Regrown source/drain in InGaAs multi-gate MOSFETs von Miyamoto, Yasuyuki, Kanazawa, Toru, Kise, Nobukazu, Kinoshita, Haruki, Ohsawa, Kazuto

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GaAsSb/InGaAs double-gate vertical tunnel FET with a subthreshold slope of 56 mV dec−1 at room temperature von Aonuma, Ryosuke, Kise, Nobukazu, Miyamoto, Yasuyuki

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Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO sub(2)/Al sub(2) O sub(3)/InGaAs gate stacks von Ohsawa, Kazuto, Netsu, Seiko, Kise, Nobukazu, Noguchi, Shinji, Miyamoto, Yasuyuki

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Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO 2 /Al 2 O 3 /InGaAs gate stacks von Ohsawa, Kazuto, Netsu, Seiko, Kise, Nobukazu, Noguchi, Shinji, Miyamoto, Yasuyuki

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Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks von Ohsawa, Kazuto, Netsu, Seiko, Kise, Nobukazu, Noguchi, Shinji, Miyamoto, Yasuyuki

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Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain von Kise, Nobukazu, Kinoshita, Haruki, Yukimachi, Atsushi, Kanazawa, Toru, Miyamoto, Yasuyuki

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Thermal print head, manufacturing method of thermal print head, and thermal printer von Kise, Nobukazu

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THERMAL PRINT HEAD, MANUFACTURING METHOD OF THERMAL PRINT HEAD, AND THERMAL PRINTER von KISE, NOBUKAZU

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Thermal print head, thermal printer and methods fabricating thereof von Kise, Nobukazu, Nakatani, Goro

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Improvement in GaAsSb/InGaAs double-gate tunnel FET using Al2O3/ZrO2 for gate insulator von Aonuma, Ryosuke, Nobukazu, Kise, Yasuyuki, Miyamoto

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THERMAL PRINT HEAD, THERMAL PRINTER AND METHODS FABRICATING THEREOF von KISE, NOBUKAZU, NAKATANI, GORO

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Influence of gate metallization processes in GaAsSb/InGaAs Double-Gate Tunnel FET von Kise, Nobukazu, Aonuma, Ryosuke, Miyamoto, Yasuyuki

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GaAsSb/InGaAs Double-Gate Tunnel FET with a Subthreshold Swing of 68mV/dec von Kise, Nobukazu, Iwata, Shinjiro, Aonuma, Ryosuke, Miyamoto, Yasuyuki

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Improvement of On-state Current by Modified Doping Profile in GaAsSb/InGaAs Double-Gate Tunnel FET von iwata, shinjiro, kise, nobukazu, aonuma, ryosuke, miyamoto, yasuyuki

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Process Development for the Multi-Gate MOSFETs with InGaAs Nanosheet Channels von Ohsawa, Kazuto, Kanazawa, Toru, Kise, Nobukazu, Amemiya, Tomohiro, Miyamoto, Yasuyuki

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Deposition Temperature and Al2O3 Thickness Dependence on the Mobility of HfO2/Al2O3/InGaAs Gate Stacks von Ohsawa, Kazuto, Kise, Nobukazu, miyamoto, Yasuyuki

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Fabrication of InGaAs Nanosheet Transistors von Kanazawa, Toru, Ohsawa, Kazuto, Amemiya, Tomohiro, Kise, Nobukazu, Aonuma, Ryosuke, Miyamoto, Yasuyuki

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Dependence of the Mobility on Deposition Temperature and Al2O3 Thickness in MOSFETs with HfO2/Al2O3/InGaAs Gate Stacks after H2 Annealing von Ohsawa, Kazuto, Noguchi, Shinji, Netsu, Seiko, Kise, Nobukazu, Miyamoto, Yasuyuki

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THERMAL PRINT HEAD, THERMAL PRINT HEAD MANUFACTURING METHOD AND THERMAL PRINTER von KISE NOBUKAZU

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Operation of 16nm-InGaAs channel multi-gate MOSFETs with MOVPE regrown source/drain von kinoshita, haruki, kise, nobukazu, netsu, seiko, kanazawa, toru, miyamoto, yasuyuki

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