Design study of an antiproton trap for the GBAR experiment von Yoo, Kyoung-Hun, Moon, Seok-Ho, Chung, Moses, Won, Dong Hwan, Park, Kwan Hyung, Lee, Byungchan, Kim, Sun Kee, Lim, Eunhoon, Kim, Eun-San, Kim, Bong Ho, van der Werf, Dirk, Kuroda, Naofumi, Pérez, Patrice

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Exceptionally Uniform and Scalable Multilayer MoS2 Phototransistor Array Based on Large-Scale MoS2 Grown by RF Sputtering, Electron Beam Irradiation, and Sulfurization von Park, Heekyeong, Liu, Na, Kim, Bong Ho, Kwon, Soon Hyeong, Baek, Seungho, Kim, Sehwan, Lee, Han-Koo, Yoon, Young Joon, Kim, Sunkook

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Ultra-low-current driven InGaN blue micro light-emitting diodes for electrically efficient and self-heating relaxed microdisplay von Baek, Woo Jin, Park, Juhyuk, Shim, Joonsup, Kim, Bong Ho, Park, Seongchong, Kim, Hyun Soo, Geum, Dae-Myeong, Kim, Sang Hyeon

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Thermal Studies of 3-D Stacked InGaAs HEMTs and Mitigation Strategy of Self-Heating Effect Using Buried Metal Insertion von Jeong, Jaeyong, Kim, Seong Kwang, Suh, Yoon-Je, Shim, Joonsup, Beak, Woo Jin, Choi, Sung Joon, Kim, Joon Pyo, Kim, Bong Ho, Geum, Dae-Myeong, Kim, Jongmin, Kim, Sanghyeon

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Large Polarization of Hf₀.₅Zr₀.₅Oₓ Ferroelectric Film on InGaAs With Electric-Field Cycling and Annealing Temperature Engineering von Suh, Yoon-Je, Jeong, Jaeyong, Kim, Bong Ho, Kuk, Song-Hyeon, Kim, Seong Kwang, Kim, Joon Pyo, Kim, Sanghyeon

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An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode von Kuk, Song-Hyeon, Han, Seung-Min, Kim, Bong Ho, Baek, Seung-Hyub, Han, Jae-Hoon, Kim, Sang-Hyeon

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Tailoring bolometric properties of a TiOx/Ti/TiOx tri-layer film for integrated optical gas sensors von Shim, Joonsup, Lim, Jinha, Geum, Dae-Myeong, Kim, Bong Ho, Ahn, Seung-Yeop, Kim, SangHyeon

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Atomic rearrangement of a sputtered MoS2 film from amorphous to a 2D layered structure by electron beam irradiation von Kim, Bong Ho, Gu, Hyun Ho, Yoon, Young Joon

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Influence of Channel Structure on the Subthreshold Swing of InGaAs HEMTs at Cryogenic Temperatures Down to 4 K von Jeong, Jaeyong, Kim, Jongmin, Lee, Jisung, Suh, Yoon-Je, Rheem, Nahyun, Kim, Seong Kwang, Park, Juhyuk, Kim, Bong Ho, Kim, Joon Pyo, Park, Seung-Young, Kim, Sanghyeon

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Examination of Ferroelectric FET for "Cold" Nonvolatile Memory von Kuk, Song-Hyeon, Han, Seung-Min, Kim, Bong Ho, Kim, Joon Pyo, Kim, Seong-Kwang, Ahn, Seung-Yeop, Park, Min Hyuk, Han, Jae-Hoon, Kim, Sang-Hyeon

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Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet p-FETs on Si (100) Bulk n-FETs von Kim, Seong Kwang, Lim, Hyeong-Rak, Jeong, Jaejoong, Lee, Seung Woo, Jeong, Ho Jin, Park, Juhyuk, Kim, Joon Pyo, Jeong, Jaeyong, Kim, Bong Ho, Ahn, Seung-Yeop, Park, Youngkeun, Geum, Dae-Myoung, Kim, Younghyun, Baek, Yongku, Cho, Byung Jin, Kim, Sanghyeon

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Effect of Scandium Insertion Into the Gate-Stack of Ferroelectric Field-Effect Transistors von Kim, Bong Ho, Kuk, Song-Hyeon, Kim, Seong Kwang, Kim, Joon Pyo, Suh, Yoon-Je, Jeong, Jaeyong, Geum, Dae-Myeong, Baek, Seung-Hyub, Kim, Sang Hyeon

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Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization von Kuk, Song-Hyeon, Han, Seungmin, Lee, Dong Hyun, Kim, Bong Ho, Shim, Joonsup, Park, Min Hyuk, Han, Jae-Hoon, Kim, Sang-Hyeon

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Photoresponsive behavior of electron-beam irradiated MoS2 films von Gu, Hyun Ho, Kim, Bong Ho, Yoon, Young Joon

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Highly-efficient (>70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors von Geum, Dae-Myeong, Lim, Jinha, Jang, Junho, Ahn, Seungyeop, Kim, SeongKwang, Shim, Joonsup, Kim, Bong Ho, Park, Juhyuk, Baek, Woo Jin, Jeong, Jaeyong, Kim, SangHyeon

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Contact and Interface Engineering of MoS2-Based Photodetectors Using Electron-Beam Irradiation von Kim, Bong Ho, Kim, Dong Wook, Kwon, Soon Hyeong, Yoon, Hongji, Yoon, Young Joon

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Sputtering and Electron Beam Irradiation of WS2/MoS2 and MoS2/WS2 Heterostructures for Enhanced Photoresponsivity von Kim, Bong Ho, Kwon, Soon Hyeong, Yoon, Hongji, Kim, Dong Wook, Yoon, Young Joon

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Growth Behavior of SiO2 Films on Polyimide Substrates after Ion-Beam Treatment von Han, Jin Hee, Kim, Bong Ho, Kwon, Soon Hyeong, Yoon, Young Joon

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Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement von Kim, Bong Ho, Kuk, Song‐Hyeon, Kim, Seong Kwang, Kim, Joon Pyo, Suh, Yoon‐Je, Jeong, Jaeyong, Geum, Dae‐Myeong, Baek, Seung‐Hyub, Kim, Sang Hyeon

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Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics von Kim, Bong Ho, Kuk, Song‐Hyeon, Kim, Seong Kwang, Kim, Joon Pyo, Suh, Yoon‐Je, Jeong, Jaeyong, Lee, Chan Jik, Geum, Dae‐Myeong, Yoon, Young Joon, Kim, Sang Hyeon

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