Structure and diffusion of excess Si atoms in SiO2 von DECAI YU, HWANG, Gyeong S, KIRICHENKO, Taras A, BANERJEE, Sanjay K

Volltext

First-principles studies of di-arsenic interstitial and its implications for arsenic-interstitial diffusion in crystalline silicon von Kim, Yonghyun, Kirichenko, Taras A., Kong, Ning, Larson, Larry, Banerjee, Sanjay K.

Volltext

Interaction of neutral vacancies and interstitials with the Si(001) surface von KIRICHENKO, Taras A, BANERJEE, Sanjay K, HWANG, Gyeong S

Volltext

Mechanisms of monovacancy annihilation and type-A defect creation on Si(0 0 1)–2 × 1 von Kirichenko, Taras A., Banerjee, Sanjay K., Hwang, Gyeong S.

Volltext

Surface chemistry effects on vacancy and interstitial annihilation on Si(001) von Kirichenko, Taras A., Banerjee, Sanjay K., Hwang, Gyeong S.

Volltext

First-principles studies of small arsenic interstitial complexes in crystalline silicon von Kim, Yonghyun, Kirichenko, Taras A., Kong, Ning, Henkelman, Graeme, Banerjee, Sanjay K.

Volltext

Interstitial-based boron diffusion dynamics in amorphous silicon von Kong, Ning, Kirichenko, Taras A., Hwang, Gyeong S., Banerjee, Sanjay K.

Volltext

Physically based kinetic Monte Carlo modeling of arsenic-interstitial interaction and arsenic uphill diffusion during ultrashallow junction formation von Kong, Ning, Kirichenko, Taras A., Kim, Yonghyun, Foisy, Mark C., Banerjee, Sanjay K.

Volltext

Enhanced and retarded diffusion of arsenic in silicon by point defect engineering von Kong, Ning, Banerjee, Sanjay K., Kirichenko, Taras A., Anderson, Steven G. H., Foisy, Mark C.

Volltext

Origin of vacancy and interstitial stabilization at the amorphous-crystalline Si interface von Harrison, Scott A., Yu, Decai, Edgar, Thomas F., Hwang, Gyeong S., Kirichenko, Taras A., Banerjee, Sanjay K.

Volltext

Boron retarded diffusion in the presence of indium or germanium von Hong-Jyh Li, Kirichenko, T.A., Kohli, P., Banerjee, S.K., Graetz, E., Tichy, R., Zeitzoff, P.

Volltext

Indium out-diffusion from silicon during rapid thermal annealing von Hong-Jyh Li, Bennett, J., Zeitzoff, P., Kirichenko, T.A., Banerjee, S.K., Henke, D.

Volltext

Boron diffusion in silicon in the presence of other species von Li, Hong-Jyh, Kohli, Puneet, Ganguly, Swaroop, Kirichenko, Taras A., Banerjee, Sanjay, Zeitzoff, Peter

Volltext

First-principles studies of di-arsenic interstitial and its implications for arsenic-interstitial diffusion in crystalline silicon von KIM, Yonghyun, KIRICHENKO, Taras A, NING KONG, LARSON, Larry, BANERJEE, Sanjay K

Volltext

Vacancy At Si-SiO2 Interface: Ab-Initio Study von Kirichenko, T.A., Yu, D., Hwang, G.S., Banerjee, S.K.

Volltext

Arsenic defect complexes at SiO 2 / Si interfaces: A density functional theory study von Kong, Ning, Kirichenko, Taras A., Hwang, Gyeong S., Banerjee, Sanjay K.

Volltext

Silicon interstitials at Si/SiO2 interfaces: Density functional calculations von KIRICHENKO, Taras A, DECAI YU, BANERJEE, Sanjay K, HWANG, Gyeong S

Volltext

Structure and diffusion of excess Si atoms in Si O 2 von Yu, Decai, Hwang, Gyeong S., Kirichenko, Taras A., Banerjee, Sanjay K.

Volltext

Silicon interstitials at Si ∕ SiO 2 interfaces: Density functional calculations von Kirichenko, Taras A., Yu, Decai, Banerjee, Sanjay K., Hwang, Gyeong S.

Volltext

Method for making a stressed non-volatile memory device von WINSTEAD BRIAN A, KIRICHENKO TARAS A, LOIKO KONSTANTIN V

Volltext bestellen