAlGaAs/InAlAs/InP Mach–Zehnder Interferometer-Type Photonic Switch von Ueda, Yuta, Nakamura, Shinya, Utaka, Katsuyuki, Shiota, Takashi, Kitatani, Takeshi

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Studies of quantum levels in GaInNAs single quantum wells von Shirakata, Sho, Kondow, Masahiko, Kitatani, Takeshi

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Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAs von Kitatani, Takeshi, Kondow, Masahiko, Kudo, Makoto

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High-Speed EA-DFB Laser for 40-G and 100-Gbps von MAKINO, Shigeki, SHINODA, Kazunori, KITATANI, Takeshi, HAYASHI, Hiroaki, SHIOTA, Takashi, TANAKA, Shigehisa, AOKI, Masahiro, SASADA, Noriko, NAOE, Kazuhiko

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25-Gb/s Multichannel 1.3-μm Surface-Emitting Lens-Integrated DFB Laser Arrays von ADACHI, Koichiro, SHINODA, Kazunori, KITATANI, Takeshi, FUKAMACHI, Toshihiko, MATSUOKA, Yasunobu, SUGAWARA, Toshiki, TSUJI, Shinji

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Room-temperature pulsed operation of GaInNAs laser diodes with excellent high-temperature performance von KONDOW, M, NAKATSUKA, S, KITATANI, T, YAZAWA, Y, OKAI, M

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CHARACTERIZATION OF THE REFRACTIVE INDEX OF LATERAL-OXIDATION-FORMED AlxOy BY SPECTROSCOPIC ELLIPSOMETRY von Kitatani, T, Kondow, M

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Wide-Tuning-Wavelength-Range LGLC Laser with Low-Loss Dual-Core Spot Size Converter von SUZUKI, Takanori, ARIMOTO, Hideo, KITATANI, Takeshi, TAKEI, Aki, TANIGUCHI, Takafumi, SHINODA, Kazunori, TANAKA, Shigehisa, TSUJI, Shinji, IDO, Tatemi, IGRASHI, Jun, NAKAMURA, Atsushi, NAOE, Kazuhiko, UCHIDA, Kenji

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Polarized Raman Spectra and N-Related Local Vibrational Mode in GaNAs and GaInNAs Epitaxial Layers Grown on GaAs von Shirakata, Sho, Kondow, Masahiko, Kitatani, Takeshi

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Interdiffusion of magnesium and iron dopants in gallium nitride von Tsuchiya, Tomonobu, Kitatani, Takeshi, Terano, Akihisa, Mochizuki, Kazuhiro

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In situ Annealing of GaInNAs up to 600°C von Kondow, Masahiko, Kitatani, Takeshi

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Wide Temperature Range Operation of 25-Gb/s 1.3-μm InGaAlAs Directly Modulated Lasers von Fukamachi, Toshihiko, Adachi, Koichiro, Shinoda, Kazunori, Kitatani, Takeshi, Tanaka, Shigehisa, Aoki, Masahiro, Tsuji, Shinji

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In situ Deep Etching for an InGaAlAs Buried Heterostructure by Using HCl Gas in a Metalorganic Vapor Phase Epitaxy Reactor von Tsuchiya, Tomonobu, Kitatani, Takeshi, Ouchi, Kiyoshi, Sato, Hiroshi, Aoki, Masahiko

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Estimation of Low Ga-Content (Less Than 10%) in AlGaAs by Spectroscopic Ellipsometry von Kitatani, Takeshi, Kondow, Masahiko

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