Wurtzite ScAlN, InAlN, and GaAlN crystals, a comparison of structural, elastic, dielectric, and piezoelectric properties von Ambacher, O., Christian, B., Feil, N., Urban, D. F., Elsässer, C., Prescher, M., Kirste, L.

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Rayleigh waves in nonpolar Al0.7Sc0.3N(11 2 ¯0) films with enhanced electromechanical coupling and quality factor von Feil, N. M., Nair, A., Pashchenko, V., Kirste, L., Ambacher, O.

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Diffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and AlxGa1−xN von Köhler, K., Gutt, R., Wiegert, J., Kirste, L.

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Modeling of polarization reversal-induced interface sheet charge in wurtzite-type AlScN/GaN heterostructures von Yassine, M., Yassine, A., Nair, A., Sundarapandian, B., Afshar, N., Kirste, L., Fichtner, S., Ambacher, O.

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Influence of structural properties on the ferroelectric behavior of hexagonal AlScN von Yassine, M., Nair, A., Fammels, J., Wade, E., Fu, Z., Yassine, A., Kirste, L., Ambacher, O.

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Birefringence and refractive indices of wurtzite GaN in the transparency range von Shokhovets, S., Himmerlich, M., Kirste, L., Leach, J. H., Krischok, S.

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Anisotropic optical constants, birefringence, and dichroism of wurtzite GaN between 0.6 eV and 6 eV von Shokhovets, S., Kirste, L., Leach, J. H., Krischok, S., Himmerlich, M.

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Publisher's Note: “Influence of structural properties on the ferroelectric behavior of hexagonal AlScN” [J. Appl. Phys. 132, 114101 (2022)] von Yassine, M., Nair, A., Fammels, J., Wade, E., Fu, Z., Yassine, A., Kirste, L., Ambacher, O.

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Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices von Hartmann, C, Wollweber, J, Sintonen, S, Dittmar, A, Kirste, L, Kollowa, S, Irmscher, K, Bickermann, M

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Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range von Hahn, L., Fuchs, F., Kirste, L., Driad, R., Rutz, F., Passow, T., Köhler, K., Rehm, R., Ambacher, O.

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Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter von Däubler, J., Passow, T., Aidam, R., Köhler, K., Kirste, L., Kunzer, M., Wagner, J.

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Growth and doping of semipolar GaN grown on patterned sapphire substrates von Scholz, F., Meisch, T., Caliebe, M., Schörner, S., Thonke, K., Kirste, L., Bauer, S., Lazarev, S., Baumbach, T.

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Broadly tunable hetero-cascading quantum cascade lasers: Design, growth, and external cavity operation von Yang, Q.K., Hugger, S., Aidam, R., Driad, R., Schilling, C., Heußen, H., Kirste, L., Ostendorf, R.

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GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE von Lim, T, Aidam, R, Waltereit, P, Henkel, T, Quay, R, Lozar, R, Maier, T, Kirste, L, Ambacher, O

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Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors von Lim, T., Aidam, R., Kirste, L., Waltereit, P., Quay, R., Müller, S., Ambacher, O.

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N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy von Himmerlich, M., Knübel, A., Aidam, R., Kirste, L., Eisenhardt, A., Krischok, S., Pezoldt, J., Schley, P., Sakalauskas, E., Goldhahn, R., Félix, R., Mánuel, J. M., Morales, F. M., Carvalho, D., Ben, T., García, R., Koblmüller, G.

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Dynamics of thermalization in GaInN/GaN quantum wells grown on ammonothermal GaN von Binder, J., Korona, K. P., Wysmołek, A., Kamińska, M., Köhler, K., Kirste, L., Ambacher, O., Zając, M., Dwiliński, R.

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Molecular beam epitaxial growth of metamorphic AlInSb/GaInSb high-electron-mobility-transistor structures on GaAs substrates for low power and high frequency applications von Loesch, R., Aidam, R., Kirste, L., Leuther, A.

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Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures von Waltereit, P., Bronner, W., Musser, M., Raay, F. van, Dammann, M., Cäsar, M., Müller, S., Kirste, L., Köhler, K., Quay, R., Mikulla, M., Ambacher, O.

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Enhanced mechanical performance of AlN nanodiamond micro-resonators von Heidrich, N, Iankov, D, Hees, J, Pletschen, W, Sah, R E, Kirste, L, Zuerbig, V, Nebel, C, Ambacher, O, Lebedev, V

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