Enhancement in external quantum efficiency of AlGaInP red μ-LED using chemical solution treatment process von Jung, Byung Oh, Lee, Wonyong, Kim, Jeomoh, Choi, Myungshin, Shin, Hui-Youn, Joo, Minho, Jung, Sukkoo, Choi, Yoon-Ho, Kim, Moon J.

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p-i-p-i-n Separate Absorption and Multiplication Ultraviolet Avalanche Photodiodes von Mi-Hee Ji, Jeomoh Kim, Detchprohm, Theeradetch, Yuanzheng Zhu, Shyh-Chiang Shen, Dupuis, Russell D.

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AlxGa1−xN Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than 10 von Jeomoh Kim, Mi-Hee Ji, Detchprohm, Theeradetch, Jae-Hyun Ryou, Dupuis, Russell D., Sood, Ashok K., Dhar, Nibir K.

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High-Responsivity GaN/InGaN Heterojunction Phototransistors von Tsung-Ting Kao, Jeomoh Kim, Detchprohm, Theeradetch, Dupuis, Russell D., Shyh-Chiang Shen

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Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers von Choi, Suk, Ji, Mi-Hee, Kim, Jeomoh, Jin Kim, Hee, Satter, Md. M., Yoder, P. D., Ryou, Jae-Hyun, Dupuis, Russell D., Fischer, Alec M., Ponce, Fernando A.

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Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays von Mi-Hee Ji, Jeomoh Kim, Detchprohm, Theeradetch, Dupuis, Russell D., Sood, Ashok K., Dhar, Nibir K., Lewis, Jay

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Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions von Kim, Jeomoh, Lochner, Zachary, Ji, Mi-Hee, Choi, Suk, Kim, Hee Jin, Kim, Jin Soo, Dupuis, Russell D., Fischer, Alec M., Juday, Reid, Huang, Yu, Li, Ti, Huang, Jingyi Y., Ponce, Fernando A., Ryou, Jae-Hyun

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Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating von Choi, Suk, Jin Kim, Hee, Lochner, Zachary, Kim, Jeomoh, Dupuis, Russell D., Fischer, Alec M., Juday, Reid, Huang, Yu, Li, Ti, Huang, Jingyi Y., Ponce, Fernando A., Ryou, Jae-Hyun

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Numerical Simulation for Operation of Flexible Thin-Film Transistors With Bending von Asadirad, Mojtaba, Pouladi, Sara, Shervin, Shahab, Seung Kyu Oh, Keon Hwa Lee, Jeomoh Kim, Sung-Nam Lee, Ying Gao, Dutta, Pavel, Selvamanickam, Venkat, Jae-Hyun Ryou

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Temperature-Dependent Characteristics of GaN Homojunction Rectifiers von Tsung-Ting Kao, Jeomoh Kim, Yi-Che Lee, Haq, Abul Fazal Muhammad Saniul, Mi-Hee Ji, Detchprohm, Theeradetch, Dupuis, Russell D., Shyh-Chiang Shen

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Comparison of AlGaN p-i-n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates von Kim, Jeomoh, Ji, Mi-Hee, Detchprohm, Theeradetch, Dupuis, Russell D., Ryou, Jae-Hyun, Sood, Ashok K., Dhar, Nibir D., Lewis, Jay

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Effect of Group-III precursors on unintentional gallium incorporation during epitaxial growth of InAlN layers by metalorganic chemical vapor deposition von Kim, Jeomoh, Ji, Mi-Hee, Detchprohm, Theeradetch, Dupuis, Russell D., Fischer, Alec M., Ponce, Fernando A., Ryou, Jae-Hyun

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Radiative recombination in GaN/InGaN heterojunction bipolar transistors von Kao, Tsung-Ting, Lee, Yi-Che, Kim, Hee-Jin, Ryou, Jae-Hyun, Kim, Jeomoh, Detchprohm, Theeradetch, Dupuis, Russell D., Shen, Shyh-Chiang

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Improved Hole Transport by \hbox Layer in Multiple Quantum Wells of Visible LEDs von Jeomoh Kim, Mi-Hee Ji, Lochner, Zachary, Suk Choi, Sebkhi, Nordine, Jianping Liu, Satter, Md M., Jin Soo Kim, Yoder, P. Douglas, Dupuis, Russell D., Juday, Reid, Fischer, Alec M., Ponce, Fernando A., Jae-Hyun Ryou

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III-N High-Power Bipolar Transistors von Dupuis, Russell D, Kim, Jeomoh, Lee, Yi-Che, Lochner, Zachary, Ji, Mi-Hee, Kao, Tsung-Ting, Ryou, Jae-Hyun, Detchphrom, Theeradetch, Shen, Shyh-Chiang

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Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer von Choi, Suk, Kim, Hee Jin, Kim, Seong-Soo, Liu, Jianping, Kim, Jeomoh, Ryou, Jae-Hyun, Dupuis, Russell D., Fischer, Alec M., Ponce, Fernando A.

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Rethinking phonons: The issue of disorder von Seyf, Hamid Reza, Yates, Luke, Bougher, Thomas L., Graham, Samuel, Cola, Baratunde A., Detchprohm, Theeradetch, Ji, Mi-Hee, Kim, Jeomoh, Dupuis, Russell, Lv, Wei, Henry, Asegun

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Flexible deep-ultraviolet light-emitting diodes for significant improvement of quantum efficiencies by external bending von Shervin, Shahab, Oh, Seung Kyu, Park, Hyun Jung, Lee, Keon-Hwa, Asadirad, Mojtaba, Kim, Seung-Hwan, Kim, Jeomoh, Pouladi, Sara, Lee, Sung-Nam, Li, Xiaohang, Kwak, Joon Seop, Ryou, Jae-Hyun

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Al x Ga1- x N Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than [Formula Omitted] von Kim, Jeomoh, Ji, Mi-Hee, Detchprohm, Theeradetch, Ryou, Jae-Hyun, Dupuis, Russell D, Sood, Ashok K, Dhar, Nibir K

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Al x Ga 1− x N Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than $10^{5} von Kim, Jeomoh, Ji, Mi-Hee, Detchprohm, Theeradetch, Ryou, Jae-Hyun, Dupuis, Russell D., Sood, Ashok K., Dhar, Nibir K.

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