Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances von Kim, Si Joon, Mohan, Jaidah, Summerfelt, Scott R., Kim, Jiyoung

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Review of solution-processed oxide thin-film transistors von Kim, Si Joon, Yoon, Seokhyun, Kim, Hyun Jae

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Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget von Kim, Si Joon, Narayan, Dushyant, Lee, Jae-Gil, Mohan, Jaidah, Lee, Joy S., Lee, Jaebeom, Kim, Harrison S., Byun, Young-Chul, Lucero, Antonio T., Young, Chadwin D., Summerfelt, Scott R., San, Tamer, Colombo, Luigi, Kim, Jiyoung

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Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films von Kim, Si Joon, Mohan, Jaidah, Lee, Jaebeom, Lee, Joy S., Lucero, Antonio T., Young, Chadwin D., Colombo, Luigi, Summerfelt, Scott R., San, Tamer, Kim, Jiyoung

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Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors von Kim, Si Joon, Mohan, Jaidah, Kim, Harrison Sejoon, Lee, Jaebeom, Young, Chadwin D., Colombo, Luigi, Summerfelt, Scott R., San, Tamer, Kim, Jiyoung

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Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing von Kim, Si Joon, Jung, Yong Chan, Mohan, Jaidah, Kim, Hyo Jeong, Rho, Sung Min, Kim, Min Seong, Yoo, Jeong Gyu, Park, Hye Ryeon, Hernandez-Arriaga, Heber, Kim, Jin-Hyun, Kim, Hyung Tae, Choi, Dong Hyun, Jung, Joohye, Hwang, Su Min, Sejoon Kim, Harrison, Kim, Hyun Jae, Kim, Jiyoung

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Solution-processed indium oxide electron transporting layers for high-performance and photo-stable perovskite and organic solar cells von Yoon, Seokhyun, Kim, Si Joon, Kim, Harrison S, Park, Joon-Suh, Han, Il Ki, Jung, Jae Woong, Park, Minwoo

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Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications von Kim, Hyo Jeong, An, Yonghwan, Jung, Yong Chan, Mohan, Jaidah, Yoo, Jeong Gyu, Kim, Young In, Hernandez-Arriaga, Heber, Kim, Harrison Sejoon, Kim, Jiyoung, Kim, Si Joon

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Activation of sputter-processed indium–gallium–zinc oxide films by simultaneous ultraviolet and thermal treatments von Tak, Young Jun, Du Ahn, Byung, Park, Sung Pyo, Kim, Si Joon, Song, Ae Ran, Chung, Kwun-Bum, Kim, Hyun Jae

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A solution-processed quaternary oxide system obtained at low-temperature using a vertical diffusion technique von Yoon, Seokhyun, Kim, Si Joon, Tak, Young Jun, Kim, Hyun Jae

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A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films von Kim, Si Joon, Mohan, Jaidah, Kim, Harrison Sejoon, Hwang, Su Min, Kim, Namhun, Jung, Yong Chan, Sahota, Akshay, Kim, Kihyun, Yu, Hyun-Yong, Cha, Pil-Ryung, Young, Chadwin D., Choi, Rino, Ahn, Jinho, Kim, Jiyoung

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Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition von Wan, Lingyu, Yang, Qingyi, Feng, Zhe Chuan, Chan, Ting-Shan, Talwar, Devki N., Lin, Hao-Hsiung, Sun, Wenhong, He, Kaiyan, Luo, Xuguang, Liang, Yuanlan, Qian, Yingda, Ferguson, Ian

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Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors von Kim, Si Joon, Mohan, Jaidah, Kim, Harrison Sejoon, Lee, Jaebeom, Hwang, Su Min, Narayan, Dushyant, Lee, Jae-Gil, Young, Chadwin D., Colombo, Luigi, Goodman, Gary, Wan, Alan S., Cha, Pil-Ryung, Summerfelt, Scott R., San, Tamer, Kim, Jiyoung

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All-sputtered oxide thin-film transistors fabricated at 150 °C using simultaneous ultraviolet and thermal treatment von Tak, Young Jun, Kim, Si Joon, Kwon, Sera, Kim, Hee jun, Chung, Kwun-Bum, Kim, Hyun Jae

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Low-Cost Label-Free Electrical Detection of Artificial DNA Nanostructures Using Solution-Processed Oxide Thin-Film Transistors von Kim, Si Joon, Jung, Joohye, Lee, Keun Woo, Yoon, Doo Hyun, Jung, Tae Soo, Dugasani, Sreekantha Reddy, Park, Sung Ha, Kim, Hyun Jae

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Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source von Jung, Yong Chan, Hwang, Su Min, Le, Dan N., Kondusamy, Aswin L. N., Mohan, Jaidah, Kim, Sang Woo, Kim, Jin Hyun, Lucero, Antonio T., Ravichandran, Arul, Kim, Harrison Sejoon, Kim, Si Joon, Choi, Rino, Ahn, Jinho, Alvarez, Daniel, Spiegelman, Jeff, Kim, Jiyoung

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High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor von Kim, Harrison Sejoon, Hwang, Su Min, Meng, Xin, Byun, Young-Chul, Jung, Yong Chan, Ravichandran, Arul Vigneswar, Sahota, Akshay, Kim, Si Joon, Ahn, Jinho, Lee, Lance, Zhou, Xiaobing, Hwang, Byung Keun, Kim, Jiyoung

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A Novel Combinatorial Approach to the Ferroelectric Properties in HfxZr1−xO2 Deposited by Atomic Layer Deposition von Jung, Yong Chan, Mohan, Jaidah, Hwang, Su Min, Kim, Jin-Hyun, Le, Dan N., Sahota, Akshay, Kim, Namhoon, Hernandez-Arriaga, Heber, Veyan, Jean-Francois, Kim, Harrison Sejoon, Kim, Si Joon, Choi, Rino, Kim, Jiyoung

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Label-Free Flexible DNA Biosensing System Using Low-Temperature Solution-Processed In-Zn-O Thin-Film Transistors von Joohye Jung, Si Joon Kim, Tae Soo Jung, Jaewon Na, Doo Hyun Yoon, Sabri, Mardhiah Muhamad, Hyun Jae Kim

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Artificial DNA nanostructure detection using solution-processed In-Ga-Zn-O thin-film transistors von Kim, Si Joon, Kim, Byeonghoon, Jung, Joohye, Yoon, Doo Hyun, Lee, Junwye, Park, Sung Ha, Kim, Hyun Jae

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