Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials von Vurgaftman, I., Belenky, G., Lin, Y., Donetsky, D., Shterengas, L., Kipshidze, G., Sarney, W. L., Svensson, S. P.

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GaSb-based heterostructure with buried vacuum pocket photonic crystal layer von Liu, R, Shterengas, L, Stein, A, Kipshidze, G, Jiang, J, Hosoda, T, Belenky, G

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InAsSb-based heterostructures for infrared light modulation von Donetsky, D., Liu, J., Kipshidze, G., Shterengas, L., Belenky, G., Sarney, W. L., Svensson, S. P.

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Dual wavelength operation of the GaSb-based Y-branch distributed Bragg reflector lasers near 2.1 μ m von Jiang, J, Shterengas, L, Hosoda, T, Stein, A, Belyanin, A, Kipshidze, G, Belenky, G

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Diode lasers emitting near 3.44 μm in continuous-wave regime at 300K von HOSODA, T, KIPSHIDZE, G, SHTERENGAS, L, BELENKY, G

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Lattice parameter engineering for III–V long wave infrared photonics von Belenky, G, Lin, Y, Shterengas, L, Donetsky, D, Kipshidze, G, Suchalkin, S

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Electronic properties of unstrained unrelaxed narrow gap InAsxSb1−x alloys von Suchalkin, S, Ludwig, J, Belenky, G, Laikhtman, B, Kipshidze, G, Lin, Y, Shterengas, L, Smirnov, D, Luryi, S, Sarney, W L, Svensson, S P

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Extremely small bandgaps, engineered by controlled multi-scale ordering in InAsSb von Sarney, W. L., Svensson, S. P., Lin, Y., Donetsky, D., Shterengas, L., Kipshidze, G., Belenky, G.

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Distributed feedback 3.27 mu m diode lasers with continuous-wave output power above 15 mW at room temperature von Liang, R, Hosoda, T, Shterengas, L, Stein, A, Lu, M, Kipshidze, G, Belenky, G

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AlInAsSb for M-LWIR detectors von Sarney, W.L., Svensson, S.P., Wang, D., Donetsky, D., Kipshidze, G., Shterengas, L., Lin, Y., Belenky, G.

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Narrow ridge GaSb-based cascade diode lasers fabricated by methane–hydrogen reactive ion etching von Wang, M, Hosoda, T, Shterengas, L, Kipshidze, G, Hwang, D.J, Belenky, G

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Room temperature operated diffraction limited λ ≃ 3 µm diode lasers with 37 mW of continuous-wave output power von Hosoda, T, Liang, R, Kipshidze, G, Shterengas, L, Belenky, G

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Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition von Kipshidze, G., Yavich, B., Chandolu, A., Yun, J., Kuryatkov, V., Ahmad, I., Aurongzeb, D., Holtz, M., Temkin, H.

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Distributed feedback 3.27 µm diode lasers with continuous-wave output power above 15 mW at room temperature von Liang, R, Hosoda, T, Shterengas, L, Stein, A, Lu, M, Kipshidze, G, Belenky, G

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AlN/AlGaInN superlattice light-emitting diodes at 280 nm von Kipshidze, G., Kuryatkov, V., Zhu, K., Borisov, B., Holtz, M., Nikishin, S., Temkin, H.

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AlGaInN-based ultraviolet light-emitting diodes grown on Si(111) von Kipshidze, G., Kuryatkov, V., Borisov, B., Holtz, M., Nikishin, S., Temkin, H.

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Diode lasers emitting at 3 μm with 300 mW of continuous-wave output power von SHTERENGAS, L, KIPSHIDZE, G, HOSODA, T, CHEN, J, BELENKY, G

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High dimensional addressable LED arrays based on type I GaInAsSb quantum wells with quinternary AlGaInAsSb barriers von Jung, S, Suchalkin, S, Westerfeld, D, Kipshidze, G, Golden, E, Snyder, D, Belenky, G

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In As1–x Sb x heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers von Guseynov, R. R., Tanriverdiyev, V. A., Kipshidze, G., Aliyeva, Ye. N., Aliguliyeva, Kh. V., Abdullayev, N. A., Mamedov, N. T.

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Photo- and electroluminescence in strong electric fields in Sb-containing narrow gap semiconductor materials von Vinnichenko, M Ya, Makhov, I S, Panevin, V Yu, Selivanov, A V, Firsov, D A, Vorobjev, L E, Pikhtin, N A, Bakhvalov, K V, Shterengas, L, Belenky, G, Kipshidze, G

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