Vapor-phase epitaxy of high-crystallinity GaN films using Ga2O vapor and NH3 von IMADE, Mamoru, KISHIMOTO, Hiroki, KAWAMURA, Fumio, YOSHIMURA, Masashi, KITAOKA, Yasuo, SASAKI, Takatomo, MORI, Yusuke

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Growth of thin rubrene single crystals from 1-propanol solvent von Matsukawa, Takeshi, Yoshimura, Masashi, Sasai, Kenichi, Uchiyama, Masahito, Yamagishi, Masakazu, Tominari, Yukihiro, Takahashi, Yoshinori, Takeya, Junichi, Kitaoka, Yasuo, Mori, Yusuke, Sasaki, Takatomo

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Chemical etchant dependence of surface structure and morphology on GaN(0001) substrates von Hattori, Azusa N., Kawamura, Fumio, Yoshimura, Masashi, Kitaoka, Yasuo, Mori, Yusuke, Hattori, Ken, Daimon, Hiroshi, Endo, Katsuyoshi

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Control of Growth Facets and Dislocation Propagation Behavior in the Na-Flux Growth of GaN von Imade, Mamoru, Hirabayashi, Yasuhiro, Miyoshi, Naoya, Yoshimura, Masashi, Kitaoka, Yasuo, Sasaki, Takatomo, Mori, Yusuke

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Accurate measurement of quadratic nonlinear-optical coefficients of gallium nitride von ABE, Makoto, SATO, Hiroaki, SHOJI, Ichiro, SUDA, Jun, YOSHIMURA, Masashi, KITAOKA, Yasuo, MORI, Yusuke, KONDO, Takashi

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Growth of a Two-Inch GaN Single Crystal Substrate Using the Na Flux Method von Kawamura, Fumio, Umeda, Hidekazu, Morishita, Masanori, Kawahara, Minoru, Yoshimura, Masashi, Mori, Yusuke, Sasaki, Takatomo, Kitaoka, Yasuo

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Enhancement of the CsB3O5(CBO) crystal quality by fast cooling after crystal growth von Wang, Zengmei, Rajesh, Dodla, Yoshimura, Masashi, Shimatani, Hiroya, Kitaoka, Yasuo, Mori, Yusuke, Sasaki, Takatomo

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Study of the metastable region in the growth of GaN using the Na flux method von Kawamura, Fumio, Morishita, Masanori, Miyoshi, Naoya, Imade, Mamoru, Yoshimura, Masashi, Kitaoka, Yasuo, Mori, Yusuke, Sasaki, Takatomo

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Research and Development Policy in Japan to Lead to Innovation von KITAOKA, Yasuo

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A Practical Laser Projector with New Illumination Optics for Reduction of Speckle Noise von Kasazumi, Ken'ichi, Kitaoka, Yasuo, Mizuuchi, Kiminori, Yamamoto, Kazuhisa

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Growth of 2H–SiC single crystals in a Li-based flux von Kawamura, Fumio, Ogura, Takashi, Imade, Mamoru, Yoshimura, Masashi, Kitaoka, Yasuo, Mori, Yusuke, Sasaki, Takatomo

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Liquid-phase epitaxy of 2H–SiC film on a (0001) 4H–SiC substrate in Li–Si melt von Imade, Mamoru, Ogura, Takashi, Uemura, Masahiro, Kawamura, Fumio, Yoshimura, Masashi, Kitaoka, Yasuo, Sasaki, Takatomo, Mori, Yusuke, Yamazaki, Masanobu, Suwabe, Shigekazu, Nakashima, Shin-ichi

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Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method von Isobe, Yasuhiro, Iida, Daisuke, Sakakibara, Tatsuyuki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi, Imade, Mamoru, Kitaoka, Yasuo, Mori, Yusuke

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Crystal growth of in a dry atmosphere and from a stoichiometric melt composition von Kawamura, Takahiro, Yoshimura, Masashi, Shimizu, Yohei, Nishioka, Masato, Fukushima, Yuji, Kaneda, Yushi, Kitaoka, Yasuo, Mori, Yusuke, Sasaki, Takatomo

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The Effects of Substrate Surface Treatments on Growth of $a$-Plane GaN Single Crystals Using Na Flux Method von Masumoto, Keiko, Murakami, Kosuke, Imabayashi, Hiroki, Takazawa, Hideo, Todoroki, Yuma, Matsuo, Daisuke, Kitamoto, Akira, Maruyama, Mihoko, Imade, Mamoru, Yoshimura, Masashi, Kitaoka, Yasuo, Sasaki, Takatomo, Mori, Yusuke

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Effect of carbon additive on increases in the growth rate of 2 in GaN single crystals in the Na flux method von Kawamura, Fumio, Morishita, Masanori, Tanpo, Masaki, Imade, Mamoru, Yoshimura, Masashi, Kitaoka, Yasuo, Mori, Yusuke, Sasaki, Takatomo

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Technological Development for Advanced Materials Underpinning the Industrial Competitiveness of Japan von KITAOKA, Yasuo

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Improved efficiency of a pulsed optical parametric oscillator by delayed double-pass pump von KANEDA, Yushi, PEYGHAMBARIAN, N, MIYAZONO, Kenshi, SHIMATANI, Hiroya, HONDA, Yoshiyuki, YOSHIMURA, Masashi, MORI, Yusuke, KITAOKA, Yasuo, SASAKI, Takatomo

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Effect of carbon additive on increases in the growth rate of 2in GaN single crystals in the Na flux method von Kawamura, Fumio, Morishita, Masanori, Tanpo, Masaki, Imade, Mamoru, Yoshimura, Masashi, Kitaoka, Yasuo, Mori, Yusuke, Sasaki, Takatomo

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Liquid Phase Epitaxy Growth of m-Plane GaN Substrate Using the Na Flux Method von Iwahashi, Tomoya, Kitaoka, Yasuo, Kawamura, Fumio, Yoshimura, Masashi, Mori, Yusuke, Sasaki, Takatomo, Armitage, Rob, Hirayama, Hideki

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