A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laser von Song, Y.-K., Zhou, H., Diagne, M., Nurmikko, A. V., Schneider, R. P., Kuo, C. P., Krames, M. R., Kern, R. S., Carter-Coman, C., Kish, F. A.

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Large-scale photonic integrated circuits von Nagarajan, R., Joyner, C.H., Schneider, R.P., Bostak, J.S., Butrie, T., Dentai, A.G., Dominic, V.G., Evans, P.W., Kato, M., Kauffman, M., Lambert, D.J.H., Mathis, S.K., Mathur, A., Miles, R.H., Mitchell, M.L., Missey, M.J., Murthy, S., Nilsson, A.C., Peters, F.H., Pennypacker, S.C., Pleumeekers, J.L., Salvatore, R.A., Schlenker, R.K., Taylor, R.B., Huan-Shang Tsai, Van Leeuwen, M.F., Webjorn, J., Ziari, M., Perkins, D., Singh, J., Grubb, S.G., Reffle, M.S., Mehuys, D.G., Kish, F.A., Welch, D.F.

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High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency von Krames, M. R., Ochiai-Holcomb, M., Höfler, G. E., Carter-Coman, C., Chen, E. I., Tan, I.-H., Grillot, P., Gardner, N. F., Chui, H. C., Huang, J.-W., Stockman, S. A., Kish, F. A., Craford, M. G., Tan, T. S., Kocot, C. P., Hueschen, M., Posselt, J., Loh, B., Sasser, G., Collins, D.

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The Realization of Large-Scale Photonic Integrated Circuits and the Associated Impact on Fiber-Optic Communication Systems von Welch, D.F., Kish, F.A., Nagarajan, R., Joyner, C.H., Schneider, R.P., Dominic, V.G., Mitchell, M.L., Grubb, S.G., Ting-Kuang Chiang, Perkins, D.D., Nilsson, A.C.

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Very high-efficiency semiconductor wafer-bonded transparent-substrate (Al x Ga1− x )0.5In0.5P/GaP light-emitting diodes von Kish, F. A., Steranka, F. M., DeFevere, D. C., Vanderwater, D. A., Park, K. G., Kuo, C. P., Osentowski, T. D., Peanasky, M. J., Yu, J. G., Fletcher, R. M., Steigerwald, D. A., Craford, M. G., Robbins, V. M.

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A vertical cavity light emitting InGaN quantum well heterostructure von Song, Y.-K., Zhou, H., Diagne, M., Ozden, I., Vertikov, A, Nurmikko, A. V., Carter-Coman, C., Kern, R. S., Kish, F. A., Krames, M. R.

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A vertical injection blue light emitting diode in substrate separated InGaN heterostructures von Song, Y.-K., Diagne, M., Zhou, H., Nurmikko, A. V., Carter-Coman, C., Kern, R. S., Kish, F. A., Krames, M. R.

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Wafer bonding of 75 mm diameter GaP to AlGaInP-GaP light-emitting diode wafers von TAN, I.-H, VANDERWATER, D. A, HUANG, J.-W, HOFLER, G. E, KISH, F. A, CHEN, E. I, OSTENTOWSKI, T. D

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Wafer bonding of 50-mm diameter GaP to AlGaInP-GaP light-emitting diode wafers von Höfler, G. E., Vanderwater, D. A., DeFevere, D. C., Kish, F. A., Camras, M. D., Steranka, F. M., Tan, I.-H.

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native oxide stabilization of AlAs-GaAs heterostructures von SUGG, A. R, HOLONYAK, N. JR, BAKER, J. E, KISH, F. A, DALLESASSE, J. M

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Planar native-oxide index-guided AlxGa1-xAs-GaAs quantum well heterostructure lasers von KISH, F. A, CARACCI, S. J, HOLONYAK, N. JR, DALLESASSE, J. M, HSIEH, K. C, RIES, M. J, SMITH, S. C, BURNHAM, R. D

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400 Gbit/s (10 channel × 40 Gbit/s) DWDM photonic integrated circuits von NAGARAJAN, R, KATO, M, MATHIS, S. K, MATHUR, A, MITCHELL, M. L, MISSEY, M. J, MURTHY, S, NILSSON, A. C, PETERS, F. H, PLEUMEEKERS, J. L, SALVATORE, R. A, TAYLOR, R. B, DOMINIC, V. G, VAN LEEUWEN, M. F, WEBJORN, J, ZIARI, M, GRUBB, S. G, PERKINS, D, REFFLE, M, MEHUYS, D. G, KISH, F. A, WELCH, D. F, JOYNER, C. H, SCHNEIDER, R. P, DENTAI, A. G, DESIKAN, T, EVANS, P. W, KAUFFINAN, M, LAMBERT, D. J. H

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DEPENDENCE ON DOPING TYPE (P/N) OF THE WATER-VAPOR OXIDATION OF HIGH-GAP ALXGA1-XAS von KISH, FA, MARANOWSKI, SA, HOFLER, GE, HOLONYAK, N, CARACCI, SJ, DALLESASSE, JM, HSIEH, KC

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Low-resistance Ohmic conduction across compound semiconductor wafer-bonded interfaces von Kish, F. A., Vanderwater, D. A., Peanasky, M. J., Ludowise, M. J., Hummel, S. G., Rosner, S. J.

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Current Status of Large-Scale InP Photonic Integrated Circuits von Kish, F. A., Welch, D., Nagarajan, R., Pleumeekers, J. L., Lal, V., Ziari, M., Nilsson, A., Kato, M., Murthy, S., Evans, P., Corzine, S. W., Mitchell, M., Samra, P., Missey, M., DeMars, S., Schneider, R. P., Reffle, M. S., Butrie, T., Rahn, J. T., Van Leeuwen, M., Stewart, J. W., Lambert, D. J., Muthiah, R. C., Tsai, H., Bostak, J. S., Dentai, A., Wu, K., Sun, H., Pavinski, D. J., Zhang, J., Tang, J., McNicol, J., Kuntz, M., Dominic, V., Taylor, B. D., Salvatore, R. A., Fisher, M., Spannagel, A., Strzelecka, E., Studenkov, P., Raburn, M., Williams, W., Christini, D., Thomson, K. K., Agashe, S. S., Malendevich, R., Goldfarb, G., Melle, S., Joyner, C., Kaufman, M., Grubb, S. G.

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Background doping dependence of silicon diffusion on p-type GaAs von DEPPE, D. G, HOLONYAK, N. JR, KISH, F. A, BAKER, J. E

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High-brightness AlGaInP light emitting diodes von Vanderwater, D.A., Tan, I.-H., Hofler, G.E., Defevere, D.C., Kish, F.A.

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HIGH-PERFORMANCE PLANAR NATIVE-OXIDE BURIED-MESA INDEX-GUIDED ALGAAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS von CARACCI, SJ, KISH, FA, HOLONYAK, N, MARANOWSKI, SA, SMITH, SC, BURNHAM, RD

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PLANAR NATIVE-OXIDE ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE RING LASER-DIODES von KISH, FA, CARACCI, SJ, MARANOWSKI, SA, HOLONYAK, N, SMITH, SC, BURNHAM, RD

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Science and technology challenges in XXIst century optical communications von Desurvire, E., Kazmierski, C., Lelarge, F., Marcadet, X., Scavennec, André, Kish, F.A., Welch, D.F., Nagarajan, R., Joyner, C.H., Schneider, R.P., Corzine, S.W., Kato, M., Evans, P.W., Ziari, M., Dentai, A.G., Pleumeekers, J.L., Muthiah, R., Bigo, S., Nakazawa, M., Richardson, D.J., Poletti, F., Petrovich, M.N., Alam, S.U., Loh, W.H., Payne, D.N.

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